Patents by Inventor Mani Rahnama

Mani Rahnama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forming ferroelectric polymer memories
    Patent number: 7727777
    Abstract: In accordance with some embodiments, a ferroelectric polymer memory may be formed of a plurality of stacked layers. Each layer may be separated from the ensuing layer by a polyimide layer. The polyimide layer may provide reduced layer-to-layer coupling, and may improve planarization after the lower layer fabrication.
    Type: Grant
    Filed: May 31, 2002
    Date of Patent: June 1, 2010
    Inventors: Ebrahim Andideh, Mark Isenberger, Michael Leeson, Mani Rahnama
  • Ferroelectric polymer memory device having pyramidal electrode layer and method of forming same
    Publication number: 20060267055
    Abstract: A ferroelectric polymer memory device and a method of providing an electrode layer of the device. The device comprises: a substrate; a plurality of electrode layers including a first electrode layer disposed on the substrate and a second electrode layer extending at an angle with respect to the first electrode layer in a longitudinal direction thereof; a ferroelectric layer disposed between the first electrode layer and the second electrode layer to form memory cells; a ILD layer disposed on the second electrode layer; wherein at least one of the plurality of electrode layers exhibits a pyramidal profile in a widthwise cross-section thereof.
    Type: Application
    Filed: May 25, 2005
    Publication date: November 30, 2006
    Inventors: Mani Rahnama, Gerald Palmrose, Jeffrey West, Ebrahim Andideh
  • Forming ferroelectric polymer memories
    Publication number: 20060048376
    Abstract: In accordance with some embodiments, a ferroelectric polymer memory may be formed of a plurality of stacked layers. Each layer may be separated from the ensuing layer by a polyimide layer. The polyimide layer may provide reduced layer-to-layer coupling, and may improve planarization after the lower layer fabrication.
    Type: Application
    Filed: October 31, 2005
    Publication date: March 9, 2006
    Inventors: Ebrahim Andideh, Mark Isenberger, Michael Leeson, Mani Rahnama
  • Forming ferroelectric polymer memories
    Publication number: 20030224535
    Abstract: In accordance with some embodiments, a ferroelectric polymer memory may be formed of a plurality of stacked layers. Each layer may be separated from the ensuing layer by a polyimide layer. The polyimide layer may provide reduced layer-to-layer coupling, and may improve planarization after the lower layer fabrication.
    Type: Application
    Filed: May 31, 2002
    Publication date: December 4, 2003
    Inventors: Ebrahim Andideh, Mark Isenberger, Michael Leeson, Mani Rahnama