Abstract: Aspects of the present invention concern a device and a process for continuous production of substrates provided with organic electroluminescent materials (OLED), especially OLED displays, screens, panels or other lighting elements, in which the device has a vacuum space and a transport device for transporting the substrates to be coated, which is at least partially arranged along the vacuum space and comprises carriers for the substrates, with the transport device comprising at least one endless loop for transport of the carriers and with the vacuum space being divided at least into two with a first part, in which is provided a first section of the transport device for transporting the carriers in a first direction (substrate-transport direction), and with a second part, in which is provided a second section of the transport device for transport of the carriers in a second direction (carrier-return-transport direction).

Abstract: The invention relates to an arrangement for the coating of substrates, which comprises an evaporation source and a vapor barrier between the evaporation source and the substrate. The vapor barrier is maintained at a temperature which is at least equal to or above the vaporization temperature of the material to be vaporized. The vapor barrier is implemented as a quartz valve, which includes a spherical closure part connected with a movable rod. In a first position this spherical closure part closes a vapor conducting tube, which is connected with the evaporation source, and, in a second position, the spherical closure part abuts a spherical calotte which seals off a quartz tube.

Abstract: In a method for producing ITO layers on substrates, especially for the production of organic light-emitting diodes, part of the ITO layer thickness is applied first by sputter-deposition, at a controlled temperature profile, in such manner that the formation of crystallization nuclei is prevented; subsequently, the partially coated substrate is heated to a temperature above the recrystallization temperature of the ITO layer, and then the rest of the ITO layer is sputter-deposited.

Abstract: On a glass substrate, a base layer of indium cerium oxide is deposited, and on this a thin copper-containing silver layer, both produced by means of DC sputtering. On top there is another indium cerium oxide layer, which is produced by means of AC-superimposed DC sputter deposition. This layer system boasts very low surface resistivity combined with high transparency in the visible part of the spectrum, which means it has a high Haacke quality factor.

Abstract: In a method for producing ITO layers on substrates, especially for the production of organic light-emitting diodes, part of the ITO layer thickness is applied first by sputter-deposition, at a controlled temperature profile, in such manner that the formation of crystallization nuclei is prevented; subsequently, the partially coated substrate is heated to a temperature above the recrystallization temperature of the ITO layer, and then the rest of the ITO layer is sputter-deposited.