Abstract: A substrate used for III-V-nitride growth and a manufacturing method thereof, the manufacturing method including the following steps: 1) providing a growth substrate, and forming on the surface of the growth substrate a buffer layer used for subsequent growth of a luminescent epitaxial structure; 2) forming a semiconductor dielectric layer on the surface of the buffer layer; 3) by a photolithography process, etching a plurality of semiconductor dielectric protrusions arranged at intervals on the semiconductor dielectric layer, and exposing the buffer layer between the semiconductor dielectric protrusions. This method ensures the crystal quality of the grown luminescent epitaxial structure and also raises the luminescent efficiency of a light-emitting diode. The process is simple, advantageous for reducing cost of manufacture, and suitable for use in industrial production.

Abstract: A substrate used for III-V-nitride growth and a manufacturing method thereof, the manufacturing method including the following steps: 1) providing a growth substrate, and forming on the surface of the growth substrate a buffer layer used for subsequent growth of a luminescent epitaxial structure; 2) forming a semiconductor dielectric layer on the surface of the buffer layer; 3) by a photolithography process, etching a plurality of semiconductor dielectric protrusions arranged at intervals on the semiconductor dielectric layer, and exposing the buffer layer between the semiconductor dielectric protrusions. This method ensures the crystal quality of the grown luminescent epitaxial structure and also raises the luminescent efficiency of a light-emitting diode. The process is simple, advantageous for reducing cost of manufacture, and suitable for use in industrial production.

Abstract: A substrate used for III-V-nitride growth and a manufacturing method thereof, the manufacturing method comprising the following steps: 1) providing a growth substrate, and forming on the surface of the growth substrate a buffer layer used for subsequent growth of a luminescent epitaxial structure; 2) forming a semiconductor dielectric layer on the surface of the buffer layer; 3) by means of a photolithography process, etching a plurality of semiconductor dielectric protrusions arranged at intervals on the semiconductor dielectric layer, and exposing the buffer layer between the semiconductor dielectric protrusions. This method ensures the crystal quality of the grown luminescent epitaxial structure and also raises the luminescent efficiency of a light-emitting diode. The process is simple, advantageous for reducing cost of manufacture, and suitable for use in industrial production.

Abstract: Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InxGa1-xN/InyGa1-yN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).

Abstract: Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InxGa1−xN/InyGa1−yN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).

Abstract: Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InxGa1−xN/InyGa1−yN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).

Abstract: Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InxGa1-xN/InyGa1-yN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).