Patents by Inventor Mandar Pandit
Mandar Pandit has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10566206Abstract: Processing methods may be performed to remove unwanted materials from a substrate, such as a native oxide material. The methods may include forming an inert plasma within a processing region of a processing chamber. Effluents of the inert plasma may be utilized to modify a surface of an exposed material on a semiconductor substrate within the processing region of the semiconductor chamber. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.Type: GrantFiled: December 27, 2016Date of Patent: February 18, 2020Assignee: Applied Materials, Inc.Inventors: Mandar Pandit, Nitin Ingle
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Publication number: 20180182633Abstract: Processing methods may be performed to remove unwanted materials from a substrate, such as a native oxide material. The methods may include forming an inert plasma within a processing region of a processing chamber. Effluents of the inert plasma may be utilized to modify a surface of an exposed material on a semiconductor substrate within the processing region of the semiconductor chamber. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.Type: ApplicationFiled: December 27, 2016Publication date: June 28, 2018Applicant: Applied Materials, Inc.Inventors: Mandar Pandit, Nitin Ingle
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Patent number: 9659769Abstract: A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. UV curing of as-deposited PECVD silicon nitride films, for example, has been shown to produce films with stresses of at least 1.65 E10 dynes/cm2. Other dielectric capping layer film materials show similar results. In transistor implementations, the stress from a source/drain region capping layer composed of such a film is uniaxially transferred to the NMOS channel through the source-drain regions to create tensile strain in the NMOS channel.Type: GrantFiled: October 22, 2004Date of Patent: May 23, 2017Assignee: Novellus Systems, Inc.Inventors: Bhadri Varadarajan, Sean Chang, James S. Sims, Guangquan Lu, David Mordo, Kevin Ilcisin, Mandar Pandit, Michael Carris
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Patent number: 9478434Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a chlorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.Type: GrantFiled: November 17, 2014Date of Patent: October 25, 2016Assignee: Applied Materials, Inc.Inventors: Xikun Wang, Mandar Pandit, Zhenjiang Cui, Mikhail Korolik, Anchuan Wang, Nitin K. Ingle, Jie Liu
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Patent number: 9373522Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask and the non-porous carbon layer are removed with a gas-phase etch using plasma effluents formed in a remote plasma from a chlorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the non-porous carbon layer and the titanium nitride.Type: GrantFiled: January 22, 2015Date of Patent: June 21, 2016Assignee: Applied Mateials, Inc.Inventors: Xikun Wang, Mandar Pandit, Anchuan Wang, Nitin K. Ingle
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Patent number: 9355862Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a fluorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.Type: GrantFiled: November 17, 2014Date of Patent: May 31, 2016Assignee: Applied Materials, Inc.Inventors: Mandar Pandit, Xikun Wang, Zhenjiang Cui, Mikhail Korolik, Anchuan Wang, Nitin K. Ingle
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Publication number: 20160086816Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a chlorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.Type: ApplicationFiled: November 17, 2014Publication date: March 24, 2016Applicant: Applied Materials, Inc.Inventors: Xikun Wang, Mandar Pandit, Zhenjiang Cui, Mikhail Korolik, Anchuan Wang, Nitin K. Ingle, Jie Liu
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Publication number: 20160086815Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a fluorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.Type: ApplicationFiled: November 17, 2014Publication date: March 24, 2016Applicant: Applied Materials, Inc.Inventors: Mandar Pandit, Xikun Wang, Zhenjiang Cui, Mikhail Korolik, Anchuan Wang, Nitin K. Ingle