Abstract: A treatment support system based on the exposure of a user or surface to solar radiation, comprising a server (WS), a plurality of terminals and one or more satellite and/or meteorological atmospheric data sources interfaced with each other, and a processing unit configured to process treatment administration operational information based on satellite and/or meteorological atmospheric data (D3), geolocation data (D2), and user or treated surface specific data (D1).

Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

Abstract: A technique to make silicon oxide regions from porous silicon and related semiconductor structures is disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

Abstract: A vertical conduction electronic power device includes a body delimited by a first and a second surface and having an epitaxial layer of semiconductor material, and a substrate. The epitaxial layer is delimited by the first surface of the body and the substrate is delimited by the second surface of the body. The epitaxial layer houses at least a first and a second conduction region having a first type of doping and a plurality of insulated-gate regions, which extend within the epitaxial layer. The substrate has at least one silicide region, which extends starting from the second surface of the body towards the epitaxial layer.

Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.

Abstract: The invention relates to a method to control a fuel pump for a direct injection system of a heat engine provided with a common rail comprising the steps of determining a minimum threshold based on the pressure in the common rail and on the speed of the heat engine, on the temperature of the high-pressure pump and on the inlet pressure of the high-pressure pump; calculating the objective fuel flow rate to be fed by the high-pressure pump to the common rail instant by instant in order to have the desired pressure value inside the common rail; comparing the objective fuel flow rate with the minimum threshold; and controlling the high-pressure pump based on the comparison between the objective fuel flow rate and the minimum threshold.

Abstract: A semiconductor body includes a front side and a back side and is configured to support an electronic circuit. A buried region is provided in the semiconductor body at a location between the electronic circuit and the back side. The buried region includes a layer of conductive material and a dielectric layer, where the dielectric layer is arranged between the layer of conductive material and the semiconductor body. A conductive path extends between the buried region and the front side to form a path for electrical access to the layer of conductive material. A capacitor is thus formed with the layer of conductive material providing a capacitor plate and the dielectric layer providing the capacitor dielectric. A further capacitor plate is provided by the semiconductor body, or by a further layer of conductive material in the buried region.

Abstract: A semiconductor body includes a front side and a back side and is configured to support an electronic circuit. A buried region is provided in the semiconductor body at a location between the electronic circuit and the back side. The buried region includes a layer of conductive material and a dielectric layer, where the dielectric layer is arranged between the layer of conductive material and the semiconductor body. A conductive path extends between the buried region and the front side to form a path for electrical access to the layer of conductive material. A capacitor is thus formed with the layer of conductive material providing a capacitor plate and the dielectric layer providing the capacitor dielectric. A further capacitor plate is provided by the semiconductor body, or by a further layer of conductive material in the buried region.

Abstract: The invention relates to a method to control a fuel pump for a direct injection system of a heat engine provided with a common rail comprising the steps of determining a minimum threshold based on the pressure in the common rail and on the speed of the heat engine, on the temperature of the high-pressure pump and on the inlet pressure of the high-pressure pump; calculating the objective fuel flow rate to be fed by the high-pressure pump to the common rail instant by instant in order to have the desired pressure value inside the common rail; comparing the objective fuel flow rate with the minimum threshold; and controlling the high-pressure pump based on the comparison between the objective fuel flow rate and the minimum threshold.

Abstract: A technique to make silicon oxide regions from porous silicon and related semiconductor structures is disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

Abstract: Method to determine a closing instant of an electromagnetic fuel injector; in a beginning instant of the injection, a positive voltage is applied to a coil of an electromagnetic actuator so as to cause an electric current to circulate through the coil, said electric current determining the opening of an injection valve; in an end instant of the injection, a negative voltage is applied to the coil of the electromagnetic actuator so as to cancel the electric current circulating through the coil; a first voltage time development is detected at least one end of the coil of the electromagnetic actuator after the cancellation of the electric current circulating through the coil; the voltage actuation time development is compared with a voltage comparison time development; and the closing instant of the electromagnetic injector is determined based on the comparison between the voltage actuation time development and the voltage comparison time development.

Abstract: Method to determine an opening time of an electromagnetic fuel injector; the electromagnetic fuel injector is controlled using a series of progressively increasing energization times of the electromagnetic actuator; for each control of the electromagnetic injector, the presence or the absence of a closing of the injection valve is detected; the opening time is identified, which is equal to an intermediate value between the last energization time of the electromagnetic actuator for which the absence of a closing of the injection valve was determined and the first energization time of the electromagnetic actuator for which the presence of a closing of the injection valve was determined.

Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

Abstract: A technique to make silicon oxide regions from porous silicon and related semiconductor structures are disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

Abstract: A technique to make silicon oxide regions from porous silicon and related semiconductor structures are disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

Abstract: A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

Abstract: Method to determine a closing instant of an electromagnetic fuel injector; in a beginning instant of the injection, a positive voltage is applied to a coil of an electromagnetic actuator so as to cause an electric current to circulate through the coil, said electric current determining the opening of an injection valve; in an end instant of the injection, a negative voltage is applied to the coil of the electromagnetic actuator so as to cancel the electric current circulating through the coil; a first voltage time development is detected at least one end of the coil of the electromagnetic actuator after the cancellation of the electric current circulating through the coil; the voltage actuation time development is compared with a voltage comparison time development; and the closing instant of the electromagnetic injector is determined based on the comparison between the voltage actuation time development and the voltage comparison time development.

Abstract: Method to determine an opening time of an electromagnetic fuel injector; the electromagnetic fuel injector is controlled using a series of progressively increasing energization times of the electromagnetic actuator; for each control of the electromagnetic injector, the presence or the absence of a closing of the injection valve is detected; the opening time is identified, which is equal to an intermediate value between the last energization time of the electromagnetic actuator for which the absence of a closing of the injection valve was determined and the first energization time of the electromagnetic actuator for which the presence of a closing of the injection valve was determined.

Abstract: A semiconductor body includes a front side and a back side and is configured to support an electronic circuit. A buried region is provided in the semiconductor body at a location between the electronic circuit and the back side. The buried region includes a layer of conductive material and a dielectric layer, where the dielectric layer is arranged between the layer of conductive material and the semiconductor body. A conductive path extends between the buried region and the front side to form a path for electrical access to the layer of conductive material. A capacitor is thus formed with the layer of conductive material providing a capacitor plate and the dielectric layer providing the capacitor dielectric. A further capacitor plate is provided by the semiconductor body, or by a further layer of conductive material in the buried region.