Patents by Inventor Manu Tejwani

Manu Tejwani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Safe method for etching silicon dioxide
    Patent number: 5268069
    Abstract: Anhydrous ammonium fluoride is used as a safe source of hydrogen fluoride for etching native or other silicon dioxide layers from silicon substrates. Heating the anhydrous ammonium fluoride above its sublimation temperature results in the generation of hydrogen fluoride gas which etches the silicon dioxide. Controlled amounts of water vapor are used during the etch reaction to ensure complete etching of the thin oxide layers down to within hundredths of a monolayer and to achieve precise etch rate control.
    Type: Grant
    Filed: June 8, 1992
    Date of Patent: December 7, 1993
    Assignee: International Business Machines Corporation
    Inventors: Jonathan D. Chapple-Sokol, Richard A. Conti, David E. Kotecki, Andrew H. Simon, Manu Tejwani