Abstract: Susceptor assemblies having a susceptor base with a plurality of pockets formed in a surface thereof are described. Each of the pockets has a pocket edge angle in the range of 30 to 75° and a pocket edge radius in the range of 0.40±0.05 mm to 1.20 mm±0.05 mm. The pockets have a raised central region and an outer region that is deeper than the raised central region, relative to the surface of the surface of the susceptor base.

Abstract: Embodiments of the disclosure are directed to methods of depositing a molybdenum film directly on a substrate surface (e.g., a low-K dielectric material) by exposing the substrate surface to a molybdenum-containing precursor and a plasma at a temperature of less than or equal to 400° C. The molybdenum-containing precursor comprises one or more of molybdenum pentachloride (MoCl5), molybdenum dioxide dichloride (MoO2Cl2), molybdenum oxytetrachloride (MoOCl4), molybdenum hexacarbonyl, bis(tert-butylimido)-bis(dimethylamido)molybdenum, or bis(ethylbenzene) molybdenum. The plasma comprises one or more of hydrogen (H2), nitrogen (N2), or a silane (SixHy). In some embodiments, when the molybdenum-containing precursor comprises molybdenum hexafluoride (MoF6), the plasma does not include hydrogen (H2).

Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.

Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between a first support surface and a second support surface.

Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.

Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: Substrate support, substrate support assemblies and process chambers comprising same are described. The substrate support has a thermally conductive body with a top surface, a bottom surface and an outer edge, and a plurality of long edge purge channel outlet opening at the outer edge of the thermally conductive body. The substrate support is configured to support a substrate to be processed on a top surface of the substrate support. The top surface of the thermally conductive body may have a ceramic coating. Each of the plurality of purge channel outlet is in fluid communication with a long edge purge channel. The long edge purge channel is coated with a long edge purge channel coating. A substrate support assembly includes the substrate support and the support post coupled to the substrate support. The processing chamber include a chamber body and the substrate support within the chamber body.

Abstract: Processing chambers comprising a chamber body, a remote plasma source (RPS) outside the chamber body, a first connection line between the remote plasma source and the interior volume of the chamber body through the top wall and a second connection line between the remote plasma source and the interior volume through the sidewall of the chamber body. Methods of cleaning a processing chamber comprising flowing an etchant gas through the RPS into the chamber body, followed by a flow recovery gas through the RPS into the chamber body through both the first connection line and second connection line.

Abstract: Methods of forming metal-containing films for electronic devices (e.g., logic devices and/or memory devices) and methods for reducing equivalent oxide thickness (EOT) penalty in electronic devices are disclosed. The methods comprise exposing a substrate surface to a metal precursor, such as titanium chloride (TiCl4), a reducing agent, such as a cyclic 1,4-diene, and a reactant, ammonia (NH3), either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.

Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.

Abstract: Pedestal heater radiators, pedestal assemblies including the pedestal heater radiators and methods of decreasing deposition non-uniformity are described. The pedestal heater radiator has a first radiator body and a second radiator body with different emissivities. The first radiator body and second radiator body are sized and positioned to decrease the heat loss differential between sides of the pedestal.

Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.

Abstract: Processing methods described herein comprise forming a metal gate film on a narrow feature and a wide feature and depositing a hard mask on the metal gate film. The hard mask forms on the metal gate film at a top, bottom and sidewalls of the wide feature and on a top of the narrow feature to cover the metal gate film. Some processing methods comprise oxidizing the metal gate film on the narrow feature to convert a portion of the metal gate film to a metal oxide film. Some processing methods comprise etching the metal oxide film from the narrow feature to leave a gradient etch profile. Some processing methods comprise filling the narrow feature and the wide feature with a gap fill material comprising one or more of a metal nitride, titanium nitride (TiN) or titanium oxynitride (TiON), the gap fill material substantially free of seams and voids.

Abstract: Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 ? to less than or equal to 50 ?. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfO2 as a high-? metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.

Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.

Abstract: Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 ? to less than or equal to 50 ?. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfO2 as a high-? metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.

Abstract: Apparatus and methods for processing a substrate including an injector unit, comprising a leading reactive gas port extending along a length of the injector unit, a trailing reactive gas port extending along the length of the injector unit, and a merge vacuum port forming a boundary around and enclosing the leading reactive gas port and the trailing reactive gas port.

Abstract: Methods for filling the gap of a semiconductor feature comprising exposure of a substrate surface to a precursor and reactant and an anneal environment to decrease the wet etch rate ratio of the deposited film and fill the gap.

Abstract: Some embodiments of the disclosure relate to methods of modifying a heater pedestal to improve temperature and thickness uniformity. Some embodiments of the disclosure relate to the modified heater pedestals with improved temperature and thickness uniformity. In some embodiments, the height of support mesas in different regions of the pedestal are modified to increase temperature uniformity. In some embodiments, the heater elements are moved above the vacuum channel and purge channel to increase temperature uniformity. In some embodiments, the edge ring is modified to be coplanar with the top of a supported substrate.