Abstract: The invention provides a quantum dot (QD) modified optical fiber-based biosensor which characterizes matrix metalloproteinase (MMP) enzyme activity at pain signaling sites in the central nervous system (CNS) in vivo. Related systems and peptide biomarker screening methods are also provided.

Abstract: Method and apparatus embody a rotation sensor including one or more ring lasers designed to utilize a nonlinear Sagnac effect, a passive waveguide arrangement, and a photodetector arrangement to receive the outcoupled light and to detect rotation of the sensor; wherein these components are arranged into a monolithically integrated optoelectronic integrated circuit on a single substrate. The method and apparatus can include seeding a stable, rotation-insensitive, strong (driving) wave using a single-frequency edge emitting laser monolithically integrated on the same substrate.

Abstract: A thermal neutron detector and method employ Gd-containing nanoscintillators. Thermal neutron radiation is detected by observing scintillation events from the nanoscintillators.

Abstract: The invention provides a semiconductor light-emitting device having a monolithically integrated master laser, such as a distributed-Bragg-reflector (DBR) master laser, and injection-locked ring slave laser with modulated photon lifetime for optical communication beyond 100 GHz.

Abstract: A neutron irradiation history sensor and detection method for detection of thermal neutrons exploit transmutation of 164Dy into 165Ho and 166Er and significant differences in optical properties of Dy, Ho, and Er in order to enable detection of relative fractions of Dy, Ho, and Er and thus the degree and timing of prior thermal neutron exposure that has occurred, providing a tamper-proof forensic record of the prior thermal neutron exposure. The irradiation history sensor and detection method advantageously employ Dy-containing nanocrytals (NCs) residing in a transparent host.

Abstract: A neutron irradiation history sensor and detection method for detection of thermal neutrons exploit transmutation of 164Dy into 165Ho and 166Er and significant differences in optical properties of Dy, Ho, and Er in order to enable detection of relative fractions of Dy, Ho, and Er and thus the degree and timing of prior thermal neutron exposure that has occurred, providing a tamper-proof forensic record of the prior thermal neutron exposure. The irradiation history sensor and detection method advantageously employ Dy-containing nanocrytals (NCs) residing in a transparent host.

Abstract: A heterogeneous scintillator material is provided comprising core/shell nanoparticles having a highly hygroscopic or deliquescent halide-based core activated with trivalent Ln3+ or divalent Ln2+ lanthanide ions (Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu) and a stable non-hygroscopic shell thereon. The heterogeneous nanoparticles can comprise highly hygroscopic lanthanide halide (LaBr3, LuI3) cores protected with stable non-hygroscopic LaF3 shells. The heterogeneous nanoparticles can comprise deliquescent alkaline earth halide (SrI2, BaI2) cores protected with stable non-hygroscopic (SrF2, BaF2) shells.

Abstract: Scintillator material comprising nanoparticles (nanocrystals) comprising lead (Pb), iodine (I), and optionally one or both of oxygen (O) and hydrogen (H) wherein the nanoparticles exhibit room-temperature scintillation under gamma irradiation. The scintillator nanoparticles can comprise Pb3O2I2. The scintillator nanoparticles can comprise PbIOH in generally equiatomic proportions or non-equiatomic variants thereof that exhibit scintillation under gamma irradiation. The scintillator nanoparticles have a particle dimension in the range of about 5 to about 100 nm. Microparticles (microcrystals) also are provided comprising lead (Pb), iodine (I), and optionally one or both of oxygen (O) and hydrogen (H) grown in a nanoparticle colloidal solution over time to a particle dimension greater than 0.1 ?m, such as about 2 microns.

Abstract: A thermal neutron detector and method employ Gd-containing nanoscintillators. Thermal neutron radiation is detected by observing scintillation events from the nanoscintillators.

Abstract: Photocatalytic water splitting is employed as a method to directly obtain clean hydrogen from solar radiation by using hybrid nanoparticles with metallic cores and semiconductor photocatalytic shells. Efficient unassisted overall photocatalytic splitting of water is based on resonant absorption from surface plasmon in metal core/semiconductor shell hybrid nanoparticles, which can extend the absorption spectra further towards the visible-near infrared range, thus dramatically increasing the solar energy conversion efficiency. When used in combination with scintillator nanoparticles, the hybrid photocatalytic nanoparticles can be used for conversion of nuclear energy into hydrogen.

Abstract: A semiconductor ring laser (SRL) section is monolithically integrated with a DFB or DBR master laser section on a semiconductor substrate of a light-emitting device to provide an injection locking mode of operation that can result in low-cost ultrafast (over 100 GHz) functional chip that will be easy to use in practice.

Abstract: Scintillator material comprising nanoparticles (nanocrystals) comprising lead (Pb), iodine (I), and optionally one or both of oxygen (O) and hydrogen (H) wherein the nanoparticles exhibit room-temperature scintillation under gamma irradiation. The scintillator nanoparticles can comprise Pb3O2I2. The scintillator nanoparticles can comprise PbIOH in generally equiatomic proportions or non-equiatomic variants thereof that exhibit scintillation under gamma irradiation. The scintillator nanoparticles have a particle dimension in the range of about 5 to about 100 nm. Microparticles (microcrystals) also are provided comprising lead (Pb), iodine (I), and optionally one or both of oxygen (O) and hydrogen (H) grown in a nanoparticle colloidal solution over time to a particle dimension greater than 0.1 ?m, such as about 2 microns.

Abstract: A semiconductor ring laser (SRL) section is monolithically integrated with a DFB or DBR master laser section on a semiconductor substrate of a light-emitting device to provide an injection locking mode of operation that can result in low-cost ultrafast (over 100 GHz) functional chip that will be easy to use in practice.

Abstract: A unidirectional semiconductor ring laser (USRL) section is monolithically integrated with a DFB or DBR master laser section on a semiconductor substrate of a light-emitting device to provide an injection locking mode of operation that can result in low-cost ultrafast (over 100 GHz) functional chip that will be easy to use in practice.

Abstract: Scintillator material comprising nanoparticles (nanocrystals) comprising lead (Pb), iodine (I), and optionally one or both of oxygen (O) and hydrogen (H) wherein the nanoparticles exhibit room-temperature scintillation under gamma irradiation. The scintillator nanoparticles can comprise Pb3O2I2. The scintillator nanoparticles can comprise PbIOH in generally equiatomic proportions or non-equiatomic variants thereof that exhibit scintillation under gamma irradiation. The scintillator nanoparticles have a particle dimension in the range of about 5 to about 100 nm. Microparticles (microcrystals) also are provided comprising lead (Pb), iodine (I), and optionally one or both of oxygen (O) and hydrogen (H) grown in a nanoparticle colloidal solution over time to a particle dimension greater than 0.1 ?m, such as about 2 microns.

Abstract: Active multifunctional nanoparticles provide significant enhancement of the efficacy of model therapeutic and gene agents due to increased diffusion and penetration through mucus and biological barriers under the influence of a magnetic field.

Abstract: A monolithically integrated semiconductor laser rotation sensor/gyroscope that includes at least two isolated, nonsynchronized semiconductor lasers; at least one being unidirectional and at least a further one being either a straight-line laser or a second unidirectional ring laser configured to propagate lasing light waves in the direction opposite to the first unidirectional ring laser; semiconductor directional waveguide couplers; a semiconductor Y-junction mixing region; and a semiconductor photodetector. Evanescently outcoupled signals are routed to a photodetector for detection of the Sagnac shifted frequencies to discern a beat frequency resulting from rotation of the chip structure. The straight-line semiconductor laser serves as frequency reference insensitive to rotation. Directing, filtering, and radiating unwanted reflections or backscattered light to highly absorbing regions is carried out with waveguide coupler designs and nonreciprocal couplers and filters.

Abstract: The present invention provides a unipolar semiconductor structure comprising: at least one active layer comprising at least one group III-nitride; and at two barrier layers disposed on either side of the active layer, each of the two barrier layers comprising at least one group

Abstract: A monolithically integrated semiconductor laser rotation sensor/gyroscope that includes at least two isolated, nonsynchronized semiconductor lasers; at least one being unidirectional and at least a further one being either a straight-line laser or a second unidirectional ring laser configured to propagate lasing light waves in the direction opposite to the first unidirectional ring laser; semiconductor directional waveguide couplers; a semiconductor Y-junction mixing region; and a semiconductor photodetector. Evanescently outcoupled signals are routed to a photodetector for detection of the Sagnac shifted frequencies to discern a beat frequency resulting from rotation of the chip structure. The straight-line semiconductor laser serves as frequency reference insensitive to rotation. Directing, filtering, and radiating unwanted reflections or backscattered light to highly absorbing regions is carried out with waveguide coupler designs and nonreciprocal couplers and filters.

Abstract: The present invention provides a coherent light-generating semiconductor structure comprising: at least one active region including a pumped portion for achieving optical gain; a first optical waveguide for confining light waves in the transverse direction and for propagating light waves along the optical axis of said first optical waveguide; first and second reflective means, the first and second reflective means being spaced apart from one another and defining a resonant optical cavity therebetween, the pumped portion of the at least one active region being located at least partially within the resonant optical cavity, and the resonant optical cavity encompassing at least a portion of the optical waveguide; the active region, the optical waveguide, and the resonant optical cavity having properties necessary to establish and maintain a principal optical mode; a grating located in at least a portion of the resonant optical cavity, the grating having grating teeth oriented at an angle relative to the first and