Patents by Inventor Manish Hemkar
Manish Hemkar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145230Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.Type: ApplicationFiled: October 28, 2022Publication date: May 2, 2024Applicant: Applied Materials, Inc.Inventors: Abhishek Mandal, Nitin Deepak, Geetika Bajaj, Ankur Kadam, Gopi Chandran Ramachandran, Suraj Rengarajan, Farhad K. Moghadam, Deenesh Padhi, Srinivas M. Satya, Manish Hemkar, Vijay Tripathi, Darshan Thakare
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Publication number: 20210324514Abstract: A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit. The process chamber described herein enables for the processing of multiple substrates simultaneously with improved process gas flow and heat distribution.Type: ApplicationFiled: March 31, 2021Publication date: October 21, 2021Inventors: Zhiyuan YE, Shu-Kwan Danny LAU, Brian H. BURROWS, Lori WASHINGTON, Herman DINIZ, Martin A. HILKENE, Richard O. COLLINS, Nyi O. MYO, Manish HEMKAR, Schubert S. CHU
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Patent number: 10269614Abstract: Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.Type: GrantFiled: October 16, 2015Date of Patent: April 23, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Schubert S. Chu, Kartik Shah, Anhthu Ngo, Karthik Ramanathan, Nitin Pathak, Nyi O. Myo, Paul Brillhart, Richard O. Collins, Kevin Joseph Bautista, Edric Tong, Zhepeng Cong, Anzhong Chang, Kin Pong Lo, Manish Hemkar
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Publication number: 20160133504Abstract: Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.Type: ApplicationFiled: October 16, 2015Publication date: May 12, 2016Inventors: Schubert S. CHU, Kartik SHAH, Anhthu NGO, Karthik RAMANATHAN, Nitin PATHAK, Nyi O. MYO, Paul BRILLHART, Richard O. COLLINS, Kevin Joseph BAUTISTA, Edric TONG, Zhepeng CONG, Anzhong CHANG, Kin Pong LO, Manish HEMKAR
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Patent number: 8991332Abstract: Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.Type: GrantFiled: February 27, 2009Date of Patent: March 31, 2015Assignee: Applied Materials, Inc.Inventors: Satheesh Kuppurao, David K. Carlson, Manish Hemkar, Andrew Lam, Errol Sanchez, Howard Beckford
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Patent number: 8728944Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form an oxide layer having an increased thickness. The oxide layer with the increased thickness is then removed to expose a clean surface of the substrate. The removal of the oxide layer generally includes removal of contaminants present in and on the oxide layer, especially those contaminants present at the interface of the oxide layer and the substrate. An epitaxial layer may then be formed on the clean surface of the substrate.Type: GrantFiled: July 6, 2011Date of Patent: May 20, 2014Assignee: Applied Material, Inc.Inventors: Satheesh Kuppurao, Manish Hemkar, Vinh Tran, Yihwan Kim
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Publication number: 20120034761Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form an oxide layer having an increased thickness. The oxide layer with the increased thickness is then removed to expose a clean surface of the substrate. The removal of the oxide layer generally includes removal of contaminants present in and on the oxide layer, especially those contaminants present at the interface of the oxide layer and the substrate. An epitaxial layer may then be formed on the clean surface of the substrate.Type: ApplicationFiled: July 6, 2011Publication date: February 9, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Satheesh Kuppurao, Manish Hemkar, Vinh Tran, Yihwan Kim
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Publication number: 20110061810Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.Type: ApplicationFiled: March 10, 2010Publication date: March 17, 2011Applicant: Applied Materials, Inc.Inventors: Udayan Ganguly, Joseph M. Ranish, Aaron M. Hunter, Jing Tang, Christopher S. Olsen, Matthew D. Scotney-Castle, Vicky Nguyen, Swaminathan Srinivasan, Johanes F. Swenberg, Anchuan Wang, Nitin K. Ingle, Manish Hemkar, Jose A. Marin
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Patent number: 7718225Abstract: Methods are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated, and may be accomplished by actively keeping the temperature of a first wall of the reaction chamber above the temperature of a second wall during the film formation process.Type: GrantFiled: August 17, 2005Date of Patent: May 18, 2010Assignee: Applied Materials, Inc.Inventors: Satheesh Kuppurao, David K. Carlson, Manish Hemkar, Andrew Lam, Errol Sanchez, Howard Beckford
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Publication number: 20090211523Abstract: Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.Type: ApplicationFiled: February 27, 2009Publication date: August 27, 2009Applicant: Applied Materials, Inc.Inventors: Satheesh Kuppurao, David K. Carlson, Manish Hemkar, Andrew Lam, Errol Sanchez, Howard Beckford
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Patent number: 7396743Abstract: A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.Type: GrantFiled: June 10, 2004Date of Patent: July 8, 2008Inventors: Kaushal K. Singh, David Carlson, Manish Hemkar, Satheesh Kuppurao, Randhir Thakur
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Publication number: 20070232031Abstract: A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.Type: ApplicationFiled: May 22, 2007Publication date: October 4, 2007Inventors: Kaushal Singh, David Carlson, Manish Hemkar, Satheesh Kuppurao, Randhir Thakur
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Patent number: 7262116Abstract: A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.Type: GrantFiled: April 10, 2006Date of Patent: August 28, 2007Assignee: Applied Materials, Inc.Inventors: Kaushal K. Singh, David Carlson, Manish Hemkar, Satheesh Kuppurao, Randhir Thakur
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Publication number: 20070042117Abstract: Methods, systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.Type: ApplicationFiled: August 17, 2005Publication date: February 22, 2007Inventors: Satheesh Kuppurao, David Carlson, Manish Hemkar, Andrew Lam, Errol Sanchez, Howard Beckford
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Publication number: 20060258124Abstract: A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.Type: ApplicationFiled: April 10, 2006Publication date: November 16, 2006Inventors: Kaushal Singh, David Carlson, Manish Hemkar, Satheesh Kuppurao, Randhir Thakur
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Publication number: 20050277272Abstract: A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.Type: ApplicationFiled: June 10, 2004Publication date: December 15, 2005Inventors: Kaushal Singh, David Carlson, Manish Hemkar, Satheesh Kuppurao, Randhir Thakur