Abstract: A component for use in a high vacuum environment, the component including a core of non-magnetic Hastelloy with a cladding of nickel-iron covering the core at least in part. The component can be, for example, at least one of a gate valve for use in a high vacuum environment of an electron gun, a bearing, a slide way, a gate valve bearing, a rotary slide, a linear slide, an electron beam column, and electron beam chamber, and a vacuum chamber. In this manner, because the final mechanical tolerance is controlled by machining instead of part assembling, extremely high alignment accuracy is obtained. The final part provides field shielding as provided by the nickel alloy shell, low stray field provided by the non-magnetic Hastelloy, good vacuum performance, and tight mechanical tolerance control. Also, because Hastelloy has the advantage of a low oxidation rate in comparison to stainless steel and titanium, there is less contamination buildup due to conditions such as electron beam bombardment.

Abstract: An apparatus for generating a dual-energy electron beam. The apparatus includes a first electron beam source configured to generate a lower-energy electron beam, and a second electron beam source configured to generate a higher-energy electron beam. The apparatus further includes a combining device for forming the dual-energy electron beam by combining the lower-energy and higher-energy electron beams. In addition, a first controllable electron-beam deflector is configured to provide a controllable offset of a first area illuminated by the lower-energy electron beam in relation to an image data collection area, and a second controllable electron-beam deflector configured to provide a controllable offset of a second area illuminated by the higher-energy electron beam in relation to the image data collection area. A moving stage and a time delay integration detection system are utilized. Other embodiments, aspects and features are also disclosed.

Abstract: An electron gun of the type having an electron emitter for emitting electrons, including an electrostatic lens and a magnetic lens formed by pole pieces with a winding coil disposed between the magnetic pole pieces. The magnetic lens forms a rotationally symmetrical magnetic field in a gap formed by the pole pieces. The magnetic field forms the magnetic lens and focuses the electrons emitted from the emitter. A vacuum tube separates the electron gun from the magnetic lens. The electron gun is sealed in a vacuum by the vacuum tube and the magnetic lens is shielded in air.

Abstract: One embodiment disclosed relates to a reflective electron patterning device. The device includes a pattern on a surface. There is an electron reflective portion of the pattern and an electron non-reflective portion of the pattern. Another embodiment disclosed relates to a method of reflecting a pattern of electrons. An electron beam is generated to be incident upon a surface. The pattern is formed on the surface. The incident electrons are reflected from a reflective portion of the pattern are prevented from being reflected from a non-reflective portion of the pattern.

Abstract: One embodiment pertains to an apparatus for reflection electron beam lithography, including at least illumination electron-optics, an electron-reflective pattern generator, projection electron-optics, a moving stage holding a target substrate, control circuitry, and a deflection system. The illumination electron-optics is configured to form an illumination electron beam. The electron-reflective pattern generator configured to generate an electron-reflective pattern of pixels and to reflect the illumination electron beam using the pattern to form a patterned electron beam. The projection electron-optics is configured to project the patterned electron beam onto the moving target substrate. The control circuitry is configured to shift the generated pattern in discrete steps in synchronization with the stage motion. The deflection system is configured to deflect said projected patterned electron beam so as to compensate for said stage motion in between discrete shifts of said generated pattern.

Abstract: One embodiment relates to an apparatus for inspecting a substrate using charged particles. The apparatus includes an illumination subsystem, an objective subsystem, a projection subsystem, and a beam separator interconnecting those subsystems. The apparatus further includes a detection system which includes a scintillating screen, a detector array, and an optical coupling apparatus positioned therebetween. The optical coupling apparatus includes both refractive and reflective elements. Other embodiments and features are also disclosed.

Abstract: One embodiment relates to a method of inspecting a substrate using electrons. Mirror-mode electron-beam imaging is performed on a region of the substrate at multiple voltage differences between an electron source and a substrate, and image data is stored corresponding to the multiple voltage differences. A calculation is made of a measure of variation of an imaged aspect of a feature in the region with respect to the voltage difference between the electron source and the substrate. Other embodiments and features are also disclosed.

Abstract: Systems, control subsystems, and methods for projecting an electron beam onto a specimen are provided. One system includes a stage configured to move the specimen with a non-uniform velocity. The system also includes a projection subsystem configured to project the electron beam onto the specimen while the stage is moving the specimen at the non-uniform velocity. In addition, the system includes a control subsystem configured to alter one or more characteristics of the electron beam while the projection subsystem is projecting the electron beam onto the specimen based on the non-uniform velocity. One method includes moving the specimen with a non-uniform velocity and projecting the electron beam onto the specimen during movement of the specimen. In addition, the method includes altering one or more characteristics of the electron beam during projection of the electron beam onto the specimen based on the non-uniform velocity.

Abstract: One embodiment relates to an apparatus for generating a dual-energy electron beam. A first electron beam source is configured to generate a lower-energy electron beam, and a second electron beam source is configured to generate a higher-energy electron beam. A holey mirror is biased to reflect the lower-energy electron beam. The holey mirror also includes an opening therein through which passes the higher-energy electron beam, thereby forming the dual-energy electron beam. A prism array combiner introduces a first dispersion between the lower-energy electron beam and the higher-energy electron beam within the dual-energy electron beam. A prism array separator is configured to separate the dual-energy electron beam traveling to a substrate from a scattered electron beam traveling away from the substrate. The prism array separator introduces a second dispersion which compensates for the dispersion of the prism array combiner. Other embodiments are also disclosed.

Abstract: One embodiment relates to a scanning electron beam apparatus having curved electron-optical axes. An electron gun and illumination electron optics are configured to generate a primary electron beam along a first axis. Objective electron optics is configured about a second axis to receive the primary electron beam, to focus the incident electron beam onto the substrate, and to retrieve an emitted beam of scattered electrons from the substrate. Detection electron optics is configured about a third axis to receive the emitted beam and to focus the emitted beam onto a detector. A beam separator is coupled to and interconnecting the illumination electron optics, the objective electron optics, and the detection electron optics in such a way that there is a same angle between the first and second axes as between the second and third axes. A beam deflector is configured to controllably scan the primary electron beam across the substrate and to de-scan the emitted electron beam. Other embodiments are also disclosed.

Abstract: Systems, control subsystems, and methods for projecting an electron beam onto a specimen are provided. One system includes a stage configured to move the specimen with a non-uniform velocity. The system also includes a projection subsystem configured to project the electron beam onto the specimen while the stage is moving the specimen at the non-uniform velocity. In addition, the system includes a control subsystem configured to alter one or more characteristics of the electron beam while the projection subsystem is projecting the electron beam onto the specimen based on the non-uniform velocity. One method includes moving the specimen with a non-uniform velocity and projecting the electron beam onto the specimen during movement of the specimen. In addition, the method includes altering one or more characteristics of the electron beam during projection of the electron beam onto the specimen based on the non-uniform velocity.

Abstract: An electron beam lithography system has an electron gun including at least one laser that is operable in a first mode to generate electrons for lithography. The electron beam lithography system is operable in a second mode to regenerate the photocathode of the electron gun by application of the laser. The photocathode includes a layer of cesium telluride.

Abstract: One embodiment disclosed relates to an apparatus for inspecting a substrate using charged particles. The apparatus includes an illumination subsystem, an objective subsystem, a projection subsystem, and a beam separator interconnecting those subsystems. Advantageously, the illumination subsystem includes a tilt deflector configured to controllably tilt the incident beam. The tilt of the incident beam caused by the tilt deflector is magnified prior to the incident beam impinging onto the substrate. This technique allows for achieving large beam tilts at the substrate without lens aberrations caused by introducing tilt at the objective lens and without complications due to using a tiltable stage. Other embodiments are also disclosed.

Abstract: One embodiment disclosed relates to a LEEM-type apparatus for inspecting a substrate. An illumination system generates an incident beam, and an objective lens system focuses the incident beam onto the substrate. In this case, the objective lens system comprises a magnetic immersion lens causing circumferential velocities in the incident beam, and the illumination system includes another magnetic immersion lens causing circumferential velocities in the incident beam that compensate for the circumferential velocities caused by the magnetic immersion lens in the objective lens system. Advantageously, this enables improved performance of parallel imaging e-beam systems that use a magnetic immersion objective lens.

Abstract: One embodiment disclosed relates to a method for inspecting or reviewing a magnetized specimen using an automated inspection apparatus. The method includes generating a beam of incident electrons using an electron source, biasing the specimen with respect to the electron source such that the incident electrons decelerate as a surface of the specimen is approached, and illuminating a portion of the specimen at a tilt with the beam of incident electrons. The specimen is moved under the incident beam of electrons using a movable stage of the inspection apparatus. Scattered electrons are detected to form image data of the specimen showing distinct contrast between regions of different magnetization. The movement of the specimen under the beam of incident electrons may be continuous, and data for multiple image pixels may be acquired in parallel using a time delay integrating detector.

Abstract: One embodiment disclosed relates to a method of electron beam inspection or review of a substrate having insulating materials therein. An area of the substrate is simultaneously exposed to a lower-energy electron beam and an overlapping higher-energy electron beam. The area is subsequently inspected with another electron beam. Another embodiment disclosed relates to an electron beam tool for examination of a substrate having insulating materials therein. A first cathode is configured as an electron source for a lower-energy electron beam, and a second cathode is configured as an electron source for a higher-energy electron beam. At least one electron lens is configured to focus the lower-energy electron beam and the higher-energy electron beam onto an overlapping area of a substrate. An electron beam column is subsequently used to examine the substrate.

Abstract: One embodiment disclosed pertains to a method for inspecting a substrate. The method includes inserting the substrate into a holding place of a substrate holder, moving the substrate holder under an electron beam, and applying a voltage to a conductive element of the substrate holder. The voltage applied to the conductive element reduces a substrate edge effect. Another embodiment disclosed relates to an apparatus for holding a substrate that reduces a substrate edge effect. The apparatus includes a holding place for insertion of the substrate and a conductive element. The conductive element is positioned so as to be located within a gap between an edge of the holding place and an edge of the substrate.

Abstract: One embodiment disclosed relates to an apparatus for inspecting a substrate using charged particles. The apparatus includes illumination optics, objective optics, projection optics, and a beam separator. The beam separator is configured to receive the incident beam from the illumination optics and bend the incident beam towards the objective optics, and also to receive the scattered beam from the objective optics and bend the scattered beam towards the projection optics. The beam separator comprises a magnetic prism array including a central magnetic sector, inner magnetic sectors outside the central sector, and outer magnetic sectors outside the inner sectors. Each of the inner and outer sectors may be configured to have its field strength independently adjustable for alignment and focusing purposes.

Abstract: One embodiment disclosed relates to an apparatus for reflection electron beam lithography. An electron source is configured to emit electrons. The electrons are reflected to a target substrate by portions of an electron-opaque patterned structure having a lower voltage level and are absorbed by portions of the structure having a higher voltage level. Another embodiment relates to a novel method of electron beam lithography. An incident electron beam is formed and directed to an opaque patterned structure. Electrons are reflected from portions of the structure having a lower voltage level applied thereto and are absorbed by portions of the structure having a higher voltage level applied thereto. The reflected electrons are directed towards a target substrate to form an image and expose a lithographic pattern.

Abstract: Disclosed is an apparatus for electron beam inspection of a specimen with improved potential throughput. The apparatus includes an immersion objective lens focusing the primary electrons into a beam that impinges onto a spot on the specimen. Also disclosed is a method for automatic electron beam inspection of a specimen. The method includes producing a magnetic field towards the specimen that reduces aberration towards an outer portion of the multiple pixel imaging region.