Patents by Inventor Marco Ahrens

Marco Ahrens has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7354683
    Abstract: A lithography mask has an angled structure element (O) formed by a first opaque segment (O1) and by a second opaque segment (O2). The structure element has at least one reflex angle (?). The angled structure element (O) includes at least one convex section (A) facing the reflex angle (?). At least one transparent structure (T) adjacent to the angled structure element (O) is provided at the convex section (A) of the angled structure element (O). The transparent structure (T) is formed in separated fashion at the convex section (A) of the angled structure element (O) and thus comprises two distinguishable transparent segments (T1, T2) formed at least in sections essentially axially symmetrically with respect to the angle bisector (WH) of the reflex angle.
    Type: Grant
    Filed: August 27, 2004
    Date of Patent: April 8, 2008
    Assignee: Infineon Technologies AG
    Inventors: Molela Moukara, Burkhard Ludwig, Jörg Thiele, Marco Ahrens, Roderick Köhle, Rainer Pforr, Nicolo Morgana
  • Publication number: 20050095512
    Abstract: A lithography mask has an angled structure element (O) formed by a first opaque segment (O1) and by a second opaque segment (O2). The structure element has at least one reflex angle (?). The angled structure element (O) includes at least one convex section (A) facing the reflex angle (?). At least one transparent structure (T) adjacent to the angled structure element (O) is provided at the convex section (A) of the angled structure element (O). The transparent structure (T) is formed in separated fashion at the convex section (A) of the angled structure element (O) and thus comprises two distinguishable transparent segments (T1, T2) formed at least in sections essentially axially symmetrically with respect to the angle bisector (WH) of the reflex angle.
    Type: Application
    Filed: August 27, 2004
    Publication date: May 5, 2005
    Inventors: Molela Moukara, Burkhard Ludwig, Jorg Thiele, Marco Ahrens, Roderick Kohle, Rainer Pforr, Nicolo Morgana
  • Patent number: 6664010
    Abstract: A method is provided in which a pattern for a phase-shifting mask is firstly corrected in a first correction step. Subsequently, the pattern for the trimming mask is corrected with use of the corrected pattern for the phase-shifting mask in a second correction step. Mask data for the production of very-large-scale integrated circuits can be corrected in a simple manner by means of the two correction steps performed in succession.
    Type: Grant
    Filed: August 30, 2001
    Date of Patent: December 16, 2003
    Assignee: Infineon Technologies AG
    Inventors: Marco Ahrens, Wilhelm Maurer, Juergen Knobloch, Rainer Zimmermann
  • Publication number: 20020071997
    Abstract: A method is provided in which a pattern for a phase-shifting mask is firstly corrected in a first correction step. Subsequently, the pattern for the trimming mask is corrected with use of the corrected pattern for the phase-shifting mask in a second correction step. Mask data for the production of very-large-scale integrated circuits can be corrected in a simple manner by means of the two correction steps performed in succession.
    Type: Application
    Filed: August 30, 2001
    Publication date: June 13, 2002
    Applicant: Infineon Techonologies AG
    Inventors: Marco Ahrens, Wilhelm Maurer, Juergen Knobloch, Rainer Zimmerman