Patents by Inventor Mani Teja VIJJAPU

Mani Teja VIJJAPU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • InGaZnO (IGZO) based system for gas detection at room temperature
    Patent number: 11867657
    Abstract: A gas sensor includes a gate electrode; a dielectric layer covering one surface of the gate electrode; an indium (In) gallium (Ga) zinc (Zn) oxide (O) (IGZO) thin-film formed over the dielectric layer, and first and second metallic electrodes formed on a surface of the IGZO thin-film to act as source and drain, respectively. The IGZO thin-film has an In concentration of 11%+/?3%, Ga concentration of 11%+/?3%, Zn concentration of 7%+/?3%, and O concentration of 71%+/?3%, with a sum of the concentrations being 100%, and the gas interacts with the IGZO thin-film and changes a current through the IGZO thin-film.
    Type: Grant
    Filed: October 1, 2020
    Date of Patent: January 9, 2024
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Mani Teja Vijjapu, Sandeep G. Surya, Saravanan Yuvaraja, Khaled Nabil Salama
  • METAL-ORGANIC FRAMEWORK COATED ORGANIC FIELD EFFECT TRANSISTOR BASED NO2 SENSOR AND METHOD
    Publication number: 20230060532
    Abstract: An NO2 detection device includes a substrate; a drain formed on the substrate; a source formed on the substrate; a p-type polymer semiconductor layer formed on the substrate, between the drain and the source; and an n-type metal-organic framework layer located over the p-type polymer semiconductor layer. The n-type metal-organic framework layer has apertures having a size larger than a size of the NO2 molecules so that the NO2 molecules pass through the n-type metal-organic framework layer to arrive at the p-type polymer semiconductor layer to increase an electrical current.
    Type: Application
    Filed: February 1, 2021
    Publication date: March 2, 2023
    Inventors: Valeriya CHERNIKOVA, Mohamed EDDAOUDI, Khaled Nabil SALAMA, Osama SHEKHAH, Sandeep G. SURYA, Mani Teja VIJJAPU, Saravanan YUVARAJA
  • InGaZnO (IGZO) BASED SYSTEM FOR GAS DETECTION AT ROOM TEMPERATURE
    Publication number: 20220365022
    Abstract: A gas sensor includes a gate electrode; a dielectric layer covering one surface of the gate electrode; an indium (In) gallium (Ga) zinc (Zn) oxide (O) (IGZO) thin-film formed over the dielectric layer, and first and second metallic electrodes formed on a surface of the IGZO thin-film to act as source and drain, respectively. The IGZO thin-film has an In concentration of 11%+/?3%, Ga concentration of 11%+/?3%, Zn concentration of 7%+/?3%, and 0 concentration of 71%+/?3%, with a sum of the concentrations being 100%, and the gas interacts with the IGZO thin-film and changes a current through the IGZO thin-film.
    Type: Application
    Filed: October 1, 2020
    Publication date: November 17, 2022
    Inventors: Mani Teja VIJJAPU, Sandeep G. SURYA, Saravanan YUVARAJA, Khaled Nabil SALAMA