Patents by Inventor Maria L. Peterson
Maria L. Peterson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240178918Abstract: A method for encoding data in a datacenter is provided that includes obtaining data to be encoded, encoding the data to a set of encoded spatiotemporal patterns, and outputting the set of encoded spatiotemporal patterns.Type: ApplicationFiled: November 30, 2022Publication date: May 30, 2024Inventors: Winston Allen SAUNDERS, Maria Leena Kyllikki VIITANIEMI, Teresa A. NICK, Nicholas Andrew KEEHN, Christian L. BELADY, Eric C. PETERSON
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Publication number: 20240176976Abstract: A method for encoding data in a datacenter is provided that includes obtaining data to be encoded, encoding the data to a set of encoded spatiotemporal patterns, and outputting the set of encoded spatiotemporal patterns.Type: ApplicationFiled: November 30, 2022Publication date: May 30, 2024Inventors: Winston Allen SAUNDERS, Maria Leena Kyllikki VIITANIEMI, Teresa A. NICK, Nicholas Andrew KEEHN, Christian L. BELADY, Eric C. PETERSON
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Publication number: 20240179402Abstract: A system may include a first node having a first display device configured to display a first spatiotemporal pattern. A system may include a second node having a second display device configured to display a second spatiotemporal pattern. A system may include a camera. A system may include a means for selectively imaging one of the first spatiotemporal pattern and the second spatiotemporal pattern with the camera.Type: ApplicationFiled: December 15, 2023Publication date: May 30, 2024Inventors: Teresa A. NICK, Winston Allen SAUNDERS, Maria Leena Kyllikki VIITANIEMI, Nicholas Andrew KEEHN, Eric C. PETERSON, Christian L. BELADY
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Patent number: 7314823Abstract: A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material.Type: GrantFiled: August 2, 2005Date of Patent: January 1, 2008Assignee: DuPont Airproducts NanoMaterials LLCInventors: Robert J. Small, Laurence McGhee, David J. Maloney, Maria L. Peterson
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Patent number: 7276180Abstract: A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material.Type: GrantFiled: March 27, 2003Date of Patent: October 2, 2007Assignee: DuPont Air Products NanoMaterials LLCInventors: Robert J. Small, Laurence McGhee, David J. Maloney, Maria L. Peterson
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Patent number: 7033942Abstract: A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material.Type: GrantFiled: October 10, 2003Date of Patent: April 25, 2006Assignee: DuPont Air Products NanoMaterials L.L.C.Inventors: Robert J. Small, Laurence McGhee, David J. Maloney, Maria L. Peterson
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Publication number: 20040072439Abstract: A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material.Type: ApplicationFiled: October 10, 2003Publication date: April 15, 2004Applicant: EKC Technology, Inc.Inventors: Robert J, Small, Laurence McGhee, David J. Maloney, Maria L. Peterson
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Patent number: 6635186Abstract: A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material.Type: GrantFiled: January 7, 1999Date of Patent: October 21, 2003Assignee: EKC Technology, Inc.Inventors: Robert J. Small, Laurence McGhee, David J. Maloney, Maria L. Peterson
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Publication number: 20030176068Abstract: A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material.Type: ApplicationFiled: March 27, 2003Publication date: September 18, 2003Applicant: EKC Technology, Inc.Inventors: Robert J. Small, Laurence McGhee, David J. Maloney, Maria L. Peterson
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Publication number: 20020111024Abstract: A composition for chemical mechanical polishing that includes a slurry is described. A sufficient amount of a selectively oxidizing and reducing compound is provided to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of a metal and a dielectric material. A composition may include an effective amount of an hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, and a peracetic acid or periodic acid. A method for chemical mechanical polishing is described which includes applying a slurry that includes the composition to a surface to produce mechanical removal of the metal and dielectric material.Type: ApplicationFiled: November 6, 2001Publication date: August 15, 2002Inventors: Robert J. Small, Laurence McGhee, David J. Maloney, Maria L. Peterson
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Patent number: 6313039Abstract: A composition for chemical mechanical polishing that includes a slurry is described. A sufficient amount of a selectively oxidizing and reducing compound is provided to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of a metal and a dielectric material. A composition may include an effective amount of an hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, and a peracetic acid or periodic acid. A method for chemical mechanical polishing is described which includes applying a slurry that includes the composition to a surface to produce mechanical removal of the metal and dielectric material.Type: GrantFiled: January 11, 2000Date of Patent: November 6, 2001Assignee: EKC Technology, Inc.Inventors: Robert J. Small, Laurence McGhee, David J. Maloney, Maria L. Peterson
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Patent number: 6117783Abstract: A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material.Type: GrantFiled: March 23, 1998Date of Patent: September 12, 2000Assignee: EKC Technology, Inc.Inventors: Robert J. Small, Laurence McGhee, David J. Maloney, Maria L. Peterson