Abstract: A plasma source assembly for use with a substrate processing chamber is described. The assembly includes a ceramic lower plate with a plurality of apertures formed therein. A method of processing a substrate in a substrate processing chamber including the plasma source assembly is also described.

Abstract: A plasma source assembly for use with a substrate processing chamber is described. The assembly includes a ceramic lower plate with a plurality of apertures formed therein. A method of processing a substrate in a substrate processing chamber including the plasma source assembly is also described.

Abstract: A ceramic part having a surface exposed to the interior space, the surface having been shaped and treated to reduce particles thereon by formation of an oxide layer on the surface in which particles produced by shaping are incorporated in the oxide layer optionally followed by stripping the oxide layer. The ceramic part can be made by machining a surface of the ceramic part and oxidizing the surface such that particles produced by the machining are incorporated in an oxide layer on the surface. The oxide layer can be chemically stripped to remove the oxide layer with the particles incorporated therein. During processing of semiconductor substrates, particle contamination can be minimized by the ceramic part as a result of incorporating the particles in the oxide layer or as a result of removing the oxide layer. The ceramic part can be made of various materials such as carbon, silicon, silicon carbide, silicon nitride, boron nitride, boron carbide, aluminum nitride or titanium carbide.