Abstract: Systems for managing thermal dissipation in multi-stacked memory dies, and methods and computer-readable storage media related thereto, are provided. The system includes memory dies including memory blocks to store data. A processing component is configured to maintain memory block states for the memory blocks. The memory block states include: an open memory block state allowing write operations, and a closed memory block state preventing write operations. The processing component is further configured to: receive a first write command to store first data, and compute first relative distances between open memory blocks in the open memory block state. The processing component is further configured to: select a set of open memory blocks for a first write operation based on the first relative distances so as to manage thermal dissipation, and initiate the first write operation on the first set of open memory blocks.

Abstract: Systems for managing thermal dissipation in multi-stacked memory dies, and methods and computer-readable storage media related thereto, are provided. The system includes memory dies including memory blocks to store data. A processing component is configured to maintain memory block states for the memory blocks. The memory block states include: an open memory block state allowing write operations, and a closed memory block state preventing write operations. The processing component is further configured to: receive a first write command to store first data, and compute first relative distances between open memory blocks in the open memory block state. The processing component is further configured to: select a set of open memory blocks for a first write operation based on the first relative distances so as to manage thermal dissipation, and initiate the first write operation on the first set of open memory blocks.

Abstract: Systems for managing thermal dissipation in multi-stacked memory dies, and methods and computer-readable storage media related thereto, are provided. The system includes memory dies including memory blocks to store data. A processing component is configured to maintain memory block states for the memory blocks. The memory block states include: an open memory block state allowing write operations, and a closed memory block state preventing write operations. The processing component is further configured to: receive a first write command to store first data, and compute first relative distances between open memory blocks in the open memory block state. The processing component is further configured to: select a set of open memory blocks for a first write operation based on the first relative distances so as to manage thermal dissipation, and initiate the first write operation on the first set of open memory blocks.

Abstract: A system, method and apparatus for making a semiconductor die includes forming multiple semiconductor devices in a respective portion of a semiconductor wafer. An electrical interconnect structure is formed over the semiconductor devices and provide electrical connections to the semiconductor devices. The electrical interconnect structure including one or more metallization layers. Each of the metallization layers includes conductive lines. At least one portion of at least one of the metallization layers includes a density of the conductive lines that varies as compared to the other portions of the metallization layers. At least one support structure is formed in the electrical interconnect structure. The semiconductor wafer can be a thinned semiconductor wafer.

Abstract: Systems and methods for forming semiconductor wafers with wafer support structures includes: multiple semiconductor devices formed in multiple semiconductor dies. An electrical interconnect structure is formed over the semiconductor devices and providing electrical connections to the semiconductor devices. The electrical interconnect structure includes multiple metallization layers. At least one portion of at least one metallization layer includes variations in density of conductive lines or conducting devices as compared to the other portions of the metallization layers. At least one wafer support structure is formed substantially across a width of the semiconductor wafer. The semiconductor wafer being thinned to between about 40 um and about 200 um after the semiconductor devices formed thereon.

Abstract: A system, method and apparatus for making a semiconductor die includes forming multiple semiconductor devices in a respective portion of a semiconductor wafer. An electrical interconnect structure is formed over the semiconductor devices and provide electrical connections to the semiconductor devices. The electrical interconnect structure including one or more metallization layers. Each of the metallization layers includes conductive lines. At least one portion of at least one of the metallization layers includes a density of the conductive lines that varies as compared to the other portions of the metallization layers. At least one support structure is formed in the electrical interconnect structure. The semiconductor wafer can be a thinned semiconductor wafer.

Abstract: Systems and methods for forming semiconductor wafers with wafer support structures includes: multiple semiconductor devices formed in multiple semiconductor dies. An electrical interconnect structure is formed over the semiconductor devices and providing electrical connections to the semiconductor devices. The electrical interconnect structure includes multiple metallization layers. At least one portion of at least one metallization layer includes variations in density of conductive lines or conducting devices as compared to the other portions of the metallization layers. At least one wafer support structure is formed substantially across a width of the semiconductor wafer. The semiconductor wafer being thinned to between about 40 um and about 200 um after the semiconductor devices formed thereon.

Abstract: A memory system or flash card may include a controller. Improved testing and memory evaluation may be achieved by utilizing the memory's controller rather than an external tester. User defined test algorithms may be run from the controller to characterize, evaluate and test memory (e.g. NAND memory) or test other components, such as the controller itself.

Abstract: A memory system or flash card may include a controller. Improved testing and memory evaluation may be achieved by utilizing the memory's controller rather than an external tester. User defined test algorithms may be run from the controller to characterize, evaluate and test memory (e.g. NAND memory) or test other components, such as the controller itself.