Patents by Inventor Mamoru Tashiro

Mamoru Tashiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050196549
    Abstract: A new chemical vapor reaction system is described. Instead of ECR where electrons can move as independent particles without interaction, a mixed cyclotron resonance is a main exciting principal for chemical vapor reaction. In the new proposed resonance, the resonating space is comparatively large so that a material having a high melting point such as diamond can be deposited in the form of a thin film by this inovative method.
    Type: Application
    Filed: April 11, 2005
    Publication date: September 8, 2005
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takashi Inujima, Naoki Hirose, Mamoru Tashiro, Shunpei Yamazaki
  • Patent number: 6677001
    Abstract: A new chemical vapor reaction system is described. Instead of ECR where electrons can move as independent particles without interaction, a mixed cyclotron resonance is a main exciting principal for chemical vapor reaction. In the new proposed resonance, the resonating space is comparatively large so that a material having a high melting point such as diamond can be deposited in the form of a thin film by this inovative method.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: January 13, 2004
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takashi Inujima, Naoki Hirose, Mamoru Tashiro, Shunpei Yamazaki
  • Patent number: 5466566
    Abstract: A silver halide color photographic material comprises at least one red-sensitive layer, at least one green-sensitive layer and at least one blue-sensitive layer on a support, in which (1) the blue-sensitive layer contains a magenta colored or cyan colored yellow coupler and contains an emulsion of tabular grains having a mean aspect ratio of 3.0 or more, (2) the green-sensitive layer contains a cyan colored magenta coupler and contains an emulsion of tabular grains having a mean aspect ratio of 3.0 or more, or (3) the blue-sensitive layer and/or the green-sensitive layer contain(s) a magenta colored or cyan colored colorless coupler and contain(s) an emulsion of tabular grains having a mean aspect ratio of 3.0 or more. The material has excellent color reproducibility and gives a color image having good sharpness and storage stability.
    Type: Grant
    Filed: July 23, 1993
    Date of Patent: November 14, 1995
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Mamoru Tashiro, Seiji Ichijima
  • Patent number: 5370982
    Abstract: A silver halide color photographic light-sensitive material includes at least one light-sensitive silver halide emulsion layer and an outermost protective layer on a support. The protective layer contains an acid polymer having a carboxyl, phosphoric acid and/or sulfonic group, and a matting agent formed of particles of a copolymer of methyl methacrylate, ethyl acrylate and methacrylic acid having a specified molar ratio of the repeating units. Also, at least one protective layer contains an ultraviolet absorbent.
    Type: Grant
    Filed: October 19, 1993
    Date of Patent: December 6, 1994
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Mamoru Tashiro, Hirokazu Kondo
  • Patent number: 5118597
    Abstract: A silver halide color photographic material comprising a support having thereon at least one light-sensitive silver halide emulsion layer, wherein the light-sensitive silver halide emulsion layer contains at least one monodispersed emulsion having a particle size distribution such that a coefficient of variation with respect to a particle diameter of silver halide grains, S/r (wherein S represents a standard deviation regarding to a particle diameter and r represents an average particle diameter) is not more than about 0.25, and the silver halide color photographic material contains at least one primary compound capable of releasing, upon a reaction with an oxidation product of a developing agent, a secondary compound which is capable of further releasing a development inhibitor upon a reaction with another molecule of an oxidation product of a developing agent.The silver halide color photographic material is excellent in sharpnes, graininess and color reproducibility and has a broad exposure latitude.
    Type: Grant
    Filed: November 7, 1990
    Date of Patent: June 2, 1992
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Keiji Mihayashi, Mamoru Tashiro, Kohzaburoh Yamada
  • Patent number: 5036794
    Abstract: A CVD apparatus in which a reaction chamber includes a pair of electrodes which define a plasma generating space therebetween. A metallic enclosure surrounds the plasma generating space thereby preventing plasma which has been produced within the space from escaping. The enclosure can be utilized to support one or more substrates to be coated.
    Type: Grant
    Filed: March 23, 1990
    Date of Patent: August 6, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Mamoru Tashiro, Minoru Miyazaki, Mitsunori Sakama, Takeshi Fukada
  • Patent number: 4987008
    Abstract: Film formation without damage on the surface of semiconductor can be established by generating active halogen or active hydrogen by a photochemical reaction, cleaning on the surface of the semiconductor by removing oxide formed thereon by means of the active elements, and continuously thereafter fabricating the film by a photochemical reaction in the same device.
    Type: Grant
    Filed: May 24, 1989
    Date of Patent: January 22, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kazuo Urata, Mamoru Tashiro, Yuji Tanamura, Shinji Imato
  • Patent number: 4949004
    Abstract: A mercury-vapor lamp is provided with a reservoir in which a superfluous amount of mercury is stored in the form of liquid state. The liquid mercury in the reservoir is cooled to a certain temperature. The pressure of mercury-vapor is automatically reduced to the saturated pressure of the liquid mercury cooled. In this configuration, the pressure of mercury-vapor is controlled by adjusting the temperature of the liquid mercury stored in the reservoir.
    Type: Grant
    Filed: February 8, 1989
    Date of Patent: August 14, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takashi Inujima, Kazuo Urata, Mamoru Tashiro, Yuji Tanamura, Shinji Imato, Kenji Itoh, Seiichi Odaka, Shigenori Hayashi, Naoki Hirose
  • Patent number: 4936251
    Abstract: A vapor phase reaction apparatus includes a reaction chamber defined by first and second walls fixed opposite each other. Third and fourth walls are introduced into the reaction chamber already having affixed to them a substrate for deposition. A reactive gas is introduced into the reaction chamber for chemical vapor deposition onto the substrate.
    Type: Grant
    Filed: April 22, 1985
    Date of Patent: June 26, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Mamoru Tashiro, Minoru Miyazaki, Mitsunori Sakama, Takeshi Fukada
  • Patent number: 4910044
    Abstract: Ultraviolet light is emitted mainly with 185 nm in wave length so that a thick silicon layer is fabricated by decomposition of silane gas at a high deposition speed. As a light source, a bulb is filled with an amount of mercury gas without dosing argon gas which enhances preferentially light with 254 nm in wave length.
    Type: Grant
    Filed: September 1, 1988
    Date of Patent: March 20, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kazuo Urata, Mamoru Tashiro, Yuji Tanamura, Shinji Imato, Takashi Inujima, Shigenori Hayashi
  • Patent number: 4857139
    Abstract: A photo CVD apparatus includes a reaction chamber, a vacuum pump, and a light source chamber disposed in the reaction chamber, the light source chamber having a light window. A light source is provided in the light source chamber for irradiating the inside of the reaction chamber through the window. A device inputs reactive gas into the reaction chamber, and an electrode is disposed in the reaction space adjacent to the window and located between the substrate and the window. A method of depositing a layer on a substrate includes the steps of disposing a substrate in a reaction chamber, introducing a reactive gas, and initiating a photo-chemical reaction to deposit the product of the reaction on the substrate by irradiating the reactive gas with light emitted from a light source through a window of a light source chamber in which the light source is disposed. The substrate is then removed from the reaction chamber, and an etchant gas is introduced into the reaction chamber.
    Type: Grant
    Filed: January 4, 1988
    Date of Patent: August 15, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mamoru Tashiro, Kazuo Urata, Shunpei Yamazaki
  • Patent number: 4811684
    Abstract: A photo CVD apparatus for use with a reactive gas is disclosed, which includes a reaction chamber, a second chamber for a light source, separated from the reaction chamber by a transparent window. There is also a conduit connecting these two chambers and a means for preventing deposition by the reactive gas on the light source chamber walls, such as heating, is provided. Examples of this technique's applicabilities are given with such gases as Si.sub.2 H.sub.6 or Al(CH.sub.3).sub.3 and ammonia.
    Type: Grant
    Filed: September 3, 1987
    Date of Patent: March 14, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mamoru Tashiro, Kazuo Urata, Shunpei Yamazaki
  • Patent number: 4636401
    Abstract: An apparatus for conducting chemical vapor deposition reduced pressure, comprising: means for feeding reactive gases; a reaction vessel for depositing a film layer from the reactive gases by application of thermal energy, light energy or electric energy singly or in combination; an exhaust means for exhausting unnecessary reactive gases and unnecessary reaction products from the reaction vessel and for vacuumizing or reducing pressure of the reaction vessel, including a turbo molecular pump and a pressure control valve interposed between the reaction vessel and a roughing rotary pump; and a method of chemical vapor deposition using such apparatus.
    Type: Grant
    Filed: February 14, 1985
    Date of Patent: January 13, 1987
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Mamoru Tashiro, Minoru Miyazaki
  • Patent number: 4444873
    Abstract: A process for processing a silver halide color photographic material is disclosed. The process particularly relates to bleaching and fixing of a color developed silver halide color photographic material. The color developed material is processed with an acid bleaching solution containing a ferric salt, inorganic salt and a halide. Immediately after the bleaching step, the photographic material is processed with the fixing solution containing 5 g/l to 50 g/l of polycarboxylic acids. By utilizing the bleaching and fixing steps disclosed it is possible to process a silver halide color photographic material rapidly utilizing a reduced number of baths, obtain an excellent bleaching rate and produce an image having excellent stability.
    Type: Grant
    Filed: December 29, 1982
    Date of Patent: April 24, 1984
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Takatoshi Ishikawa, Kiyoshi Imai, Mamoru Tashiro, Junya Nakajima
  • Patent number: 4316753
    Abstract: A method for producing a low alloy hot rolled steel strip or sheet comprising hot rolling a steel slab at a finishing temperature not higher than the Ar.sub.3 transformation temperature plus 60.degree. C. and cooling and coiling the hot rolled strip at a temperature not higher than 500.degree. C. The steel slab contains not more than 0.20% carbon, 0.50 to 2.50% manganese and 0.05 to 1.0% chromium and optionally contains not more than 1.0% silicon, the balance being iron and unavoidable impurities. The resultant strip or sheet has a high tensile strength of not less than 40 kg/mm.sup.2, a low yeild ratio of not more than 70% and an excellent total elongation of not less than 25%.
    Type: Grant
    Filed: March 21, 1979
    Date of Patent: February 23, 1982
    Assignee: Nippon Steel Corporation
    Inventors: Kunishige Kaneko, Mamoru Tashiro, Nagayasu Takemoto, Itaru Imabayashi, Takashi Furukawa
  • Patent number: 4313808
    Abstract: A method of regenerating a waste photographic processing solution (e.g.
    Type: Grant
    Filed: June 16, 1980
    Date of Patent: February 2, 1982
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Noboru Idemoto, Minoru Yamada, Mamoru Tashiro, Sachio Matsushita