Abstract: A method for the deposition of a silicide layer of a high melting metal onto a substrate of silicon or silicon dioxide wherein reaction gases consisting of a decomposable silicon-containing hydrogen compound, or a halogenated silane and a metal halide are pyrolytically decomposed in a reaction zone to form a reaction mixture from which a metal silicide is deposited on the substrate at reduced pressures. During the decomposition of the gases and deposition of the metal silicide, the gas pressure in the reaction zone is maintained between 1.3.times.10.sup.-3 to 5.times.10.sup.-2 mbar. This type of pressure is most conveniently maintained by means of a turbomolecular pump.

Abstract: Disclosed herein is a process for the chemical deposition of a material layer on the inside of cavities of a work piece by conducting a gas stream in a substantially laminar flow along a heated work piece wherein deposition occurs from the gaseous phase, at a pressure of less than 10.sup.4 Pascal (N/m.sup.2).

Abstract: An apparatus useful for the chemical vapor deposition treatment of small parts is provided. The articles to be treated are received upon a frame and the CVD treatment is carried out within a heated receptor, with the deposition material feed line movable for more uniform coating. Immediately subsequent to the CVD treatment, the coating may be hardened by removing the supporting frame from the still hot receptor by attaching the frame to the movable material feed line. The small parts are now able to be rapidly quenched in freely circulating cooling air.