Patents by Inventor Mari Hodate

Mari Hodate has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5518940
    Abstract: A method of manufacturing a semiconductor device according to the present invention includes a process of introducing impurities into a semiconductor layer with a gate electrode and a resist film as a mask after a resist film is formed on the top and the side of the gate electrode by soaking the gate electrode on a semiconductor layer in an electrolyte containing resist and applying voltage to the gate electrode.
    Type: Grant
    Filed: January 5, 1995
    Date of Patent: May 21, 1996
    Assignee: Fujitsu Limited
    Inventors: Mari Hodate, Norihisa Matsumoto, Kohji Ohgata, Tamotsu Wada, Ken-iti Yanai, Ken-ichi Oki, Yasuyoshi Mishima, Michiko Takei, Tatsuya Kakehi, Masahiro Okabe
  • Patent number: 5480818
    Abstract: A crystal silicon film deposited on an insulating film made of a binary system material or a binary system semiconductor film formed by an atomic layer deposition method has a grain as large as approximately 200 nm. Thus, the mobility of carriers is increased. The crystal silicon thereof is grown within a temperature range of 250.degree. C. to 400.degree. C. Accordingly, when a planar type thin film transistor, an inverted stagger type thin film transistor or a stagger type thin film transistor is formed using crystal silicon formed on these films made of a binary system material, transistor characteristics thereof are improved.
    Type: Grant
    Filed: February 9, 1993
    Date of Patent: January 2, 1996
    Assignee: Fujitsu Limited
    Inventors: Tomotaka Matsumoto, Jun Inoue, Teruhiko Ichimura, Yuji Murata, Junichi Watanabe, Yoshio Nagahiro, Mari Hodate, Kenichi Oki, Masahiro Okabe