Abstract: An integrated capacitive device has a thin-film capacitor formed of first and second electrode layers, electrically separated by a dielectric layer formed of a hydrogen-degradable compound. To protect the dielectric layer from degradation due to hydrogen diffusion, at least one layer of a getter material is provided, selected from alloys of zirconium, vanadium and iron, optionally containing minor quantities of manganese and/or a rare earth group element, and alloys of zirconium with at least one metal of the group of iron, cobalt and nickel, optionally containing up to about 15% by weight of elements of the rare earth group.

Abstract: The specification teaches a device for use in the manufacturing of microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In a preferred embodiment the invention includes a mechanical supporting base, and a layer of a gas absorbing or purifier material is deposited on the base by a variety of techniques and a layer for temporary protection of the purification material is placed on top of the purification material. The temporary protection material is compatible for use in the microdevice and can be removed during the manufacture of the microdevice.

Abstract: The specification teaches a device for use in the manufacturing of microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In a preferred embodiment the invention includes a mechanical supporting base, and discrete deposits of gas absorbing or contaminant removing material on the base by a variety of techniques and a layer for temporary protection of the contaminant removing material on top of the contaminant removing material. Passages are created in the layer which expose the contaminant removing material to atmosphere. The device may be used as a covering for the microdevice as well.

Abstract: There is described an integrated device comprising a thin-film capacitor formed of first and second electrodic layers, electrically separated by a dielectric layer formed of a hydrogen-degradable compound characterized in that it further comprises at least a getter layer of a material of the group consisting of the alloys of zirconium, vanadium and iron, optionally containing minor quantities of manganese and/or elements of the “Rare Earths” group, alloys of zirconium with at least one among the metals of the group consisting of iron, cobalt and nickel, optionally containing up to 15% by weight of elements belonging to the “Rare Earths” group.

Abstract: The specification teaches a device for use in the manufacturing of microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In a preferred embodiment the invention includes a mechanical supporting base, and discrete deposits of gas absorbing or contaminant removing material on the base by a variety of techniques and a layer for temporary protection of the contaminant removing material on top of the contaminant removing material. Passages are created in the layer which expose the contaminant removing material to atmosphere. The device may be used as a covering for the microdevice as well.

Abstract: A getter system for plasma flat panel displays is disclosed. In a plasma flat panel display having front and rear panels sealingly joined together at peripheral edges thereof to define an inner space and a plurality of walls disposed within the inner space, the walls defining a series of substantially parallel secondary channels with openings at first and second ends thereof and a main channel extending along the perimeter of the front and rear panels, the getter system includes at least one nonevaporable getter device disposed within the inner space. The at least one nonevaporable getter device may be located in a portion of the main channel that faces the openings at one of the first and second ends of the secondary channels.

Abstract: A getter system for plasma flat panel displays is disclosed. In a plasma flat panel display having front and rear panels sealingly joined together at peripheral edges thereof to define an inner space and a plurality of walls disposed within the inner space, the walls defining a series of substantially parallel secondary channels with openings at first and second ends thereof and a main channel extending along the perimeter of the front and rear panels, the getter system includes at least one nonevaporable getter device disposed within the inner space. The at least one nonevaporable getter device may be located in a portion of the main channel that faces the openings at one of the first and second ends of the secondary channels.