Patents by Inventor Mari USUI

Mari USUI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etchant and etching process for oxides containing at least indium and gallium
    Patent number: 9217106
    Abstract: The present invention relates to an etchant and an etching process, which are preferred for use in etching of oxides containing at least indium and gallium, such as an oxide consisting of indium, gallium and oxygen or an oxide consisting of indium, gallium, zinc and oxygen. According to preferred embodiments of the present invention, an etchant comprising sulfuric acid or a salt thereof and a carboxylic acid (except for oxalic acid) or a salt thereof ensures a preferred etching rate, a good residue removal property and low corrosiveness to wiring materials when used in etching of oxides containing at least indium and gallium. Moreover, this etchant not only causes no precipitate but also retains a preferred etching rate even when the concentration of oxides dissolved in the etchant is elevated.
    Type: Grant
    Filed: November 19, 2013
    Date of Patent: December 22, 2015
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Hidenori Takeuchi, Kunio Yube, Satoshi Okabe, Mari Usui
  • ETCHANT AND ETCHING PROCESS FOR OXIDES CONTAINING AT LEAST INDIUM AND GALLIUM
    Publication number: 20140186996
    Abstract: The present invention relates to an etchant and an etching process, which are preferred for use in etching of oxides containing at least indium and gallium, such as an oxide consisting of indium, gallium and oxygen or an oxide consisting of indium, gallium, zinc and oxygen. According to preferred embodiments of the present invention, an etchant comprising sulfuric acid or a salt thereof and a carboxylic acid (except for oxalic acid) or a salt thereof ensures a preferred etching rate, a good residue removal property and low corrosiveness to wiring materials when used in etching of oxides containing at least indium and gallium. Moreover, this etchant not only causes no precipitate but also retains a preferred etching rate even when the concentration of oxides dissolved in the etchant is elevated.
    Type: Application
    Filed: November 19, 2013
    Publication date: July 3, 2014
    Applicant: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Hidenori TAKEUCHI, Kunio YUBE, Satoshi OKABE, Mari USUI