Patents by Inventor Marco D'Angella
Marco D'Angella has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11346016Abstract: A method of growing a doped monocrystalline ingot using a crystal growing system is provided. The crystal growing system includes a growth chamber, a dopant feeding device, and a feed tube. The method includes preparing a melt of semiconductor or solar-grade material in a crucible disposed within the growth chamber, introducing a solid dopant into the feed tube with the dopant feeding device, melting the solid dopant within the feed tube to a form a liquid dopant, introducing the liquid dopant into the melt below a surface of the melt, and growing a monocrystalline ingot from the melt by contacting the melt with a seed crystal and pulling the seed crystal away from the melt.Type: GrantFiled: December 28, 2018Date of Patent: May 31, 2022Assignee: GlobalWafers Co., Ltd.Inventors: Stephan Haringer, Marco D'Angella, Mauro Diodà
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Patent number: 11299819Abstract: A crystal pulling apparatus for producing an ingot is provided. The apparatus includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a feeding tube, an evaporation receptacle, and a fluid flow restrictor. The feeding tube is positioned within the furnace, and includes at least one feeding tube sidewall, a first end through which a solid dopant is introduced into the feeding tube, and an opening opposite the first end through which a gaseous dopant is introduced into the furnace. The evaporation receptacle is configured to vaporize the dopant therein, and is disposed near the opening of the feeding tube. The fluid flow restrictor is configured to permit the passage of solid dopant therethrough and restrict the flow of gaseous dopant therethrough, and is disposed within the feeding tube between the first end and the evaporation receptacle.Type: GrantFiled: July 23, 2019Date of Patent: April 12, 2022Assignee: GlobalWafers Co., Ltd.Inventors: Stephan Haringer, Roberto Scala, Marco D'Angella
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Patent number: 11085127Abstract: A method of growing a doped monocrystalline ingot using a crystal growing system is provided. The crystal growing system includes a growth chamber, a dopant feeding device, and a feed tube. The method includes preparing a melt of semiconductor or solar-grade material in a crucible disposed within the growth chamber, introducing a solid dopant into the feed tube with the dopant feeding device, melting the solid dopant within the feed tube to a form a liquid dopant, introducing the liquid dopant into the melt below a surface of the melt, and growing a monocrystalline ingot from the melt by contacting the melt with a seed crystal and pulling the seed crystal away from the melt.Type: GrantFiled: December 28, 2018Date of Patent: August 10, 2021Assignee: GlobalWafers Co., Ltd.Inventors: Stephan Haringer, Marco D'Angella, Mauro Diodà
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Patent number: 10889913Abstract: A crystal pulling apparatus for producing an ingot is provided. The apparatus includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a feeding tube, an evaporation receptacle, and a fluid flow restrictor. The feeding tube is positioned within the furnace, and includes at least one feeding tube sidewall, a first end through which a solid dopant is introduced into the feeding tube, and an opening opposite the first end through which a gaseous dopant is introduced into the furnace. The evaporation receptacle is configured to vaporize the dopant therein, and is disposed near the opening of the feeding tube. The fluid flow restrictor is configured to permit the passage of solid dopant therethrough and restrict the flow of gaseous dopant therethrough, and is disposed within the feeding tube between the first end and the evaporation receptacle.Type: GrantFiled: December 20, 2018Date of Patent: January 12, 2021Assignee: GlobalWafers Co., Ltd.Inventors: Stephan Haringer, Roberto Scala, Marco D'Angella
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Publication number: 20200199772Abstract: A method of growing a doped monocrystalline ingot using a crystal growing system is provided. The crystal growing system includes a growth chamber, a dopant feeding device, and a feed tube. The method includes preparing a melt of semiconductor or solar-grade material in a crucible disposed within the growth chamber, introducing a solid dopant into the feed tube with the dopant feeding device, melting the solid dopant within the feed tube to a form a liquid dopant, introducing the liquid dopant into the melt below a surface of the melt, and growing a monocrystalline ingot from the melt by contacting the melt with a seed crystal and pulling the seed crystal away from the melt.Type: ApplicationFiled: December 28, 2018Publication date: June 25, 2020Inventors: Stephan Haringer, Marco D'Angella, Mauro Diodà
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Publication number: 20190345629Abstract: A crystal pulling apparatus for producing an ingot is provided. The apparatus includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a feeding tube, an evaporation receptacle, and a fluid flow restrictor. The feeding tube is positioned within the furnace, and includes at least one feeding tube sidewall, a first end through which a solid dopant is introduced into the feeding tube, and an opening opposite the first end through which a gaseous dopant is introduced into the furnace. The evaporation receptacle is configured to vaporize the dopant therein, and is disposed near the opening of the feeding tube. The fluid flow restrictor is configured to permit the passage of solid dopant therethrough and restrict the flow of gaseous dopant therethrough, and is disposed within the feeding tube between the first end and the evaporation receptacle.Type: ApplicationFiled: July 23, 2019Publication date: November 14, 2019Inventors: Stephan Haringer, Roberto Scala, Marco D'Angella
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Patent number: 10443148Abstract: A method of growing a doped monocrystalline ingot using a crystal growing system is provided. The crystal growing system includes a growth chamber, a dopant feeding device, and a feed tube. The method includes preparing a melt of semiconductor or solar-grade material in a crucible disposed within the growth chamber, introducing a solid dopant into the feed tube with the dopant feeding device, melting the solid dopant within the feed tube to a form a liquid dopant, introducing the liquid dopant into the melt below a surface of the melt, and growing a monocrystalline ingot from the melt by contacting the melt with a seed crystal and pulling the seed crystal away from the melt.Type: GrantFiled: March 10, 2016Date of Patent: October 15, 2019Assignee: GlobalWafers Co., Ltd.Inventors: Stephan Haringer, Marco D'Angella, Mauro Diodà
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Patent number: 10378121Abstract: A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a housing defining a growth chamber, a crucible disposed within the growth chamber containing the melt of semiconductor or solar-grade material, a vacuum pump for drawing exhaust gases out of the growth chamber, and a fluid-cooled exhaust tube connected between the growth chamber and the vacuum pump.Type: GrantFiled: November 22, 2016Date of Patent: August 13, 2019Assignee: GlobalWafers Co., Ltd.Inventors: Mauro Diodà, Marco D'Angella, Hariprasad Sreedharamurthy
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Publication number: 20190136406Abstract: A method of growing a doped monocrystalline ingot using a crystal growing system is provided. The crystal growing system includes a growth chamber, a dopant feeding device, and a feed tube. The method includes preparing a melt of semiconductor or solar-grade material in a crucible disposed within the growth chamber, introducing a solid dopant into the feed tube with the dopant feeding device, melting the solid dopant within the feed tube to a form a liquid dopant, introducing the liquid dopant into the melt below a surface of the melt, and growing a monocrystalline ingot from the melt by contacting the melt with a seed crystal and pulling the seed crystal away from the melt.Type: ApplicationFiled: December 28, 2018Publication date: May 9, 2019Inventors: Stephan Haringer, Marco D'Angella, Mauro Diodà
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Publication number: 20190136405Abstract: A method of growing a doped monocrystalline ingot using a crystal growing system is provided. The crystal growing system includes a growth chamber, a dopant feeding device, and a feed tube. The method includes preparing a melt of semiconductor or solar-grade material in a crucible disposed within the growth chamber, introducing a solid dopant into the feed tube with the dopant feeding device, melting the solid dopant within the feed tube to a form a liquid dopant, introducing the liquid dopant into the melt below a surface of the melt, and growing a monocrystalline ingot from the melt by contacting the melt with a seed crystal and pulling the seed crystal away from the melt.Type: ApplicationFiled: December 28, 2018Publication date: May 9, 2019Inventors: Stephan Haringer, Marco D'Angella, Mauro Diodà
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Publication number: 20190119827Abstract: A crystal pulling apparatus for producing an ingot is provided. The apparatus includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a feeding tube, an evaporation receptacle, and a fluid flow restrictor. The feeding tube is positioned within the furnace, and includes at least one feeding tube sidewall, a first end through which a solid dopant is introduced into the feeding tube, and an opening opposite the first end through which a gaseous dopant is introduced into the furnace. The evaporation receptacle is configured to vaporize the dopant therein, and is disposed near the opening of the feeding tube. The fluid flow restrictor is configured to permit the passage of solid dopant therethrough and restrict the flow of gaseous dopant therethrough, and is disposed within the feeding tube between the first end and the evaporation receptacle.Type: ApplicationFiled: December 20, 2018Publication date: April 25, 2019Inventors: Stephan Haringer, Roberto Scala, Marco D'Angella
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Publication number: 20180044814Abstract: A method of growing a doped monocrystalline ingot using a crystal growing system is provided. The crystal growing system includes a growth chamber, a dopant feeding device, and a feed tube. The method includes preparing a melt of semiconductor or solar-grade material in a crucible disposed within the growth chamber, introducing a solid dopant into the feed tube with the dopant feeding device, melting the solid dopant within the feed tube to a form a liquid dopant, introducing the liquid dopant into the melt below a surface of the melt, and growing a monocrystalline ingot from the melt by contacting the melt with a seed crystal and pulling the seed crystal away from the melt.Type: ApplicationFiled: March 10, 2016Publication date: February 15, 2018Inventors: Stephan Haringer, Marco D'Angella, Mauro Diodà
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Publication number: 20180030614Abstract: A system for growing a crystal ingot from a melt includes a housing and a feed system. The housing defines a growth chamber and an ingot removal chamber positioned above the growth chamber. The feed system includes an enclosure, a feed material reservoir positioned within the enclosure, and a feed channel including an intake end and an outlet end. The intake end is configured to receive feed material from the feed material reservoir. The housing has an opening in communication with the removal chamber and a connector proximate the opening, and the enclosure has an opening and a connector configured to mate with the housing connector. The feed channel is moveable between a retracted position and an extended position in which the feed channel extends through the opening in the housing and the outlet end is positioned within the removal chamber.Type: ApplicationFiled: February 12, 2015Publication date: February 1, 2018Inventors: Stephan Haringer, Gianni Dell'Amico, Marco D'Angella, Renzo Odorizzi, Maria Porrini, Enrico Rigon, Valentino Moser
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Publication number: 20170145587Abstract: A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a housing defining a growth chamber, a crucible disposed within the growth chamber containing the melt of semiconductor or solar-grade material, a vacuum pump for drawing exhaust gases out of the growth chamber, and a fluid-cooled exhaust tube connected between the growth chamber and the vacuum pump.Type: ApplicationFiled: November 22, 2016Publication date: May 25, 2017Inventors: Mauro Diodà, Marco D'Angella, Hariprasad Sreedharamurthy
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Publication number: 20160017513Abstract: A crystal pulling apparatus for producing an ingot is provided. The apparatus includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a feeding tube, an evaporation receptacle, and a fluid flow restrictor. The feeding tube is positioned within the furnace, and includes at least one feeding tube sidewall, a first end through which a solid dopant is introduced into the feeding tube, and an opening opposite the first end through which a gaseous dopant is introduced into the furnace. The evaporation receptacle is configured to vaporize the dopant therein, and is disposed near the opening of the feeding tube. The fluid flow restrictor is configured to permit the passage of solid dopant therethrough and restrict the flow of gaseous dopant therethrough, and is disposed within the feeding tube between the first end and the evaporation receptacle.Type: ApplicationFiled: March 15, 2013Publication date: January 21, 2016Applicant: MEMC ELECTRONIC MATERIALS S.P.A.Inventors: Stephan Haringer, Roberto Scala, Marco D'Angella