Abstract: An embodiment multi-way coolant valve includes an outer housing including first to third outer inlets, first to third outer outlets, and a pump mount portion coupled to one of the outer outlets, an inner housing rotatably provided within the outer housing and including penetration holes corresponding to the outer inlets and outlets, a coolant line defined by a selective connection of the penetration holes such that the outer inlets and outlets are selectively connected, pads interposed between an interior circumference of the outer housing and an exterior circumference of the inner housing at locations of the outer inlets and outlets, respectively, and a driving device connected to a rotation center of the inner housing to selectively rotate the inner housing within the outer housing, wherein the inner housing is configured to rotate by a preset interval according to a selected vehicle mode.

Abstract: A method for forming a ternary thin film using an atomic layer deposition process includes supplying a first and a second reactive material to a chamber containing a wafer, the first and second reactive materials being adsorbing on a surface of the wafer, supplying a first gas to the chamber to purge the first and second reactive materials that remain unreacted, supplying a third reactive material to the chamber to cause a reaction between the first and second reactive materials and the third reactive material to form a thin film monolayer, supplying a second gas to purge the third reactive material that remains unreacted and a byproduct, and repeating the above steps for forming the thin film monolayer a predetermined number of times to form a ternary thin film having a predetermined thickness on the wafer. Preferably, the ternary thin film is a SiBN film.

Abstract: A method for forming a ternary thin film using an atomic layer deposition process includes supplying a first and a second reactive material to a chamber containing a wafer, the first and second reactive materials being adsorbing on a surface of the wafer, supplying a first gas to the chamber to purge the first and second reactive materials that remain unreacted, supplying a third reactive material to the chamber to cause a reaction between the first and second reactive materials and the third reactive material to form a thin film monolayer, supplying a second gas to purge the third reactive material that remains unreacted and a byproduct, and repeating the above steps for forming the thin film monolayer a predetermined number of times to form a ternary thin film having a predetermined thickness on the wafer. Preferably, the ternary thin film is a SiBN film.