Patents by Inventor Marc Sulfridge
Marc Sulfridge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11075244Abstract: Implementations of image sensors may include: a first die including a plurality of detectors adapted to convert photons to electrons; a second die including a plurality of transistors, passive electrical components, or both transistors and passive electrical components; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, passive electrical components, or transistors and passive electrical components of the second die may be adapted to enable operation of the plurality of detectors of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.Type: GrantFiled: March 15, 2019Date of Patent: July 27, 2021Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Marc Sulfridge, Vladimir Korobov
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Semiconductor devices and methods for forming patterned radiation blocking on a semiconductor device
Patent number: 10629647Abstract: Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.Type: GrantFiled: July 31, 2019Date of Patent: April 21, 2020Assignee: Micron Technology, Inc.Inventors: Swarnal Borthakur, Marc Sulfridge -
Patent number: 10622391Abstract: An imaging system may include an image sensor package with through-oxide via connections between the image sensor die and the digital signal processing die in the image sensor package. The image sensor die and the digital signal processing die may be attached to each other. The through-oxide via may connect a bond pad on the image sensor die with metal routing paths in the image sensor and digital signal processing dies. The through-oxide via may simultaneously couple the image sensor die to the digital signal processing die. The through-oxide via may be formed through a shallow trench isolation structure in the image sensor die. The through-oxide via may be formed through selective etching of the image sensor and digital signal processing dies.Type: GrantFiled: March 8, 2017Date of Patent: April 14, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Vladimir Korobov, Marc Sulfridge
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SEMICONDUCTOR DEVICES AND METHODS FOR FORMING PATTERNED RADIATION BLOCKING ON A SEMICONDUCTOR DEVICE
Publication number: 20190355779Abstract: Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.Type: ApplicationFiled: July 31, 2019Publication date: November 21, 2019Inventors: Swarnal Borthakur, Marc Sulfridge -
Semiconductor devices and methods for forming patterned radiation blocking on a semiconductor device
Patent number: 10374001Abstract: Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.Type: GrantFiled: July 18, 2017Date of Patent: August 6, 2019Assignee: Micron Technology, Inc.Inventors: Swarnal Borthakur, Marc Sulfridge -
Publication number: 20190214424Abstract: Implementations of image sensors may include: a first die including a plurality of detectors adapted to convert photons to electrons; a second die including a plurality of transistors, passive electrical components, or both transistors and passive electrical components; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, passive electrical components, or transistors and passive electrical components of the second die may be adapted to enable operation of the plurality of detectors of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.Type: ApplicationFiled: March 15, 2019Publication date: July 11, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal BORTHAKUR, Marc SULFRIDGE, Vladimir KOROBOV
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Patent number: 10263030Abstract: Implementations of image sensors may include: a first die including a plurality of detectors adapted to convert photons to electrons; a second die including a plurality of transistors, passive electrical components, or both transistors and passive electrical components; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, passive electrical components, or transistors and passive electrical components of the second die may be adapted to enable operation of the plurality of detectors of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.Type: GrantFiled: January 18, 2017Date of Patent: April 16, 2019Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Marc Sulfridge, Vladimir Korobov
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Patent number: 9818776Abstract: An imaging system may include an image sensor that may be a backside illuminated (BSI) image sensor. The BSI sensor may be bonded to an inactive silicon substrate or bonded to an active silicon substrate like a digital signal processor (DSP). Through-oxide vias (TOVs) may be formed in the image sensor die. A bond pad region may be formed on a light shielding layer to facilitate coupling the light shield to a ground source or other power sources. Color filter housing structures may be formed over active image sensor pixels on the image sensor die. In-pixel grid structures may be integrated with the color filter housing structures to help reduce crosstalk. The light shielding layer may also be formed over reference image sensor pixels on the image sensor die. The TOVs, the in-pixel grid structures, and the light shielding structures may be formed simultaneously.Type: GrantFiled: April 8, 2015Date of Patent: November 14, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Marc Sulfridge
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SEMICONDUCTOR DEVICES AND METHODS FOR FORMING PATTERNED RADIATION BLOCKING ON A SEMICONDUCTOR DEVICE
Publication number: 20170317136Abstract: Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.Type: ApplicationFiled: July 18, 2017Publication date: November 2, 2017Inventors: Swarnal Borthakur, Marc Sulfridge -
Semiconductor devices and methods for forming patterned radiation blocking on a semiconductor device
Patent number: 9741762Abstract: Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.Type: GrantFiled: May 19, 2015Date of Patent: August 22, 2017Assignee: Micron Technology, Inc.Inventors: Swarnal Borthakur, Marc Sulfridge -
Publication number: 20170179176Abstract: An imaging system may include an image sensor package with through-oxide via connections between the image sensor die and the digital signal processing die in the image sensor package. The image sensor die and the digital signal processing die may be attached to each other. The through-oxide via may connect a bond pad on the image sensor die with metal routing paths in the image sensor and digital signal processing dies. The through-oxide via may simultaneously couple the image sensor die to the digital signal processing die. The through-oxide via may be formed through a shallow trench isolation structure in the image sensor die. The through-oxide via may be formed through selective etching of the image sensor and digital signal processing dies.Type: ApplicationFiled: March 8, 2017Publication date: June 22, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal BORTHAKUR, Vladimir KOROBOV, Marc SULFRIDGE
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Patent number: 9679936Abstract: An imaging system may include an image sensor package with through-oxide via connections between the image sensor die and the digital signal processing die in the image sensor package. The image sensor die and the digital signal processing die may be attached to each other. The through-oxide via may connect a bond pad on the image sensor die with metal routing paths in the image sensor and digital signal processing dies. The through-oxide via may simultaneously couple the image sensor die to the digital signal processing die. The through-oxide via may be formed through a shallow trench isolation structure in the image sensor die. The through-oxide via may be formed through selective etching of the image sensor and digital signal processing dies.Type: GrantFiled: February 27, 2014Date of Patent: June 13, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Vladimir Korobov, Marc Sulfridge
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Patent number: 9666638Abstract: Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.Type: GrantFiled: April 19, 2016Date of Patent: May 30, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Kevin W. Hutto, Andrew Perkins, Marc Sulfridge
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Publication number: 20170125472Abstract: Implementations of image sensors may include: a first die including a plurality of detectors adapted to convert photons to electrons; a second die including a plurality of transistors, passive electrical components, or both transistors and passive electrical components; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, passive electrical components, or transistors and passive electrical components of the second die may be adapted to enable operation of the plurality of detectors of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.Type: ApplicationFiled: January 18, 2017Publication date: May 4, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal BORTHAKUR, Marc SULFRIDGE, Vladimir KOROBOV
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Patent number: 9635228Abstract: An image sensor die may include a pixel array formed in an image sensor substrate and covered by a transparent cover layer. The transparent cover layer may be attached to the image sensor substrate using adhesive. Electrical interconnect structures such as conductive vias may be formed in the transparent cover layer and may be used in conveying electrical signals between the image sensor and a printed circuit board. The conductive vias may have one end coupled to a bond pad on the upper surface of the transparent cover layer and an opposing end coupled to a bond pad on the upper surface of the image sensor substrate. The conductive vias may pass through openings that extend through the transparent cover layer and the adhesive. Conductive structures such as wire bonds, stud bumps, or solder balls may be coupled to the bond pads on the surface of the transparent cover layer.Type: GrantFiled: August 22, 2014Date of Patent: April 25, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Nathan Lee, Andrew Perkins, Marc Sulfridge
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Patent number: 9583525Abstract: An image sensor. Implementations may include: a first die including a plurality of pixels; a second die including a plurality of transistors, capacitors, or both transistors and capacitors; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, capacitors or transistors and capacitors of the second die may be adapted to enable operation of the plurality of pixels of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.Type: GrantFiled: June 2, 2015Date of Patent: February 28, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Marc Sulfridge, Vladimir Korobov
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Publication number: 20160358966Abstract: An image sensor. Implementations may include: a first die including a plurality of pixels; a second die including a plurality of transistors, capacitors, or both transistors and capacitors; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, capacitors or transistors and capacitors of the second die may be adapted to enable operation of the plurality of pixels of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.Type: ApplicationFiled: June 2, 2015Publication date: December 8, 2016Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal BORTHAKUR, Marc SULFRIDGE, Vladimir KOROBOV
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Patent number: 9515111Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. The image sensor die may include light shielding structures for preventing reference photodiodes in the image sensor die from receiving light and in-pixel grid structures for preventing cross-talk between adjacent pixels. The light shielding structure may receive a desired biasing voltage through a corresponding TOV, an integral plug structure, and/or a connection that makes contact directly with a polysilicon gate. The in-pixel grid may have a peripheral contact that receives the desired biasing voltage through a light shield, a conductive strap, a TOV, and/or an aluminum pad.Type: GrantFiled: October 20, 2014Date of Patent: December 6, 2016Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Marc Sulfridge
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Publication number: 20160352983Abstract: An imaging system may include an image sensor having an array of pixels. The image sensor may include an array of microlenses formed over a substrate and an array of color filter elements interposed between the microlenses and the substrate. Dielectric wall structures may be interposed between the color filter elements. Light shield structures may be formed within or on the dielectric wall structures and may be used to reduce optical crosstalk between adjacent pixels. The light shield structures may be formed on opposing sides or corners of the color filter elements and may partially or fully extend along the height of the color filter elements. In some arrangements, the light shield structures may each have a vertical portion that contacts a side surface of an adjacent color filter element and a horizontal portion that contacts a lower surface of an adjacent color filter element.Type: ApplicationFiled: May 27, 2015Publication date: December 1, 2016Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Ulrich BOETTIGER, Andrew PERKINS, Marc SULFRIDGE, Swarnal BORTHAKUR
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Patent number: 9497366Abstract: An imaging system may include an image sensor having an array of pixels. The image sensor may include an array of microlenses formed over a substrate and an array of color filter elements interposed between the microlenses and the substrate. Dielectric wall structures may be interposed between the color filter elements. Light shield structures may be formed within or on the dielectric wall structures and may be used to reduce optical crosstalk between adjacent pixels. The light shield structures may be formed on opposing sides or corners of the color filter elements and may partially or fully extend along the height of the color filter elements. In some arrangements, the light shield structures may each have a vertical portion that contacts a side surface of an adjacent color filter element and a horizontal portion that contacts a lower surface of an adjacent color filter element.Type: GrantFiled: May 27, 2015Date of Patent: November 15, 2016Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Ulrich Boettiger, Andrew Perkins, Marc Sulfridge, Swarnal Borthakur