Abstract: Methods of forming ?-phase gallium oxide materials are provided, including highly conductive and highly phase stable such materials. In embodiments, the method comprises exposing a surface of a substrate positioned in a metalorganic chemical vapor deposition (MOCVD) reactor to a gallium (Ga) precursor vapor, an indium (In) precursor vapor, an oxygen (O) precursor vapor, and a silicon (Si) precursor vapor, under conditions to form a ?-phase gallium oxide material on the surface of the substrate. The ?-phase gallium oxide material comprises Ga, O, Si, and further comprises no more than 0.1 weight % In.

Abstract: Magnetic memory devices are provided. The devices comprise a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer composed of a doped semiconductor (instead of an insulator or a dielectric) between the first and second ferromagnetic layers and forming at least one ferromagnetic-doped semiconductor interface.

Abstract: Diffusion-based and ion implantation-based methods are provided for fabricating planar photodetectors. The methods may be used to fabricate planar photodetectors comprising type II superlattice absorber layers but without mesa structures. The fabricated planar photodetectors exhibit high quantum efficiencies, low dark current densities, and high specific detectivities as compared to photodetectors having mesa structures.

Abstract: Diffusion-based and ion implantation-based methods are provided for fabricating planar photodetectors. The methods may be used to fabricate planar photodetectors comprising type II superlattice absorber layers but without mesa structures. The fabricated planar photodetectors exhibit high quantum efficiencies, low dark current densities, and high specific detectivities as compared to photodetectors having mesa structures.

Abstract: High electron mobility transistors are provided which comprise a III-Nitride semiconductor layer comprising a III-Nitride semiconductor, in contact with a gallium oxide semiconductor layer comprising gallium oxide, forming an interface therebetween.

Abstract: Methods for activating a p-type dopant in a group III-Nitride semiconductor are provided. In embodiments, such a method comprises annealing, in situ, a film of a group III-Nitride semiconductor comprising a p-type dopant formed via metalorganic chemical vapor deposition (MOCVD) at a first temperature for a first period of time under an atmosphere comprising NH3 and N2; and cooling, in situ, the film of the group III-Nitride semiconductor to a second temperature that is lower than the first temperature under an atmosphere comprising N2 in the absence of NH3, to form an activated p-type group III-Nitride semiconductor film.

Abstract: Methods of forming a p-type IV-doped III-VI semiconductor are provided which comprise exposing a substrate to a vapor composition comprising a group III precursor comprising a group III element, a group VI precursor comprising a group VI element, and a group IV precursor comprising a group IV element, under conditions to form a p-type IV-doped III-VI semiconductor via metalorganic chemical vapor deposition (MOCVD) on the substrate. Embodiments make use of a flow ratio defined as a flow rate of the group VI precursor to a flow rate of the group III precursor wherein the flow ratio is below an inversion flow ratio value for the IV-doped III-VI semiconductor.

Abstract: Magnetic memory devices are provided. The devices comprise a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer composed of a doped semiconductor (instead of an insulator or a dielectric) between the first and second ferromagnetic layers and forming at least one ferromagnetic-doped semiconductor interface.

Abstract: Diffusion-based and ion implantation-based methods are provided for fabricating planar photodetectors. The methods may be used to fabricate planar photodetectors comprising type II superlattice absorber layers but without mesa structures. The fabricated planar photodetectors exhibit high quantum efficiencies, low dark current densities, and high specific detectivities as compared to photodetectors having mesa structures.

Abstract: Methods for activating a p-type dopant in a group III-Nitride semiconductor are provided. In embodiments, such a method comprises annealing, in situ, a film of a group III-Nitride semiconductor comprising a p-type dopant formed via metalorganic chemical vapor deposition (MOCVD) at a first temperature for a first period of time under an atmosphere comprising NH3 and N2; and cooling, in situ, the film of the group III-Nitride semiconductor to a second temperature that is lower than the first temperature under an atmosphere comprising N2 in the absence of NH3, to form an activated p-type group III-Nitride semiconductor film.

Abstract: Methods of forming a p-type IV-doped III-VI semiconductor are provided which comprise exposing a substrate to a vapor composition comprising a group III precursor comprising a group III element, a group VI precursor comprising a group VI element, and a group IV precursor comprising a group IV element, under conditions to form a p-type IV-doped III-VI semiconductor via metalorganic chemical vapor deposition (MOCVD) on the substrate. Embodiments make use of a flow ratio defined as a flow rate of the group VI precursor to a flow rate of the group III precursor wherein the flow ratio is below an inversion flow ratio value for the IV-doped III-VI semiconductor.

Abstract: Monolithic, wavelength-tunable QCL devices are provided which comprise a substrate, an array of QCLs formed on the substrate and an optical beam combiner formed on the substrate electrically isolated from the array of QCLs. In embodiments, the QCL devices are configured to provide laser emission in the range of from about 3 ?m to about 12 ?m, a wavelength tuning range of at least about 500 cm?1, and a wavelength tuning step size of about 1.0 nm or less.

Abstract: Monolithic, wavelength-tunable QCL devices are provided which comprise a substrate, an array of QCLs formed on the substrate and an optical beam combiner formed on the substrate electrically isolated from the array of QCLs. In embodiments, the QCL devices are configured to provide laser emission in the range of from about 3 ?m to about 12 ?m, a wavelength tuning range of at least about 500 cm?1, and a wavelength tuning step size of about 1.0 nm or less.

Abstract: The subject invention comprises the realization of P-on-N type II InAs/GaSb superlattice photodiodes. A high-quality InAsSb layer lattice-mismatched to GaSb is used as a buffer to prepare the surface of the substrate prior to superlattice growth. The InAsSb layer also serves as an effective n-contact layer. The contact layer has been optimized to improve device performance, most notably performance that is similar to traditional N-on-P structures.

Abstract: The subject invention comprises the realization of a superlattice photodiode with polyimide surface passivation. Effective surface passivation of type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment, nor time, can be realized by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer.

Abstract: An improved photodiode and method of producing an improved photodiode comprising doping an InAs layer of an InAs/GaSb region situated on top of an InAs/GaSb:Be superlattice and below an InAs:Si/GaSb regions such that the quantum efficiency of the photodiode increases and dominant dark current mechanisms change from diffusion to band-to-band tunneling as the InAs layer is doped with Beryllium.

Abstract: The subject invention comprises the realization of a superlattice photodiode with polyimide surface passivation. Effective surface passivation of type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment, nor time, can be realized by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer.

Abstract: An improved photodiode and method of producing an improved photodiode comprising doping an InAs layer of an InAs/GaSb region situated on top of an InAs/GaSb:Be superlattice and below an InAs:Si/GaSb regions such that the quantum efficiency of the photodiode increases and dominant dark current mechanisms change from diffusion to band-to-band tunneling as the InAs layer is doped with Beryllium.

Abstract: The subject invention comprises the realization of P-on-N type II InAs/GaSb superlattice photodiodes. A high-quality InAsSb layer lattice-mismatched to GaSb is used as a buffer to prepare the surface of the substrate prior to superlattice growth. The InAsSb layer also serves as an effective n-contact layer. The contact layer has been optimized to improve device performance, most notably performance that is similar to traditional N-on-P structures.

Abstract: A type-II InAs/GaSb superlattice photodiode for optimizing quantum efficiency without reducing the differential resistance area product at zero bias. The photodiode features a GaSb: Be buffer, a In/GaSb: Be superlattice, a p-type doped ? region, a InAs: Si/GaSb doped region, and a InAs: Si doped contact layer. The In/GaSb: Be superlattice and InAs: Si/GaSb doped region each having a thickness about two times greater than the thickness of the GaSb: Be buffer. The photodiode in one embodiment featuring a composition of InAs and GaSb with InSb forced interfaces, the composition suitable for being grown on GaSb wafers with a molecular beam epitaxy reactor. A method of optimizing quantum efficiency in a type-II InAs/GaSb superlattice photodiode having a 100% cutoff wavelength around 12 ?m is further provided herewith.