Abstract: A closed-loop liquid cooling system includes a liquid coolant conduit, a cold plate, a pump and a heat exchanger. The liquid coolant conduit is in proximity to a heat-generating electrical component. The liquid coolant conduit allows circulation of a liquid coolant to extract heat therefrom. The liquid coolant conduit includes an inner portion that surrounds and contains the liquid coolant, and an outer portion configured to prevent or inhibit leakage of the liquid coolant from the inner portion and also detect any leakage from the inner portion. The cold plate is in thermal communication with the liquid coolant. The pump is configured to transport the liquid coolant in the liquid coolant conduit. The heat exchanger is coupled to the liquid coolant conduit to extract heat therefrom.

Abstract: An apparatus and method for expanding a box blank into a box, the apparatus comprising an arm assembly, a controller, a camera and a box blank conveyor. The arm assembly includes a folding arm having a position in a first direction and a rotational angle controlled by the controller based on a position of a feature of the box blank in the field of view of the camera. The camera captures images of the box blank which are used to position the arm assembly and to evaluate the need to reject a box blank.

Abstract: Provided are a use of a thermoplastic polyurethane for forming an impact resistant layer and an impact resistant composite laminate. The thermoplastic polyurethane comprises a structural unit represented by Formula (I): wherein each R independently is an alkylene group having 2 to 8 carbon atoms or CH2CH2OCH2CH2; n is a number from 2 to 13; and the structural unit has a Mn ranging from 700 g/mole to 2500 g/mole. In addition, the impact resistant layer has a thickness of larger than 1.5 mm. The impact resistant composite laminate comprises a base layer and the impact resistant layer disposed on the base layer.

Abstract: Provided is a semiconductor device including a substrate, a channel layer, a gate structure, a first doped region, a second doped region, a third doped region and a channel cap layer. The channel layer is located on the substrate. The channel layer has a trench. The gate structure is disposed in the trench. The first doped region and the second doped region are located in the channel layer on two sides of the gate structure. The third doped region is located in the substrate below the channel layer. The channel cap layer is located between the gate structure and the first doped region, between the gate structure and the second doped region, and between the gate structure and the channel layer. An energy band gap of the channel cap layer is larger than an energy band gap of the channel layer.

Abstract: A method for forming a package structure is provided. The method includes disposing a semiconductor die over a carrier substrate, wherein a removable film is formed over the semiconductor die, disposing a first stacked die package structure over the carrier substrate, wherein a top surface of the removable film is higher than a top surface of the first stacked die package structure, and removing the removable film to expose a top surface of the semiconductor die, wherein a top surface of the semiconductor die is lower than the top surface of the first stacked die package structure.

Abstract: A heart valve prosthesis device includes a stent and leaflets. The stent includes an annular part and guide parts. A first end of the annular part includes cell sections arranged in sequence in a circumferential direction of the annular part. The guide parts are arranged at intervals in the circumferential direction of the annular part, one side of each guide part is connected to a corresponding cell section, and the other side gradually tapers to an end where a retrieval cell is provided for a pulling wire to pass through. Each guide part includes a first region being the retrieval cell, a second region aligned with the first region and configured as a central region, and a third region and a fourth region distributed on two sides of the central region in the circumferential direction of the annular part.

Abstract: This application relates to the field of communications technologies. A method includes: A first device receives first configuration information sent by a second device. The first configuration information includes at least one of information about a reference signal, frequency range information of a radio frequency signal, or bandwidth range information. The first device measures a first reference signal set, to obtain a first measured value. The first reference signal set includes at least two reference signals. The first device determines an expansion factor ? based on the first configuration information. The first device determines a second measured value based on the first measured value and the expansion factor ?.

Abstract: Disclosed is a selective field-assisted machining system. The system includes a micron-level high-speed identification module, an in-situ laser assisted module, an ultrasonic vibration module, an energy field loading high-speed control module, and a diamond tool. The micron-level high-speed identification module is used to quickly identify the type of a material substrate of a workpiece to be processed, process the identification information into a corresponding control signal, and send same to the energy field loading high-speed control module to implement selective processing of the workpiece to be processed, i.e. to process brittle particles using in-situ laser assisted machining and to process a soft metal substrate using ultrasonic vibration processing. In the present invention, ultra-precision cutting of brittle particles and a soft metal substrate can be completed at the same time in a single processing process.

Abstract: This disclosure relates to a stretchable composite electrode and a fabricating method thereof, and particularly relates to a stretchable composite electrode including a silver nanowire layer and a flexible polymer film and a fabricating method thereof.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a package substrate, a semiconductor chip disposed over the package substrate, and an integrated device located below and bonded to the lower surface of the semiconductor chip. The semiconductor chip has a lower surface facing the package substrate and is electrically connected to the package substrate through conductive structures. The integrated device is laterally surrounded by the conductive structures, and the integrated device and the conductive structures are located within boundaries of the semiconductor chip when viewed in a direction perpendicular to the lower surface of the semiconductor chip.

Abstract: A method includes: bonding a plurality of interposer dies to a first redistribution layer (RDL), each of the interposer dies comprising a substrate and a second RDL below the substrate; encapsulating the first RDL and the interposer dies; reducing a thickness of the substrate of each of the interposer dies; and electrically coupling the interposer dies to a first semiconductor die.

Abstract: A bendable sheath and a delivery system using the bendable sheath. The bendable sheath comprises a tube body (3). The tube body (3) comprises a distal end and a proximal end. A tube wall of the tube body (3) is connected to a pull wire (8). One end of the pull wire (8) extends towards the proximal end of the tube body (3), and the other end is connected to the tube body (3) near the distal end of the tube body (3). The pull wire (8) comprises at least a section thereof disposed freely outside the tube body (3) and near the distal end of the tube body (3). The pull wire (8) in the bendable sheath comprises the section disposed freely outside the sheath tube body (3) and, when pulled, the section is disposed so as to facilitate the application of force. The section moves relative to the tube body (3), such that a force application point is adaptively changed.

Abstract: An integrated circuit package integrates a photonic die (oDie) and an electronic die (eDie). More specifically, the integrated circuit package may include a plurality of redistribution layers communicatively coupled to at least one of the oDie and/or the eDie, where molded material at least partially surrounds the at least one of the oDie and/or the eDie.

Abstract: A system includes a rack of servers and a fluid circuit for cooling the rack of servers. The fluid circuit includes one or more cooling modules, a heat-exchanging module, and a pump. The one or more cooling modules are thermally connected to a conduit for flowing a coolant therethrough. Each cooling module includes a heat-exchanger thermally connected to the conduit and a chiller fluidly coupled to the heat-exchanger. The heat-exchanging module is fluidly connected to an outlet of the conduit. The pump is configured to drive the coolant from the heat-exchanging module to each server in the rack of servers.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: Provided is a package structure including a die, a through via, an encapsulant, a warpage controlling layer, and a cap. The through via is laterally aside the die. The encapsulant laterally encapsulates the through via and the die. The warpage controlling layer covers the encapsulant and the die. The cap is laterally aside the warpage controlling layer and on the through via. The cap has a top surface higher than a top surface of the encapsulant and lower than a top surface of the warpage controlling layer.

Abstract: A semiconductor structure, comprising a redistribution layer (RDL) including a dielectric layer and a conductive trace within the dielectric layer; a first conductive member disposed over the RDL and electrically connected with the conductive trace; a second conductive member disposed over the RDL and electrically connected with the conductive trace; a first die disposed over the RDL; a second die disposed over the first die, the first conductive member and the second conductive member; and a connector disposed between the second die and the second conductive member to electrically connect the second die with the conductive trace, wherein the first conductive member is electrically isolated from the second die.

Abstract: An apparatus and method for expanding a box blank into a box, the apparatus comprising an arm assembly, a controller, a camera and a box blank conveyor. The arm assembly includes a folding arm having a position in a first direction and a rotational angle controlled by the controller based on a position of a feature of the box blank in the field of view of the camera. The camera captures images of the box blank which are used to position the arm assembly and to evaluate the need to reject a box blank.

Abstract: A method for forming a package structure is provided, including forming an interconnect structure over a carrier substrate and forming a semiconductor die over a first side of the interconnect structure. A removable film is formed over the semiconductor die. The method includes forming a first stacked die package structure over the first side of the interconnect structure. A top surface of the removable film is higher than a top surface of the first stacked die package structure. The method includes forming a package layer, removing a portion of the package layer to expose a portion of the removable film, removing the removable film to form a recess, forming a lid structure over the semiconductor die and the first stacked die package structure. The lid structure has a main portion and a protruding portion disposed in the recess and extending from the main portion.

Abstract: An embodiment is a structure including a first semiconductor device and a second semiconductor device, a first set of conductive connectors mechanically and electrically bonding the first semiconductor device and the second semiconductor device, a first underfill between the first and second semiconductor devices and surrounding the first set of conductive connectors, a first encapsulant on at least sidewalls of the first and second semiconductor devices and the first underfill, and a second set of conductive connectors electrically coupled to the first semiconductor device, the second set of conductive connectors being on an opposite side of the first semiconductor device as the first set of conductive connectors.