Abstract: A Schmitt trigger circuit includes separate circuits for monitoring change in input signal voltage level in comparison to a low threshold to generate a change in logic state of a first control signal in response to a decrease in a voltage level of the input signal and in comparison to a high threshold to generate a change in logic state of a second control signal in response to an increase in the voltage level of the input signal. A first transistor has a source-drain path connected between a supply node and an output node, with a control terminal of the first transistor configured to receive the second control signal. A second transistor has a source-drain path connected between the output node and a ground node, with a control terminal of the second transistor configured to receive said first control signal.

Abstract: A method and system for providing a seamless transition between applications is disclosed. The system includes a framework which includes an application manager for managing operations of the system, a component retriever in communications with the application manager for retrieving components associated with the applications, a data retriever in communications with the application manager for retrieving data associated with the applications, a memory for storing the retrieved components or data, and a service group including one or more services associated with applications.

Abstract: A memory system includes a sense amplifier electrically coupled to a first bitline and a second bitline associated with a column of a memory array, a bl transistor electrically coupled to the first bitline, wherein the bl transistor is configured to receive as input a first electrical signal from the first bitline, and a blb transistor electrically coupled to the second bitline, wherein the blb transistor is configured to receive as input a second electrical signal from the second bitline, wherein an output of the bl transistor and an output of the blb transistor are electrically coupled together as a common output, and wherein the sense amplifier is configured to receive as an input the common output of the bl transistor and the blb transistor.

Abstract: Providing efficient handling of memory array failures in processor-based systems is disclosed. In this regard, in one aspect, a memory controller of a processor-based device is configured to detect a defect within a memory element of a plurality of memory elements of a memory array. In response, a disable register of one or more disable registers is set to correspond to the memory element to indicate that the memory element is disabled. The memory controller receives a memory access request to a memory address corresponding to the memory element, and determines, based on one or more disable registers, whether the memory element is disabled. If so, the memory controller disallows the memory access request. Some aspects may provide that the memory controller, in response to detecting the defect, provides a failure indication to an executing process, and subsequently receives, from the executing process, a request to set the disable register.

Abstract: Various aspects disclosed herein relate to combining instructions to load data from or store data in memory while processing instructions in a computer processor. More particularly, at least one pattern of multiple memory access instructions that reference a common base register and do not fully utilize an available bus width may be identified in a processor pipeline. In response to determining that the multiple memory access instructions target adjacent memory or non-contiguous memory that can fit on a single cache line, the multiple memory access instructions may be replaced within the processor pipeline with one equivalent memory access instruction that utilizes more of the available bus width than either of the replaced memory access instructions.

Abstract: Systems and methods for synchronizing conversation data between a client and a server in a networked computing environment. A data structure associated with an e-mail conversation is encoded and shuttled between the client and the server. When received at the server, the data structure is analyzed to determine changes within the e-mail conversation. The data structure is subsequently modified to reflect or include only those changes to minimize the amount of information transferred between the server and client.

Abstract: Disclosed is a memory system comprising a sense amplifier electrically coupled to a first bitline and a second bitline associated with a column of a memory array, a bl transistor electrically coupled to the first bitline, wherein the bl transistor is configured to receive as input a first electrical signal from the first bitline, and a blb transistor electrically coupled to the second bitline, wherein the blb transistor is configured to receive as input a second electrical signal from the second bitline, wherein an output of the bl transistor and an output of the blb transistor are electrically coupled together as a common output, and wherein the sense amplifier is configured to receive as an input the common output of the bl transistor and the blb transistor.

Abstract: Cloud-based clinical logging: A method may include obtaining from a first medical device, by a processor, a first datum at a first time; recording the first datum in a database; and transmitting a first message to a first person regarding the first datum if the first datum does not satisfy a pre-determined threshold, where the first message requests an action based on the first datum not satisfying the pre-determined threshold.

Abstract: Voltage level shifter (VLS) circuits employing a pre-conditioning circuit for pre-conditioning an input signal to be voltage level shifted in response to a pre-charge phase are disclosed. A VLS circuit is configured to voltage level shift an input signal in a lower voltage domain on an output node in a higher voltage domain. The VLS circuit includes a pre-charge circuit configured to pre-charge the output node in a pre-charge phase. The VLS circuit also includes a pull-up circuit and a pull-down circuit that are configured to pull-up and pull-down the pre-charge phase of the output node, respectively, in an evaluation phase based on a logic state of the input signal to generate the output signal. To mitigate or avoid contention between the pull-up and pull-down circuits in the evaluation phase, the input signal is pre-conditioned such that the pull-down circuit is deactivated in response to the pre-charge phase.

Abstract: Voltage level shifter (VLS) circuits employing a pre-conditioning circuit for pre-conditioning an input signal to be voltage level shifted in response to a pre-charge phase are disclosed. A VLS circuit is configured to voltage level shift an input signal in a lower voltage domain on an output node in a higher voltage domain. The VLS circuit includes a pre-charge circuit configured to pre-charge the output node in a pre-charge phase. The VLS circuit also includes a pull-up circuit and a pull-down circuit that are configured to pull-up and pull-down the pre-charge phase of the output node, respectively, in an evaluation phase based on a logic state of the input signal to generate the output signal. To mitigate or avoid contention between the pull-up and pull-down circuits in the evaluation phase, the input signal is pre-conditioned such that the pull-down circuit is deactivated in response to the pre-charge phase.

Abstract: Power rail control systems that include power multiplexing circuits that include cross-current conduction protection are disclosed. Power multiplexing circuit includes supply selection circuits each coupled between a respective supply power rail and an output power rail coupled to a powered circuit. To maintain power to the powered circuit during switching coupling of the output power rail, but while also avoiding current cross-conduction path between supply power rails, diode drop control circuits are provided in supply selection circuits. In diode drop operation mode, the diode drop control circuit associated with a higher voltage supply power rail is configured to regulate voltage supplied by such supply power rail to the output power rail to power the powered circuit. A current cross-conduction path is not created, because diode drop control circuits associated with lower voltage supply power rails are reverse biased to prevent current from flowing through their associated supply selection circuits.

Abstract: Providing efficient handling of memory array failures in processor-based systems is disclosed. In this regard, in one aspect, a memory controller of a processor-based device is configured to detect a defect within a memory element of a plurality of memory elements of a memory array. In response, a disable register of one or more disable registers is set to correspond to the memory element to indicate that the memory element is disabled. The memory controller receives a memory access request to a memory address corresponding to the memory element, and determines, based on one or more disable registers, whether the memory element is disabled. If so, the memory controller disallows the memory access request. Some aspects may provide that the memory controller, in response to detecting the defect, provides a failure indication to an executing process, and subsequently receives, from the executing process, a request to set the disable register.

Abstract: Disclosed systems and methods relate to comparison of a first number and a second number. A comparator receives first and second single-ended inputs (i.e., not represented in differential format), which may be n-bits wide, wherein the first input is an inverted version of the first number and the second input is a true version of the second number. A partial match circuit is implemented to generate a partial match output based only on the first single-ended input and the second single-ended input. A partial mismatch circuit is implemented to generate a partial mismatch output based only on the first single-ended input and the second single-ended input. A comparison output circuit is implemented to generate a comparison output of the first and second numbers based on the partial match output and the partial mismatch output.

Abstract: Aspects disclosed herein relate to techniques and an efficient architecture for enabling multi-way reads on highly associative content addressable memory (CAM) arrays. For example, a method for performing a tag search of a tag array can include reading a first subset of stored tag bits from multiple entries of the tag array, and comparing a second subset of stored tag bits from a one or more entries of the tag array against a search-tag to produce one or more possible way hit signals.

Abstract: Voltage level shifter (VLS) circuits employing a pre-conditioning circuit for pre-conditioning an input signal to be voltage level shifted in response to a pre-charge phase are disclosed. A VLS circuit is configured to voltage level shift an input signal in a lower voltage domain on an output node in a higher voltage domain. The VLS circuit includes a pre-charge circuit configured to pre-charge the output node in a pre-charge phase. The VLS circuit also includes a pull-up circuit and a pull-down circuit that are configured to pull-up and pull-down the pre-charge phase of the output node, respectively, in an evaluation phase based on a logic state of the input signal to generate the output signal. To mitigate or avoid contention between the pull-up and pull-down circuits in the evaluation phase, the input signal is pre-conditioned such that the pull-down circuit is deactivated in response to the pre-charge phase.

Abstract: Systems and methods are directed to managing signals in a dual voltage domain comprising a high voltage domain and a low voltage domain. A write bitline driver circuit receives complementary global write bitline signals as input signals from a global write bitline driver in the low voltage domain, and a write enable signal as an input signal in the high voltage domain. The write bitline driver circuit generates complementary local write bitline signals as output signals in the high voltage domain for activating bitlines of a memory bank in the high voltage domain. The complementary local write bitline signals are based on the complementary global write bitline signals, voltage level shifted from the low voltage domain to the high voltage domain and gated by the write enable signal.

Abstract: Computer systems, devices, and associated methods of serializing a web page that is of a first format and includes a plug-in including properties of a second format are disclosed herein. In one embodiment, a method includes identifying, in a manifest for the plug-in, properties for inclusion in the first format in a serialized web page. The manifest may also include metadata associated with the properties in the list of properties. The method includes formatting the properties, including associated property values and metadata, in the first format and adding the formatted properties to the serialized web page. The plug-in properties not included in the manifest can be added to the serialized web page in the second format.

Abstract: Memory systems that provide separate read and write address decoding to support simultaneous memory read and write operations are disclosed. Separating read and write address decoding can avoid circuit conflicts for a simultaneous memory read and write operation even if employing single port memory bit cells. The read and write addresses of respective read and write operations are separately decoded into read and write row and column selects driven to a memory array so that simultaneous read and write operations are not affected by each other. To avoid a circuit conflict for a simultaneous read and write operation, the memory system is configured to prioritize a write row select over a read row select to drive a row of memory bit cells in the memory array. In this manner, that write operation will always be successful regardless of whether the read and write row select are to the same row.

Abstract: Voltage level shifters employing preconditioning circuits are disclosed. Related systems and methods are also disclosed. In one aspect, voltage level shifter is configured to generate a voltage level shifted non-complement output signal and complement output signal corresponding to non-complement input signal and complement input signal, respectively. First pull-up circuit is configured to generate complement output signal in response to non-complement input signal transitioning to logic low voltage. First pull-down circuit is configured to generate non-complement output signal in response to complement input signal transitioning to logic high voltage. First preconditioning circuit is configured to receive non-complement and complement output signals and generate and provide shifted voltage signal to complement output in response to non-complement output signal transitioning to logic low voltage. This allows the complement output signal to transition to the shifted voltage more quickly.

Abstract: Collision detection systems for detecting read-write collisions in memory systems after word line activation are disclosed. In one aspect, a collision detection system is provided. The collision detection system includes a collision detection circuit for each bit cell row of memory array. Each collision detection circuit is configured to receive a write and read word line signal corresponding to the bit cell row. The collision detection circuit is configured to detect a write and read word line signal pair being active for a write and read operation for the same bit cell row. The collision detection circuit is configured to generate a collision detection signal to notify clients associated with the memory system that a read-write collision occurred. Detecting the read-write collisions after read word line activation reduces or avoids overhead delays in the read path, as opposed to detecting read-write collisions prior to activation of the read word line.