Abstract: An improved wafer bonding method applying at least one prebonding element that deflects in the out-of-plane direction.

Abstract: A microelectromechanical device structure comprises a supporting structure wafer. A cavity electrode is formed within a cavity in the supporting structure wafer. The cavity electrode forms a protruding structure from a base of the cavity towards the functional layer, and the cavity electrode is connected to a defined electrical potential. The cavity electrode comprises a silicon column within the cavity in the supporting structure wafer, which is partially or entirely surrounded by a cavity. One or more cavity electrodes may be utilized for adjusting a frequency of an oscillation occurring within the functional layer.

Abstract: A microelectromechanical gyroscope structure, and a method for manufacturing a microelectromechanical gyroscope structure, comprising a seismic mass and a spring structure suspending the seismic mass to a body element with a suspension structure. The spring structure allows a primary oscillation motion about a primary axis that is aligned with the plane of the seismic mass, and a secondary oscillation motion where at least part of the seismic mass moves in a second direction, perpendicular to the direction of the primary oscillation motion. The spring structure is attached to the seismic mass at both sides of the suspension structure and said spring structure is in torsional motion about the primary axis that is common with the primary oscillation motion. The structure of the gyroscope enables mechanical compensation of a quadrature error of the seismic mass by etching a compensation groove on the top face of the seismic mass.

Abstract: A microelectromechanical device structure comprises a supporting structure wafer. A cavity electrode is formed within a cavity in the supporting structure wafer. The cavity electrode forms a protruding structure from a base of the cavity towards the functional layer, and the cavity electrode is connected to a defined electrical potential. The cavity electrode comprises a silicon column within the cavity in the supporting structure wafer, which is partially or entirely surrounded by a cavity. One or more cavity electrodes may be utilized for adjusting a frequency of an oscillation occurring within the functional layer.

Abstract: A microelectromechanical gyroscope structure that comprises a seismic mass, a body element, and a spring structure suspending the seismic mass to the body element. In primary oscillation at least part of the seismic mass oscillates in out-of-plane direction. A first conductor is arranged to move with the seismic mass, and a second conductor is attached to the body element. The conductors include adjacent surfaces that extend in the first direction and the third direction. A voltage element is arranged to create between the first surface and the second surface a potential difference and thereby induce an electrostatic force in the second direction and modulated by the primary oscillation of the seismic mass.

Abstract: A method for manufacturing microelectromechanical flexural resonators with a deforming element that has an elongate body extending along a spring axis. A deforming element is positioned on the semiconductor wafer with a defined nominal n-type doping concentration such that a crystal orientation angle is formed between the spring axis of the deforming element and a crystal axis of the silicon semiconductor wafer. The combination of the crystal orientation angle and the nominal n-type doping concentration is adjusted to a specific range, based on total frequency error of the deforming element in a broad temperature range. The combination is optimized to a range where also sensitivity to variations in the material properties is minimized.

Abstract: A microelectromechanical gyroscope structure, and a method for manufacturing a microelectromechanical gyroscope structure, comprising a seismic mass and a spring structure suspending the seismic mass to a body element with a suspension structure. The spring structure allows a primary oscillation motion about a primary axis that is aligned with the plane of the seismic mass, and a secondary oscillation motion where at least part of the seismic mass moves in a second direction, perpendicular to the direction of the primary oscillation motion. The spring structure is attached to the seismic mass at both sides of the suspension structure and said spring structure is in torsional motion about the primary axis that is common with the primary oscillation motion. The structure of the gyroscope enables mechanical compensation of a quadrature error of the seismic mass by etching a compensation groove on the top face of the seismic mass.

Abstract: A microelectromechanical gyroscope structure that comprises a seismic mass, a body element, and a spring structure suspending the seismic mass to the body element. In primary oscillation at least part of the seismic mass oscillates in out-of-plane direction. A first conductor is arranged to move with the seismic mass, and a second conductor is attached to the body element. The conductors include adjacent surfaces that extend in the first direction and the third direction. A voltage element is arranged to create between the first surface and the second surface a potential difference and thereby induce an electrostatic force in the second direction and modulated by the primary oscillation of the seismic mass.

Abstract: A method for manufacturing microelectromechanical flexural resonators with a deforming element that has an elongate body extending along a spring axis. A deforming element is positioned on the semiconductor wafer with a defined nominal n-type doping concentration such that a crystal orientation angle is formed between the spring axis of the deforming element and a crystal axis of the silicon semiconductor wafer. The combination of the crystal orientation angle and the nominal n-type doping concentration is adjusted to a specific range, based on total frequency error of the deforming element in a broad temperature range. The combination is optimized to a range where also sensitivity to variations in the material properties is minimized.

Abstract: The invention relates to a method for monitoring the condition of a medium in a channel, based on the transmission/emission of light, in which a light at a set wavelength is conducted through a medium layer defined by a measuring gap in a measuring head pushed in from an opening in the wall of the channel the intensity of the light passed through medium layer, or a variable proportional to it is measured, and the condition of the medium is evaluated, using measuring electronics, from the change of the intensity, according to established criteria. In the method, the wavelength of light used is such that the resolution of the aging phenomenon of the medium being monitored is optimal and the relationship of the temperature dependence of the medium to the measuring variable is taken into account. In addition, the invention also relates to a corresponding device.

Abstract: The invention relates to a method for monitoring the condition of a medium, based on the transmission/emission of light in a channel, in which a light is conducted through a medium layer defined by a measuring gap in a measuring head pushed in from an opening in the wall of the channel, the intensity of the light, or a variable proportional to it is measured through the medium layer, and the condition of the medium is evaluated, using measuring electronics, from the intensity of the change, according to set criteria. The measurement is performed using a sensor with a compact measuring head, in which the measuring electronics are essentially outside the channel, and in which the light is conducted to the measuring gap and away from the measuring gap by optical-fibre means. In addition, the invention also relates to a corresponding device.