Abstract: A cap-based Transcranial Optical Tomography (CTOT) imaging system includes a cap, a first laser, a second laser, a first optical fiber, a second optical fiber, an intensifier, a third optical fiber, a fourth optical fiber, and an image sensor. The cap is configured for placement on a head of a subject to be imaged. The first laser source configured to generate a laser light at a first wavelength. The second laser source configured to generate laser light at a second wavelength. The first optical fiber and the second optical fiber couple the first laser source and the second laser to the cap. The third optical fiber couples the image intensifier to the cap. The fourth optical fiber couples the image intensifier to the cap. The image sensor is coupled to the image intensifier, and is configured to capture an image of intensified light generated by the image intensifier.

Abstract: A HEMT cell includes two or more gallium nitride (“GaN”) high-electron-mobility transistor (“HEMT”) devices electrically connected in series with each other. The HEMT cell includes a HEMT cell drain, a HEMT cell source and a HEMT cell gate. The HEMT cell drain connects with the drain of a first GaN HEMT device in the series. The HEMT cell source connects with the source of a last GaN HEMT device in the series. The HEMT cell gate connects to a first two-dimensional electron gas (“2DEG”) gate bias resistor that connects with the gate of the first GaN HEMT device. The HEMT cell gate connects to a second 2DEG gate bias resistor that connects with the gate of the second GaN HEMT device. The first and second 2DEG gate bias resistors are located in a 2DEG layer of the HEMT cell. A multi-throw RF switch is also disclosed.

Abstract: A system and method to provide patient education prior to surgery or post-surgery is disclosed. The patient education can be customized based on different factors and provided in a progressive sequence. Patients may be required to complete patient educational lessons and also provide feedback to assess how they are doing. Due to a variety of patient circumstances and the potential for abrupt changes in patient health status prior to, during, or following a health procedure, it is necessary for patient education to adapt to a patient's changing needs. The disclosure describes a technique to assign patient education materials in an adaptive and responsive manner.

Abstract: A HEMT cell includes two or more gallium nitride (“GaN”) high-electron-mobility transistor (“HEMT”) devices electrically connected in series with each other. The HEMT cell includes a HEMT cell drain, a HEMT cell source and a HEMT cell gate. The HEMT cell drain connects with the drain of a first GaN HEMT device in the series. The HEMT cell source connects with the source of a last GaN HEMT device in the series. The HEMT cell gate connects to a first two-dimensional electron gas (“2DEG”) gate bias resistor that connects with the gate of the first GaN HEMT device. The HEMT cell gate connects to a second 2DEG gate bias resistor that connects with the gate of the second GaN HEMT device. The first and second 2DEG gate bias resistors are located in a 2DEG layer of the HEMT cell. A multi-throw RF switch is also disclosed.

Abstract: An adjustable threshold power limiter circuit. A number of switching elements are included with at least a first and second switching element that each has a first terminal, a second terminal, and an insulated gate terminal. The switching elements forming a conductive path between its first and second terminals based on a voltage between its insulated gate terminal and one of its first or terminal exceeding a threshold. A conductive path is present with a series connection of the switching elements between a signal input and a reference potential. A controller is included and is electrically coupled to each insulated gate terminal of each switching element to independently provide to each insulated gate terminal either an on voltage or an off voltage.

Abstract: A HEMT cell includes two or more gallium nitride (“GaN”) high-electron-mobility transistor (“HEMT”) devices electrically connected in series with each other. The HEMT cell includes a HEMT cell drain, a HEMT cell source, and a HEMT cell gate. The HEMT cell drain connects with the drain of a first GaN HEMT device in the series. The HEMT cell source connects with the source of a last GaN HEMT device in the series. The HEMT cell gate connects to a first two-dimensional electron gas (“2DEG”) gate bias resistor that connects with the gate of the first GaN HEMT device. The HEMT cell gate connects to a second 2DEG gate bias resistor that connects with the gate of the second GaN HEMT device. The first and second 2DEG gate bias resistors are located in a 2DEG layer of the HEMT cell. A multi-throw RF switch is also disclosed.

Abstract: A HEMT cell includes two or more gallium nitride (“GaN”) high-electron-mobility transistor (“HEMT”) devices electrically connected in series with each other. The HEMT cell includes a HEMT cell drain, a HEMT cell source, and a HEMT cell gate. The HEMT cell drain connects with the drain of a first GaN HEMT device in the series. The HEMT cell source connects with the source of a last GaN HEMT device in the series. The HEMT cell gate connects to a first two-dimensional electron gas (“2DEG”) gate bias resistor that connects with the gate of the first GaN HEMT device. The HEMT cell gate connects to a second 2DEG gate bias resistor that connects with the gate of the second GaN HEMT device. The first and second 2DEG gate bias resistors are located in a 2DEG layer of the HEMT cell. A multi-throw RF switch is also disclosed.

Abstract: A balanced mixer circuit (300, 400, 500, 600, 700 and 800) in a baseband receiver (202) includes an oscillator circuit (212), a mixer (214 and 215), a digital-to-analog converter (258 and 259) and a digital signal processor (250). The mixer includes CMOS devices (301, 302, 303 and 304). In response to differential outputs from the mixer, the digital signal processor controls the digital-to-analog converter to output bias voltages for the gate of at least one of the CMOS devices of the mixer to compensate for imbalance in the differential output of the mixer that may be caused by mismatch among two or more CMOS devices of the mixer or caused by other reasons, in order to increase second order intercept point of the mixer.

Abstract: A method may include reconfigurably enabling one of a first downconverter and a second converter and disabling the other the second downconverter, wherein the first downconverter and the second downconverter are integral to a receiver unit of as wireless communications terminal. The method may also include frequency downconverting received wireless communication signals by the enabled downconverter. The method may also include processing the downconverted wireless communication signals by a primary path if the first downconverter is enabled, and processing the downconverted wireless communication signals by a diversity path if the second downconverter is enabled.

Abstract: Methods and corresponding systems for receiving a radio frequency signal include a receiver capable of switching operating modes and operable to receive the radio frequency signal in any of the operating modes. A metric monitor is coupled to the receiver and operable to provide a metric. A controller is responsive to the metric and operable to switch the receiver between the operating modes. The operating modes can include a zero intermediate frequency (ZIF) mode and a very low intermediate frequency (VLIF) mode. The metric can include a received signal strength indicator (RSSI) and an adjacent channel indicator. The receiver can be configured to operate in the ZIF mode in response to the RSSI value satisfying a threshold and configured to operate in the VLIF mode in response to the RSSI value failing to satisfy the threshold.

Abstract: Methods and corresponding systems for receiving a radio frequency signal include a receiver capable of switching operating modes and operable to receive the radio frequency signal in any of the operating modes. A metric monitor is coupled to the receiver and operable to provide a metric. A controller is responsive to the metric and operable to switch the receiver between the operating modes. The operating modes can include a zero intermediate frequency (ZIF) mode and a very low intermediate frequency (VLIF) mode. The metric can include a received signal strength indicator (RSSI) and an adjacent channel indicator. The receiver can be configured to operate in the ZIF mode in response to the RSSI value satisfying a threshold and configured to operate in the VLIF mode in response to the RSSI value failing to satisfy the threshold.

Abstract: A frequency divider with a twenty-five percent duty cycle is disclosed. A frequency divider may include an input configured to receive a clock signal, each cycle of the clock signal including a first phase and a second phase, a plurality of latches, and a plurality of three-state circuits wherein a first of the plurality of three-state circuits is configured to drive a first twenty-five percent duty cycle signal from within the first three-state circuit high during a first phase of a first of two clock cycles.

Abstract: A technique for improving the linearity of a mixer is disclosed. A converter may include a mixer comprising a first metal-oxide semiconductor field-effect transistor (MOSFET) having a gate, a first conducting terminal coupled to an input of the converter, and a second conducting terminal coupled to an output of the converter, and a mixer driver having a first output coupled to the gate of the first MOSFET, the mixer driver configured to receive a local-oscillator signal having a first phase and a second phase, drive the first MOSFET off during the first phase of the local-oscillator signal, drive the first MOSFET on for a first period of time in response to a transition from the first phase of the local-oscillator signal to the second phase of the local-oscillator signal, and force the gate of the first MOSFET into a high impedance state for a second period of time during the second phase of the local-oscillator signal and after the expiration of the first period of time.

Abstract: A frequency divider with a twenty-five percent duty cycle is disclosed. A frequency divider may include an input configured to receive a clock signal, each cycle of the clock signal including a first phase and a second phase, a plurality of latches, and a plurality of three-state circuits wherein a first of the plurality of three-state circuits is configured to drive a first twenty-five percent duty cycle signal from within the first three-state circuit high during a first phase of a first of two clock cycles.

Abstract: A technique for improving the linearity of a mixer is disclosed. A converter may include a mixer comprising a first metal-oxide semiconductor field-effect transistor (MOSFET) having a gate, a first conducting terminal coupled to an input of the converter, and a second conducting terminal coupled to an output of the converter, and a mixer driver having a first output coupled to the gate of the first MOSFET, the mixer driver configured to receive a local-oscillator signal having a first phase and a second phase, drive the first MOSFET off during the first phase of the local-oscillator signal, drive the first MOSFET on for a first period of time in response to a transition from the first phase of the local-oscillator signal to the second phase of the local-oscillator signal, and force the gate of the first MOSFET into a high impedance state for a second period of time during the second phase of the local-oscillator signal and after the expiration of the first period of time.

Abstract: An IP2 tuning circuit (404, 1004, 1104 and 1404) for tuning the IP2 of a mixer (414 and 415) to minimize second order intermodulation distortion (IMD2) in a receiver (402, 1002, 1102 and 1402) of a transceiver (401, 1001, 1101 and 1401). An operating characteristic of the mixer related to IMD2 is changeable by changing a value of a setting of the mixer. Two tones outside a bandpass of the receiver are injected into the mixer and a calibration tone within the bandpass is produced as a result of IMD2. Alternatively, a DSSS signal is injected into the mixer and the calibration tone is produced at a chip rate of the DSSS signal. The power of the calibration tone is measured at a plurality of values of the settings. Alternatively, a four-level PN DSSS signal of known content is injected into the mixer, and a two-level PN DSSS signal of known content produced therefrom is correlated with a two-level PN DSSS signal of known content produced by a squaring circuit (1468).

Abstract: A high performance radio frequency receiver includes an isolated transconductance amplifier with large binary and stepped gain control range, controlled impedance, and enhanced blocker immunity, for amplifying and converting a radio frequency signal to multiple electrically isolated currents; a pulse generator for generating in-phase and quadrature pulses; a crossover correction circuit and pulse shaper for controlling a crossover threshold of the pulses and interaction between in-phase and quadrature mixers; and a double balanced mixer for combining the RF signal with the pulses to generate an intermediate frequency or baseband zero intermediate frequency current-mode signal. The intermediate frequency signal and second order harmonics may be filtered with a high frequency low pass filter and a current injected complex direct-coupled filter. IIP2 calibration of the in-phase and quadrature channels may be optimized using the isolated transconductance amplifier.

Abstract: A high performance radio frequency receiver includes a low noise amplifier with large binary and stepped gain control range, controlled impedance, and enhanced blocker immunity, for amplifying and converting a radio frequency signal to a current; a pulse generator for generating in-phase and quadrature pulses; a crossover correction circuit and pulse shaper for controlling a crossover threshold of the pulses and interaction between in-phase and quadrature mixers; and a double balanced mixer for combining the RF signal with the pulses to generate an intermediate frequency or baseband zero intermediate frequency current-mode signal. The in-phase and quadrature pulses have a duty cycle of 20-35%. The intermediate frequency signal and second order harmonics may be filtered with a high frequency low pass filter and a current injected complex direct-coupled filter.

Abstract: A method may include reconfigurably enabling one of a first downconverter and a second converter and disabling the other the second downconverter, wherein the first downconverter and the second downconverter are integral to a receiver unit of as wireless communications terminal. The method may also include frequency downconverting received wireless communication signals by the enabled downconverter. The method may also include processing the downconverted wireless communication signals by a primary path if the first downconverter is enabled, and processing the downconverted wireless communication signals by a diversity path if the second downconverter is enabled.

Abstract: A balanced mixer circuit (300, 400, 500, 600, 700 and 800) in a baseband receiver (202) includes an oscillator circuit (212), a mixer (214 and 215), a digital-to-analog converter (258 and 259) and a digital signal processor (250). The mixer includes CMOS devices (301, 302, 303 and 304). In response to differential outputs from the mixer, the digital signal processor controls the digital-to-analog converter to output bias voltages for the gate of at least one of the CMOS devices of the mixer to compensate for imbalance in the differential output of the mixer that may be caused by mismatch among two or more CMOS devices of the mixer or caused by other reasons, in order to increase second order intercept point of the mixer.