Abstract: A mirror device may be simultaneously used for display purposes, based on e.g. an LCD display with a polarizing mirror placed in front of it. The polarizing mirror has the characteristics that it does not disturb the transmission of the light from the display to the viewer, but does reflect the incident light.

Abstract: A method of manufacturing an electroluminescent device comprising forming a pattern, depositing a liquid, and processing the liquid to form an electroluminescent region. The pattern includes an overhanging structure with a negatively-sloped section thereunder and a functional region bounded on at least one side by a positively-sloped section. The overhanging structure is on a side of the positively-sloped section that is opposite the functional region. The liquid is suitable for forming a functional layer within the functional region such that the liquid contacts the a positively-sloped surface of the positively-sloped sections. The positively-sloped sections have a shape and size such that at least some of the liquid is prevented from reaching the negatively-sloped section and being taken up by a capillary channel of the negatively-sloped section.

Abstract: An electroluminescent device (1) has a relief pattern (17) comprising overhanging sections (13) for patterning an electrode layer (11) of the device (1). In order to prevent the take up and transport of fluid, from which a functional layer (7, 9) is obtainable, along the capillary channels (23) formed by the overhanging sections (13), the relief pattern (17) comprises accompanying sections (15) which are positioned at distance of the overhanging sections (13) and between the sections (13) and the electroluminescent areas (21) comprising the functional layers (7, 9). A method of manufacturing the EL device (1) comprises depositing the functional layer or layers (7, 9) by means of a wet deposition method such as inkjet printing.

Abstract: An organic electroluminescent device (41) has a plurality of independently addressable electroluminescent elements (51A, B, C, D, E, F) and comprises a patterned first electrode layer comprising a plurality of first electrodes (43A, B, C) and a second electrode layer (26A, B, C, D); an organic, optionally patterned, electroluminescent layer (25) disposed between said first and said second electrode layer; an organic charge transport layer having charge transport areas (24A, B, C, D, E, F) disposed between the first electrode layer and the organic electroluminescent layer (25); and a relief pattern (27) extending between and along neighboring first electrodes. The relief pattern separates said charge transport areas along neighboring first electrodes which has the effect of disconnecting any current path between neighboring first electrodes via the charge transport layer. Thus, the EL device has a small leakage current and can be easily manufactured.

Abstract: An electroluminescent device (1) has a relief pattern (17) comprising overhanging sections (13) for patterning an electrode layer (11) of the device (1). In order to prevent the take up and transport of fluid, from which a functional layer (7, 9) is obtainable, along the capillary channels (23) formed by the overhanging sections (13), the relief pattern (17) comprises accompanying sections (15) which are positioned at distance of the overhanging sections (13) and between the sections (13) and the electroluminescent areas (21) comprising the functional layers (7, 9). A method of manufacturing the EL device (1) comprises depositing the functional layer or layers (7, 9) by means of a wet deposition method such as inkjet printing.

Abstract: A semiconductor device 1 comprises a body 2 of insulating material having a surface 3 to which a semiconductor element 4 and an interconnect structure 5 are fastened, which interconnect structure 5 is disposed between the semiconductor element 4 and the body 2 of insulating material and has a patterned metal layer 7 facing the body 2 of insulating material, which patterned metal layer 7 comprises conductor tracks 8 and 9. In order to reduce the power consumption of the semiconductor device 1, an insulating layer 12 having a dielectric constant ∈r below 3 is disposed between the patterned metal layer 7 of the interconnect structure 5 and the body 2 of insulating material, and an insulating barrier layer 13 is disposed between the semiconductor element 4 and the insulating layer 12 having a dielectric constant ∈r below 3, so as to counteract that contaminants from the insulating layer 12 having a dielectric constant ∈r below 3 can reach the semiconductor element 4.