Patents by Inventor Maria Heidenblut

Maria Heidenblut has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CHIP WITH CRACK GUIDING STRUCTURE COMBINED WITH CRACK STOP STRUCTURE
    Publication number: 20240145408
    Abstract: An electronic chip is disclosed. In one example, the electronic chip comprises a substrate comprising a central portion and an edge portion around at least part of the central portion. An active region is arranged in the central portion. A crack guiding structure combined with a crack stop structure is provided, both being arranged in the edge portion.
    Type: Application
    Filed: October 11, 2023
    Publication date: May 2, 2024
    Applicant: Infineon Technologies AG
    Inventors: Maria HEIDENBLUT, Michael GOROLL, Stefan KAISER, Sergey ANANIEV, Sabine BOGUTH, Gunther MACKH, Andreas BAUER, Georg Michael REUTHER
  • SEMICONDUCTOR CHIP HAVING A CRACK STOP STRUCTURE
    Publication number: 20220270985
    Abstract: A semiconductor chip having a crack stop structure is disclosed. The crack stop structure includes one or more recesses formed in the semiconductor chip. The one or more recesses extend adjacent to and along a periphery of the semiconductor chip. The one or more recesses are filled with a metal material. The metal material has an intrinsic tensile stress at room temperature that induces compressive stress in at least a region of the periphery of the semiconductor chip.
    Type: Application
    Filed: January 24, 2022
    Publication date: August 25, 2022
    Inventors: Sergey Ananiev, Andreas Bauer, Michael Goroll, Maria Heidenblut, Stefan Kaiser, Gunther Mackh, Kabula Mutamba, Reinhard Pufall, Georg Reuther
  • Wafer and method for processing a wafer
    Patent number: 10600701
    Abstract: A wafer in accordance with various embodiments may include: at least one metallization structure including at least one opening; and at least one separation line region along which the wafer is to be diced, wherein the at least one separation line region intersects the at least one opening.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: March 24, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Gunther Mackh, Gerhard Leschik, Maria Heidenblut
  • WAFER AND METHOD FOR PROCESSING A WAFER
    Publication number: 20180374766
    Abstract: A wafer in accordance with various embodiments may include: at least one metallization structure including at least one opening; and at least one separation line region along which the wafer is to be diced, wherein the at least one separation line region intersects the at least one opening.
    Type: Application
    Filed: September 4, 2018
    Publication date: December 27, 2018
    Inventors: Gunther Mackh, Gerhard Leschik, Maria Heidenblut
  • Wafer and method for processing a wafer
    Patent number: 10090214
    Abstract: A wafer in accordance with various embodiments may include: at least one metallization structure including at least one opening; and at least one separation line region along which the wafer is to be diced, wherein the at least one separation line region intersects the at least one opening.
    Type: Grant
    Filed: October 15, 2012
    Date of Patent: October 2, 2018
    Assignee: Infineon Technologies AG
    Inventors: Gunther Mackh, Gerhard Leschik, Maria Heidenblut
  • Singulation processes
    Patent number: 9040389
    Abstract: In one embodiment, a method of forming a semiconductor device comprises forming a groove on and/or over a first side of a substrate. A dicing layer is formed from a second side of the substrate using a laser process. The second side is opposite the first side. The dicing layer is disposed under the groove within the substrate. The substrate is singulated through the dicing layer.
    Type: Grant
    Filed: October 9, 2012
    Date of Patent: May 26, 2015
    Assignee: Infineon Technologies AG
    Inventors: Gunther Mackh, Maria Heidenblut, Adolf Koller, Anatoly Sotnikov
  • WAFER AND METHOD FOR PROCESSING A WAFER
    Publication number: 20140103495
    Abstract: A wafer in accordance with various embodiments may include: at least one metallization structure including at least one opening; and at least one separation line region along which the wafer is to be diced, wherein the at least one separation line region intersects the at least one opening.
    Type: Application
    Filed: October 15, 2012
    Publication date: April 17, 2014
    Applicant: Infineon Technologies AG
    Inventors: Gunther Mackh, Gerhard Leschik, Maria Heidenblut
  • Singulation Processes
    Publication number: 20140099777
    Abstract: In one embodiment, a method of forming a semiconductor device comprises forming a groove on and/or over a first side of a substrate. A dicing layer is formed from a second side of the substrate using a laser process. The second side is opposite the first side. The dicing layer is disposed under the groove within the substrate. The substrate is singulated through the dicing layer.
    Type: Application
    Filed: October 9, 2012
    Publication date: April 10, 2014
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Gunther Mackh, Maria Heidenblut, Adolf Koller, Anatoly Sotnikov
  • Method of etching a material surface
    Patent number: 8183156
    Abstract: Disclosed is a method of structuring a material surface by dry etching, so that a passivation layer soluble in a solvent forms by the dry etching on parts of the structured material surface, sealing the passivation layer with a substance soluble in the solvent, and removing the sealed passivation layer and the substance by means of the solvent.
    Type: Grant
    Filed: June 6, 2008
    Date of Patent: May 22, 2012
    Assignee: Infineon Technologies AG
    Inventors: Maria Heidenblut, Raimund Foerg, Walter Preis
  • Method of Etching a Material Surface
    Publication number: 20090305510
    Abstract: Disclosed is a method of structuring a material surface by dry etching, so that a passivation layer soluble in a solvent forms by the dry etching on parts of the structured material surface, sealing the passivation layer with a substance soluble in the solvent, and removing the sealed passivation layer and the substance by means of the solvent.
    Type: Application
    Filed: June 6, 2008
    Publication date: December 10, 2009
    Inventors: Maria Heidenblut, Raimund Foerg, Walter Preis