Abstract: Described herein is a composition for selectively etching a layer including a silicon germanium alloy (SiGe) in the presence of a silicon-containing layer, particularly a layer comprising a-Si, SiOx, SiON, SiN, or a combination thereof, the composition including: (a) an oxidizing agent, (b) an acid selected from an inorganic acid and an organic acid, (c) an etchant including a source of fluoride ions, (d) a polyvinylpyrrolidone (PVP), and (e) water.

Abstract: The invention relates to a composition for selectively etching a layer comprising a silicon germanium alloy (SiGe) in the presence of a silicon-containing layer, particularly a layer comprising a-Si, SiOx, SiON, SiN, or a combination thereof, the composition comprising: (a) an oxidizing agent, (b) an acid selected from an inorganic acid and an organic acid, 10 (c) an etchant comprising a source of fluoride ions, (d) a polyvinylpyrrolidone (PVP), and (e) water.

Abstract: Described herein is a non-aqueous composition including (a) an organic solvent, and (b) at least one additive of formulae I, where R1, R2, R3, and R4 are independently selected from C1 to C10 alkyl, C1 to C11 alkylcarbonyl, C6 to C12 aryl, C7 to C14 alkylaryl, and C7 to C14 arylalkyl; and n is 0 or 1.

Abstract: Described herein is a non-aqueous composition including (a) an organic protic solvent, (b) ammonia, and (c) at least one additive of formulae I or II where R1 is H R2 is selected from H, C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C10 aryl, and C6 to C10 aroxy, R3 is selected from R2, R4 is selected from C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C10 aryl, and C6 to C10 aroxy, R10, R12 are independently selected from C1 to C10 alkyl and C1 to C10 alkoxy, m is 1, 2 or 3, and n is 0 or an integer from 1 to 100.

Abstract: The invention relates to the use of a non-aqueous composition comprising an organic solvent and at least one particular siloxane-type additive for treating substrates comprising patterns having line-space dimensions of 50 nm or below and aspect ratios of 4 or more as well as a method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm, aspect ratios of greater or equal 4, or a combination thereof, (2) contacting the substrate at least once with a non-aqueous composition, and (3) removing the non-aqueous composition from the contact with the substrate, wherein the non-aqueous composition comprising an organic solvent and at least one of such siloxane-type additives.

Abstract: The invention relates to the use of a composition comprising a C1 to C6 alkanol and a carboxylic acid ester of formula (I) wherein R1 is selected from a C1 to C6 alkyl, which may be unsubstituted or substituted by OH or F, and —X21—[O—X22]n—H; R2 is selected from a C1 to C6 alkyl, which may be unsubstituted or substituted by OH or F, and —X21—[O—X22]n—H; X21, X22 are independently selected from C1 to C6 alkandiyl, which may be unsubstituted or substituted by OH or F; n is an integer from 1 to 5. wherein, the C1 to C6 alkanol and the carboxylic acid ester are selected so as to form an azeotropic mixture and are present in an amount from 20% by weight below to 20% by weight above such azeotropic mixture.

Abstract: A method for producing films, fibers, and moldings of a polybenzazole polymer (P) by reacting at temperatures of 0 to 120° C. a mixture including (a) aromatic dicarboxylic compound(s) (I): wherein Ar1 is optionally substituted phenylene, naphthalenediyl, anthracenediyl, biphenyldiyl, diphenylmethanediyl, diphenyl ether diyl, diphenyl thio ether diyl, diphenyl sulfone diyl, benzophenonediyl, pyridinediyl, pyrimidinediyl, furandiyl, or thiophenediyl, substituents being —F, —Cl, —Br, —OR1, and —C1-C10-alkyl, R1 being —H or —C1-C10-alkyl; X1 and X2 are independently-OR2, —F, —Cl, or —Br, R2 being —H, —C1-C10-alkyl, —C1-C10-alkenyl or a repeating unit (a): wherein m is a natural number from 1 to 50, and R3 is —H, C1-C10-alkyl, or C1-C10-alkenyl; (b) aromatic diamino compound(s) of formula (IIa), (IIb), (IIc) and/or (IId); (c) at least one ionic liquid (IL), to obtain a product, processing the product at temperatures 0 to 100° C. and heating of the articles obtained at temperatures of 250 to 500° C.

Abstract: The invention relates to the use of a non-aqueous composition comprising an organic solvent and at least one particular siloxane-type additive for treating substrates comprising patterns having line-space dimensions of 50 nm or below and aspect ratios of 4 or more as well as a method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm, aspect ratios of greater or equal 4, or a combination thereof, (2) contacting the substrate at least once with a non-aqueous composition, and (3) removing the non-aqueous composition from the contact with the substrate, wherein the non-aqueous composition comprising an organic solvent and at least one of such siloxane-type additives.

Abstract: The present invention relates to a method for producing a polybenzazole polymer (P) by reacting a reaction mixture (RG) comprising at least one aromatic dicarboxylic compound of the general formula (I), at least one aromatic diamino compound of the general formula (IIa), (IIb), (IIc) and/or (IId) and also at least one ionic liquid (IL). The present invention also relates to the polybenzazole polymer (P), which is obtainable by the method according to the invention, and also to the use of the polybenzazole polymer (P), for example as fiber material.