Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A method for manufacturing a semiconductor device to which corresponds a layout diagram stored on a non-transitory computer-readable medium. The method includes generating the layout diagram using an electronic design system (EDS), the EDS including at least one processor and at least one memory including computer program code for one or more programs are configured to cause the EDS to execute the generating. Testing the semiconductor device. Revising, the layout diagram, based on testing results indicative of selected standard functional cells in the layout diagram which merit modification or replacement. Programming one or more of the ECO cells which correspond to the one or more selected standard functional cells resulting in one or more programmed ECO cells. Routing the one or more programmed ECO cells correspondingly to at least one of the selected standard functional cells or to one or more other ones of the standard functional cells.

Abstract: A method of modifying a layout for an integrated circuit (IC) includes: selecting, in the layout, a circuit region to be scaled; setting a fixed area including a fixed feature in the selected circuit region; and scaling the selected circuit region, without scaling the fixed area including the fixed feature, to obtain a modified layout for the IC.

Abstract: A method for manufacturing a semiconductor device to which corresponds a layout diagram stored on a non-transitory computer-readable medium. The method includes generating the layout diagram using an electronic design system (EDS), the EDS including at least one processor and at least one memory including computer program code for one or more programs are configured to cause the EDS to execute the generating. Testing the semiconductor device. Revising, the layout diagram, based on testing results indicative of selected standard functional cells in the layout diagram which merit modification or replacement. Programming one or more of the ECO cells which correspond to the one or more selected standard functional cells resulting in one or more programmed ECO cells. Routing the one or more programmed ECO cells correspondingly to at least one of the selected standard functional cells or to one or more other ones of the standard functional cells.

Abstract: A method of manufacturing a semiconductor device (for a layout diagram stored on a non-transitory computer-readable medium) includes generating the layout diagram. The generating the layout diagram includes: placing standard functional cells to partially fill a logic area of the layout diagram according to at least one corresponding schematic design thereby leaving, as unfilled, a spare region in the logic area; selecting a first pitch for additional cells to be placed in the spare region, wherein use of the first pitch minimizes wasted space in the spare region; selecting standard not-yet-programmed (SNYP) spare cells, which are to become at least some of the additional cells, according to the first pitch; and placing the selected SNYP spare cells into the spare region of the layout diagram.

Abstract: A method of manufacturing a semiconductor device (for a layout diagram stored on a non-transitory computer-readable medium) includes generating the layout diagram. The generating the layout diagram includes: placing standard functional cells to partially fill a logic area of the layout diagram according to at least one corresponding schematic design thereby leaving, as unfilled, a spare region in the logic area; selecting a first pitch for additional cells to be placed in the spare region, wherein use of the first pitch minimizes wasted space in the spare region; selecting standard not-yet-programmed (SNYP) spare cells, which are to become at least some of the additional cells, according to the first pitch; and placing the selected SNYP spare cells into the spare region of the layout diagram.

Abstract: A semiconductor device including: standard functional cells located in a logic area; standard spare cells arranged in a spare region of the logic area; and a metallization layer including segments, some of the segments being included in corresponding ones of the functional cells, some of the segments being included in corresponding ones of the spare cells, and some of the segments representing strap lines; and wherein a first pitch of the standard spare cells is based on a second pitch of the strap lines.

Abstract: A semiconductor device including: standard functional cells located in a logic area; standard spare cells arranged in a spare region of the logic area; and a metallization layer including segments, some of the segments being included in corresponding ones of the functional cells, some of the segments being included in corresponding ones of the spare cells, and some of the segments representing strap lines; and wherein a first pitch of the standard spare cells is based on a second pitch of the strap lines.

Abstract: A cell comprising at least one diffusion region and a plurality of interconnection conductive patterns located over the at least one diffusion layer and comprising a first outer interconnection conductive pattern and a second outer interconnection conductive pattern. The cell further includes at least one different conductive pattern located above the at least one diffusion region and interspersed between the plurality of interconnection conductive patterns. The at least one diffusion region extends in a first direction and the plurality of interconnection conductive patterns and at least one different conductive pattern extend in a second direction substantially perpendicular to the first direction.

Abstract: A method of designing, for a semiconductor device, a layout which includes standard spare cells. Such a method includes: generating a set of possible values for a first pitch of standard spare cells based on a second pitch of strap lines of a metallization layer; selecting one member of the possible values set to be the first pitch; and placing standard spare cells into a logic area of the layout according to the first pitch; wherein at least one of the generating, selecting and placing is executed by a processor of a computer.

Abstract: A method of designing, for a semiconductor device, a layout which includes standard spare cells. Such a method includes: generating a set of possible values for a first pitch of standard spare cells based on a second pitch of strap lines of a metallization layer; selecting one member of the possible values set to be the first pitch; and placing standard spare cells into a logic area of the layout according to the first pitch; wherein at least one of the generating, selecting and placing is executed by a processor of a computer.

Abstract: A cell comprising at least one diffusion region and a plurality of interconnection conductive patterns located over the at least one diffusion layer and comprising a first outer interconnection conductive pattern and a second outer interconnection conductive pattern. The cell further includes at least one different conductive pattern located above the at least one diffusion region and interspersed between the plurality of interconnection conductive patterns. The at least one diffusion region extends in a first direction and the plurality of interconnection conductive patterns and at least one different conductive pattern extend in a second direction substantially perpendicular to the first direction.