Abstract: An artificial neuron includes a single-component electric dipole including a single material which belongs to the class of Mott insulators and is connected to first and second electric electrodes.

Abstract: A material belonging to the family of centrosymmetric Mott insulators is used as an active material in a resistively switched memory for storing data. The material is placed between two electrical electrodes, by virtue of which an electric field of a preset value is applied in order to form, by way of an electron avalanche effect, an elementary information cell that has at least two logic states.

Abstract: An artificial neuron includes a single-component electric dipole including a single material which belongs to the class of Mott insulators and is connected to first and second electric electrodes.

Abstract: The invention relates to a method for preparing a thin film of at least one compound of formula AM4X8, where: A is Ga or Ge; M is V, Nb, Ta or Mo; and X is S or Se. Said method includes the following steps: i) a step of forming a thin film of at least one compound of formula AM4X8 by the magnetron spraying of a target including at least one compound of said formula AM4X8, in an atmosphere including at least one inert gas; and ii) a step of annealing the thin film formed during step i) by heat treating; wherein step i) and/or step ii) are carried out in the presence of sulphur when X is S or in the presence of selenium when X is Se.

Abstract: A material belonging to the family of centrosymmetric Mott insulators is used as an active material in a resistively switched memory for storing data. The material is placed between two electrical electrodes, by virtue of which an electric field of a preset value is applied in order to form, by way of an electron avalanche effect, an elementary information cell that has at least two logic states.

Abstract: The invention relates to the use of a material that belongs to the class of lacunar spinels with tetrahedral aggregates of an AM4X8 transition element as the active material for an electronic data non-volatile memory, in which: A includes at least one of the following elements: Ga, Ge, Zn; M includes at least one of the following elements: V, Nb, Ta, Mo; and X includes at least one of the following elements: S, Se.

Abstract: The invention relates to a method for preparing a thin film of at least one compound of formula AM4X8, where: A is Ga or Ge; M is V, Nb, Ta or Mo; and X is S or Se. Said method includes the following steps: i) a step of forming a thin film of at least one compound of formula AM4X8 by the magnetron spraying of a target including at least one compound of said formula AM4X8, in an atmosphere including at least one inert gas; and ii) a step of annealing the thin film formed during step i) by heat treating; wherein step i) and/or step ii) are carried out in the presence of sulphur when X is S or in the presence of selenium when X is Se.

Abstract: The invention relates to the use of a material that belongs to the class of lacunar spinels with tetrahedral aggregates of an AM4X8 transition element as the active material for an electronic data non-volatile memory, in which: A comprises at least one of the following elements: Ga, Ge, Zn; M comprises at least one of the following elements: V, Nb, Ta, Mo; and X comprises at least one of the following elements: S, Se.

Abstract: The fiter membrane comprises a porous structure made of a material selected from sintered ceramics, sintered metals, microporous carbon, and microporous glass, and is characterized by the fact that its entire external surface, including the inside surface of the pores in the structure, is covered with a thin and continuous film of carbon or of an oxide. In a sintered aluminum membrane, the surfaces of pores are coated with a dense and continuous thin layer of zirconia which prevents the surfaces from being degraded in service. In the figure, curve 3 shows how the throughput of a membrane without a zirconia layer falls off over time, while curve 4 shows little change in the same membrane having such a layer.

Abstract: The filter membrane comprises a porous structure made of a material selected from sintered ceramics, sintered metals, microporous carbon, and microporous glass, and is characterized by the fact that its entire external surface, including the inside surface of the pores in the structure, is covered with a thin and continuous film of carbon or of an oxide. In a sintered aluminum membrane, the surfaces of pores are coated with a dense and continuous thin layer of zirconia which prevents the surfaces from being degraded in service. In the figure, curve 3 shows how the throughput of a membrane without a zirconia layer falls off over time, while curve 4 shows little change in the same membrane having such a layer.