Abstract: A slurry containing abrasive particles and a dual-valent rare earth ion or suspension of its colloidal hydroxide is especially useful for polishing surfaces, including those used in microelectronics. A suspension of a colloidal dual-valent rare earth hydroxide is especially useful for polishing silica.

Abstract: A method of forming metal lines in a patterned dielectric layer. First, a thin (50 .ANG.-500 .ANG.) metal layer of a group VB metal, preferably niobium, is formed on a patterned dielectric layer. Next, an aluminum layer or an aluminum alloy layer is formed on the thin niobium layer. The aluminum layer is preferably formed by depositing a first thickness of collimated aluminum at low temperature followed by high temperature deposition of an equal thickness of aluminum. The aluminum layer is Chem-Mech polished (CMP) with an oxidizing acidic colloidal alumina slurry to expose and oxidize the thin niobium liner which acts as a polish stop. Then, the exposed thin niobium liner is removed using CMP. Alternatively, instead of niobium, the liner may be a thin layer of a group VB metal or an alloy thereof.

Abstract: The method of polishing metal layers on wafers comprises the steps of: providing indicator areas on said wafer, said indicator areas having combinations of line widths and pattern factors violating existing ground rules of metal lines thereby said indicator areas being dished out during said polishing using a chemical-mechanical polisher to polish the metal layers to remove material therefrom, inspecting indicator areas on the wafer to determine an amount of material removed from said areas, and adjusting the operation of the chemical-mechanical polisher in response to the inspection of the indicator areas. The indicator areas may include macroblocks comprised of a multitude of individual blocks. The wafer may be inspected by optically identifying the polishing state of to blocks in the macroblock. Additionally, the process may be automated for mass production.

Abstract: A surface such as that of a semiconductor wafer is cleaned by contacting the surface with a cleaning composition containing a polyelectrolyte.

Abstract: A slurry containing abrasive particles and exhibiting normal stress effects. The slurry further contains non-polishing particles resulting in reduced polishing rate at recesses, while the abrasive particles maintain high polish rates at elevations. This leads to improved planarization.

Abstract: A method of chemically polishing aluminum from a semiconductor wafer to leave a wiring pattern thereon. The surface of the aluminum in aqueous environment consists of hydrated alumina; upon contact with the hydrated silica particles of a polishing slurry at neutral pH, the surface alumina is transferred to the surface of the silica by aluminosilicate formation removing the alumina layer by layer by contact chemical reaction. Wafers thus polished have nearly scratch-free and corrosion-free polished aluminum lines in an insulator surface.

Abstract: One or more monolayers of cerium arrayed on the surface of a niobium metal acts as a catalyst to oxidation of the niobium at ambient temperature and results in a very thin, very high quality insulating layer which may be configured by patterning of the catalyst. Significant amounts of Nb.sub.2 O.sub.5 are formed at pressures as low as 6.6.times.10.sup.-6 Pa, promoted by the presence of the cerium. This catalytic activity is related to the trivalent to tetravalent valence change of the cerium during oxidation. The kinetics of Nb.sub.2 O.sub.5 formation beneath the oxidized cerium shows two stages:the first stage is fast growth limited by ion diffusion;the second stage is slow growth limited by electron tunneling.Other catalytic rare earths usable instead of cerium are terbium and praseodymium; other substrate materials usable instead of niobium are aluminum, hafnium, silicon and tantalum, or oxidizable alloys thereof.