Abstract: A microtechnical component for a magnetic sensor device or a magnetic actuator includes: a magnetic core oriented along an axis; a first drive coil having windings arranged in a first direction of rotation about the magnetic core; a contact, via which a first current flow is created in a first current direction through the first drive coil; and a second drive coil having windings arranged in a second direction of rotation about the magnetic core, the first and second directions of rotation differing from one another. Simultaneously with the first current flow, a second current flow is created via the contact in a second current direction opposite the first current direction through the second drive coil.

Abstract: A microtechnical component for a magnetic sensor device or a magnetic actuator includes: a magnetic core oriented along an axis; a first drive coil having windings arranged in a first direction of rotation about the magnetic core; a contact, via which a first current flow is created in a first current direction through the first drive coil; and a second drive coil having windings arranged in a second direction of rotation about the magnetic core, the first and second directions of rotation differing from one another. Simultaneously with the first current flow, a second current flow is created via the contact in a second current direction opposite the first current direction through the second drive coil.

Abstract: The invention relates to a current mirror circuit (110) having a first transistor (112) and a second transistor (114), each of which have a control terminal (128, 136), formed particularly as a base or gate, and in each case two current terminals (124, 126, 132, 134), formed particularly as an emitter and collector or drain and source, whereby the control terminals (128, 136) of both transistors (112, 114) are connected to one another in an electrically conducting way at a connection node (140) and to a first current terminal (124, 126) of the first transistor (112) via a connecting line (150). It is provided according to the invention that the connecting line (150) is assigned bias means, provided for shifting an electric potential at the first current terminal (124) of the first transistor (112) relative to an electric potential of the connection node (140).

Abstract: An integrated semiconductor circuit is provided with a connection node, which is provided for decoupling electric signals, and with a plurality of electric signal lines, which are formed to provide in-circuit signals, particularly test signals, to the connection node. An in-circuit release device, which can be switched between a release state to release the signal line and a blocking state to block the signal line, is looped in the signal lines. The release device has switching means, which are formed in such a way that the blocking state for the signal line is assured irrespective of a signal or test signal electric potential applied to the signal line. The release device furthermore, has control means, which are provided for controlling the switching means. The control means can be formed in such a way that a cross-current-free release of the specific signal line is assured.