Abstract: A service discovery protocol server for discovering a service provided by an apparatus using a service discovery protocol, from another apparatus using a service discovery protocol different from the service discovery protocol has a common database for storing service information on a plurality of service discovery protocols, written in a common format, and a handler unit for handling one of the plurality of service discovery protocols. The handler unit includes a conversion unit for mutually converting service information between a format used in the one service discovery protocol handled in this handler unit and the common format.

Abstract: The ceramic porous membrane comprises ceramic particles and ceramic sol particles (with the exception of TiO2 sol particles). The ceramic particles and the ceramic sol particles are kneaded to obtain a kneaded product or a slurry, and the kneaded product or the slurry are sintered at a lower temperature. The ceramic sol particles have an average particle diameter of ⅕ or less of an average particle diameter of the ceramic particles, and the ceramic sol has a solid content of 1 to 30% by weight based on the weight of solid content of the ceramic particles.

Abstract: A ceramic porous membrane in which aggregate particles are bound by binding portions composed of a titania, is provided. The binding portions composed of a titania are contained in an amount of 1-30% by weight based on the aggregate particles, and the aggregate particles comprise an .alpha.-alumina. The porous membrane is formed on a porous substrate to form a ceramic filter. A slurry comprising aggregate particles and 1-70% by weight of binding portions composed of a titania based on the aggregate particles are prepared, and thermally treating the slurry at a temperature of 300-700.degree. C. under ambient atmosphere to form the porous membrane.

Abstract: There is a system for producing high-purity hydrogen by reforming a hydrocarbon and/or an oxygen atom-containing hydrocarbon to form a reformed gas containing hydrogen and separating the hydrogen from said gas. The system includes a hydrocarbon source, a water source, an oxygen source, a vaporization chamber connecting with the hydrocarbon source, the water source and the oxygen source, and a reforming chamber provided with a catalyst for steam reforming and partial oxidation and a hydrogen-separating membrane. The reforming chamber is thermally connected with the vaporization chamber. A process for producing high-purity hydrogen includes heating a reforming chamber provided with a hydrogen-separating membrane, feeding, into the reforming chamber, hydrocarbon, steam and oxygen or air to give rise to steam reforming and partial oxidation therein to produce a reaction gas, and passing the reaction gas through the hydrogen-separating membrane to recover high-purity hydrogen.

Abstract: There is a system for producing high-purity hydrogen by reforming a hydrocarbon and/or an oxygen atom-containing hydrocarbon to form a reformed gas containing hydrogen and separating the hydrogen from said gas. The system includes a hydrocarbon source, a water source, an oxygen source, a vaporization chamber connecting with the hydrocarbon source, the water source and the oxygen source, and a reforming chamber provided with a catalyst for steam reforming and partial oxidation and a hydrogen-separating membrane. The reforming chamber is thermally connected with the vaporization chamber. A process for producing high-purity hydrogen includes heating a reforming chamber provided with a hydrogen-separating membrane, feeding, into the reforming chamber, hydrocarbon, steam and oxygen or air to give rise to steam reforming and partial oxidation therein to produce a reaction gas, and passing the reaction gas through the hydrogen-separating membrane to recover high-purity hydrogen.

Abstract: A method for removing CO from a reformed gas includes the steps of treating the reformed gas by a hydrogen purifier to decrease a ratio of the concentration of components other than hydrogen to the concentration of hydrogen so that the ratio may be lower than in the reformed gas, and then converting CO contained in the gas treated by the hydrogen purifier into a gas other than CO. CO can be removed from the reformed gas, and simultaneously high-purity hydrogen can also be obtained, which leads to the increase of a fuel efficiency and the inhibition effect of performance deterioration.

Abstract: A composite ceramic material that is stable and shows a high strength in the temperature range of room temperature to 1600.degree. C. as well as has a toughness high-enough to be used as structural material and a process for producing it are provided. This composite ceramic material is composed of a matrix substantially made up of Si.sub.3 N.sub.4 and Si.sub.2 N.sub.2 O and a dispersion phase substantially made up of SiC where the matrix contains 0.05% by weight or less of metal element impurities such as Al, Ca and Fe. SiC grains or fibers are dispersed in the dense matrix made up of Si.sub.3 N.sub.4 and Si.sub.2 N.sub.2 O fine grains, which are substantially free from element impurities except Si, C and O. According to one aspect of this invention, this ceramic material is produced by Si.sub.3 N.sub.4 with SiO.sub.2 to form matrix powders that contain 0.

Abstract: A ceramic package for containing a semiconductor chip including a heat radiating plate, a base plate for wiring, and a ceramic package for containing a semiconductor chip. The package contains a ceramic board, a ceramic cap and a metal lead frame. The heat radiating plate and the ceramic board are made of silicon nitride sintered body, which is characterized in that the number of grain boundaries per a 10 .mu.m straight line drawn in an arbitrary section of the sintered (polycrystal) body is 20 or fewer.

Abstract: A silicon nitride sintered body wherein a number of grain boundaries of Si.sub.3 N.sub.4 per a length of 10 .mu.m is not more than 20 when measured along a straight line drawn in an arbitrary section of the silicon nitride sintered body. A process is disclosed for producing such a silicon nitride sintered body, which includes the steps of grinding and mixing a raw material of silicon nitride and not more than 0.3 wt. % of Al when calculated as Al.sub.2 O.sub.3, shaping the mixture, and firing the shaped body. The silicon nitride sintered body involves not only ordinary silicon nitride sintered bodies, but also vapor deposited films of silicon nitride formed by CVD or the like, flame sprayed films of silicon nitride formed by flame spraying, and the like.

Abstract: Silicon nitride sintered bodies are disclosed which contain silicon carbide therein and in which intergranular phases between silicon nitride particles are substantially crystallized. Further, a manufacturing method of the sintered bodies is disclosed, in which a silicon carbide powdery raw material is used as an additive when preparing raw powders and the intergranular phases are crystallized during a temperature descending stage following a firing. Silicone carbide effectivley promotes densification of the structure of the sintered body and crystallization of the intergranular phases, thereby making it possible to provide the sintered bodies having intergranular phases with little glass phases uncrystallized and excellent high-temperature strengths.

Abstract: Silicon nitride sintered bodies are disclosed which contain silicon carbide therein and in which intergranular phases between silicon nitride particles are substantially crystallized. Further, a manufacturing method of the sintered bodies is disclosed, in which a silicon carbide powdery raw material is used as an additive when preparing raw powders and the intergranular phases are crystallized during a temperature descending stage following a firing. Silicon carbide effectively promotes densification of the structure of the sintered body and crystallization of the intergranular phases, thereby making it possible to provide the sintered bodies having intergranular phases with little glass phases uncrystallized and excellent high-temperature strengths.

Abstract: A silicon nitride sintered body having a high strength at high temperatures as well as at room temperature can be provided by the method of the present invention, which includes preparing a raw material consisting of SI.sub.3 N.sub.4 powder, a rare earth element oxide powder, and SiC powder, and at least one of a W compound powder and a Mo compound powder, forming the raw material into a shaped body, and then firing the shaped body in N.sub.2 atmosphere to substantially crystallize the grain boundary phase of the Si.sub.3 N.sub.4 grains. The silicon nitride sintered body includes Si.sub.3 N.sub.4 as a main component, and the remainder of a rare earth element compound, SiC and at least one of a W compound and a Mo compound, the grain boundary phase of Sio.sub.3 N.sub.4 grains consisting substantially of crystal phases. The silicon nitride sintered body is dense and thin in color so that uneven coloring thereof can be decreased.

Abstract: A silicon nitride sintered body having a high strength at high temperatures as well as at room temperature can be provided by the method of the present invention, which includes preparing a raw material consisting of Si.sub.3 N.sub.4 powder, a rare earth element oxide powder, and SiC powder, and at least one of a W compound powder and a Mo compound powder, forming the raw material into a shaped body, and then firing the shaped body in N.sub.2 atomsphere to substantially crystallize the grain boundary phase of the Si.sub.3 N.sub.4 grains. The silicon nitride sintered body includes Si.sub.3 N.sub.4 as a main component, and the remainder of a rare earth element compound, SiC and at least one of a W compound and a Mo compound, the grain boundary phase of Si.sub.3 N.sub.4 grains consisting substantially of crystal phases. The silicon nitride sintered body is dense and thin in color so that uneven coloring thereof can be decreased.