Abstract: The present invention discloses a method and apparatus for molding a fibrous molded article. An aqueous slurry that contains an amount of water and a plurality of fibers is added to the molding apparatus. First and second molding screens are positioned on a first pressing unit and a second pressing unit, respectively, and include a plurality of openings. The first and second molding screens can include secondary relief features. A pressing chamber sleeve slidably engages with the first pressing unit and the second pressing unit to ensure proper alignment during molding operation. The first and second molding screens at least partially form a void that is intended to receive an amount of the aqueous slurry. The apparatus includes a heat and pressure source that removes at least some of the water from the aqueous slurry and bonds the fibers to one another resulting in the fibrous molded article.

Abstract: The present invention is a method for forming a fibrous molded article that includes providing a aqueous slurry containing a plurality of fibers, providing the slurry into a dehydration chamber to remove at least some of the amount of water from the slurry to achieve an intermediate form, removing the fibrous intermediate form from the dehydration chamber and placing the fibrous intermediate form in a press having a first mold portion and a second mold portion wherein at least one of the first or second mold portions includes a contour, applying at least one of heat and pressure to the press such that at least fiber to fiber bonding or chemical cross-linking of fibers occurs, and removing the three-dimensional solid fibrous molded part from the press.

Abstract: The present invention discloses a molded article having a surface feature created by a light reactive agent interacting with light from a light source, and a method for making the same. The article is molded from a slurry comprised of an aqueous solution that includes a plurality of fibers and a light reactive agent. The slurry is molded into a three-dimensional solid fibrous molded part. The solid fibrous molded part is exposed to a light source such that the light reacts with the light reactive agent to create at least one surface feature. The surface feature can be, for example, a texture or a color change.

Abstract: An embodiment of a method for manufacturing an integrated circuit formed on a semiconductor substrate comprising the steps of: forming at least one shielding structure on said semiconductor substrate, forming a protective layer at least on portions of the semiconductor substrate that surround said shielding structure, carrying out a ionic implantation step with a tilt angle with respect to a normal to a plane defined by said semiconductor substrate so that said at least one shielding structure shields first portions of the protective layer, removing second portions of the protective layer that have been subjected to the ionic implant.

Abstract: A process for manufacturing a phase change memory array includes the steps of: forming a plurality of phase change memory cells in an array region of a semiconductor wafer, the phase change memory cells arranged in rows and columns according to a row direction and to a column direction, respectively; forming a control circuit in a control region of the semiconductor wafer; forming a plurality of first bit line portions for mutually connecting phase change memory cells arranged on a same column; forming first level electrical interconnection structures; and forming second level electrical interconnection structures above the first level electrical interconnection structures. The first level electrical interconnection structures include second bit line portions laying on and in contact with the first bit line portions and projecting from the first bit line portions in the column direction for connecting the first bit line portions to the control circuit.

Abstract: A method for depositing a chalcogenide layer in a phase change memory, whereby a chalcogenide layer is deposited by physical vapor deposition in a deposition chamber, having a collimator. The collimator is formed by a holed disk arranged in a deposition area delimited by the chamber walls and the chamber cover. The target is biased by a pulsed voltage to avoid charging and arching. The method is used to manufacture a phase change memory cell, whereby a resistive heater element is formed in a dielectric layer, a mold layer is formed over the dielectric layer; an aperture is formed in the mold layer over the resistive heater element; a chalcogenide layer is conformally deposited in the aperture to define a phase change portion; and a select element is formed in electrical contact with the phase change portion.

Abstract: A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.

Abstract: A process for manufacturing a memory having a plurality of memory cells includes the steps of forming a well (having a first type of conductivity) within a wafer of semiconductor material, defining active regions within the well extending in a first direction, forming memory cells within the active regions (each memory cell having a source region with a second type of conductivity opposite to the first type of conductivity), and forming lines of electrical contact which electrically contact source regions aligned in a second direction. The step of forming lines of electrical contact includes forming an electrical contact between the source regions and portions of the well adjacent thereto in the second direction.

Abstract: A vertical-current-flow resistive element includes a monolithic region having a first portion and a second portion arranged on top of one another and formed from a single material. The first portion has a first resistivity, and the second portion has a second resistivity, lower than the first resistivity. To this aim, a monolithic region with a uniform resistivity and a height greater than at least one of the other dimensions is first formed; then the resistivity of the first portion is increased by introducing, from the top, species that form a prevalently covalent bond with the conductive material of the monolithic region, so that the concentration of said species becomes higher in the first portion than in the second portion. Preferably, the conductive material is a binary or ternary alloy, chosen from among TiAl, TiSi, TiSi2, Ta, WSi, and the increase in resistivity is obtained by nitridation.