Abstract: This rotor manufacturing method includes the steps of: pressing a rotor core in a central axis direction by using a core pressing member; and fixing a shaft to the rotor core by performing, with the rotor core pressed, hydroforming that involves pressure-welding the shaft to an inner peripheral surface of a shaft insertion hole.

Abstract: A method for manufacturing a rotor includes: an inserting step of inserting a shaft into a shaft insertion hole in such a manner that a distance between a vertex of the shaft insertion hole having a non-circular shape and an outer peripheral surface of the shaft is equal to a first distance and a distance between the outer peripheral surface of the shaft and a side of the shaft insertion hole is equal to a second distance that is smaller than the first distance; and a fixing step of fixing the shaft to the laminated core by hydroforming.

Abstract: A rotor includes: a shaft having a tubular shape; and a rotor core including a through hole into which the shaft is inserted and that has a regular polygonal shape. The shaft is fixed to the rotor core by hydroforming. Of an outer peripheral surface of the shaft, a core contact part that is in contact with the through hole of the rotor core that has the regular polygonal shape has a shape extending along the regular polygonal shape.

Abstract: This rotor manufacturing method includes the steps of: pressing a rotor core in a central axis direction by using a core pressing member; and fixing a shaft to the rotor core by performing, with the rotor core pressed, hydroforming that involves pressure-welding the shaft to an inner peripheral surface of a shaft insertion hole.

Abstract: A cable for a high-voltage electronic device having a small diameter and an excellent voltage resistance characteristic. The cable includes an inner semiconducting layer, a high-voltage insulator, an outer semiconducting layer, a shielding layer, and a sheath on an outer periphery of a cable core portion, wherein the high-voltage insulator is formed of an insulating composition containing 0.5 to 5 parts by mass of an inorganic filler with respect to 100 parts by mass of an olefin-based polymer, and the inorganic filler has an average dispersed-particle diameter of 1 ?m or less.

Abstract: A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a penetration electrode, a first insulating interlayer, a first electrode, and a first contact plug. The imaging element is formed on a first main surface of a semiconductor substrate. The external terminal is formed on a second main surface facing the first main surface of the substrate. The insulating film is formed in a through-hole formed in the substrate. The penetration electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first insulating interlayer is formed on the first main surface of the substrate and the penetration electrode. The first electrode is formed on the first insulating interlayer. The first contact plug is formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode.

Abstract: A cable for high-voltage electronic devices including an inner semiconductive layer, a high-voltage insulator, an outer semiconductive layer, a shielding layer, and a sheath which are provided on an outer periphery of a cable core part in the order mentioned, wherein the high-voltage insulator is made of an insulating composition whose temperature dependence parameter DR found by the following expression is 1.0 or less: DR=log R23° C.?log R90° C. (where R23° C. is volume resistivity (?·cm) at 23° C. and R90° C. is volume resistivity (?·cm) at 90° C.). The cable for high-voltage electronic devices is small in diameter and has an excellent withstand voltage characteristic.

Abstract: A hard disk drive (HDD) provides for the logical removal of defective physical heads. The HDD includes one or more disks organized into a plurality of regions, each region having a plurality of physical block addresses (PBAs). A number of physical heads are used to read and write information to the disks. A controller is configured to translate logical block addresses (LBAs) received from an external system to PBAs used to access the one or more disks, wherein the controller is configured to logically remove a defective physical head from service by dynamically re-assigning LBAs to each of the plurality of regions while preventing LBAs from being assigned to regions associated with the defective physical head.

Abstract: According to one embodiment, a solid-state image sensor includes a semiconductor substrate including a first surface on which light enters, and a second surface opposite to the first surface, a pixel region formed in the semiconductor substrate, and including a photoelectric conversion element which converts the incident light into an electrical signal, a peripheral region formed in the semiconductor substrate, and including a circuit which controls an operation of the element in the pixel region, a plurality of interconnects which are formed in a plurality of interlayer insulating films stacked on the second surface, and are connected to the circuit, and a support substrate formed on the stacked interlayer insulating films and the interconnects. An uppermost one of the interconnects formed in an uppermost one of the interlayer insulating films is buried in a first trench formed in the uppermost interlayer insulating film.

Abstract: A cable for high-voltage electronic devices including an inner semiconductive layer, a high-voltage insulator, an outer semiconductive layer, a shielding layer, and a sheath which are provided on an outer periphery of a cable core part in the order mentioned, wherein the high-voltage insulator is made of an insulating composition whose temperature dependence parameter DR found by the following expression is 1.0 or less: DR=log R23° C.?log R90° C. (where R23° C. is volume resistivity (?·cm) at 23° C. and R90° C. is volume resistivity (?·cm) at 90° C.). The cable for high-voltage electronic devices is small in diameter and has an excellent withstand voltage characteristic.

Abstract: An object aims to develop a lactic acid bacterium having an anti-allergic activity, which can be grown by using rice, particularly polished white rice, and can be collected, cooked and ingested together with rice in such a state that the lactic acid bacterium is attached to the surface of the rice. Another object aims to develop a food composition and a pharmaceutical composition, each of which comprises rice containing the lactic acid bacterium as a material. Thus, disclosed are: a lactic acid bacterium Lactobacillus paracasei K71 strain which has been internationally deposited in National Institute of Advanced Industrial Science and Technology, International Patent Organism Depositary under Accession No.

Abstract: A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a penetration electrode, a first insulating interlayer, a first electrode, and a first contact plug. The imaging element is formed on a first main surface of a semiconductor substrate. The external terminal is formed on a second main surface facing the first main surface of the substrate. The insulating film is formed in a through-hole formed in the substrate. The penetration electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first insulating interlayer is formed on the first main surface of the substrate and the penetration electrode. The first electrode is formed on the first insulating interlayer. The first contact plug is formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode.

Abstract: A cable for a high-voltage electronic device having a small diameter and an excellent voltage resistance characteristic. The cable includes an inner semiconducting layer, a high-voltage insulator, an outer semiconducting layer, a shielding layer, and a sheath on an outer periphery of a cable core portion, wherein the high-voltage insulator is formed of an insulating composition containing 0.5 to 5 parts by mass of an inorganic filler with respect to 100 parts by mass of an olefin-based polymer, and the inorganic filler has an average dispersed-particle diameter of 1 ?m or less.

Abstract: A solid state imaging element comprises: photoelectric conversion elements; a plurality of vertical electric charge transfer passages that transfer, in a vertical direction, electric charges generated by the photoelectric conversion elements; and a horizontal electric charge transfer passage that transfers, in a horizontal direction perpendicular to the vertical direction, the electric charges transferred in the vertical electric charge transfer passage, wherein the horizontal electric charge transfer passage comprises a plurality of electric charge transferring stages each of which operates as an electric charge accumulating region or a barrier region according to a level of an applied voltage, and each of said plurality of electric charge transferring stages is connected to plural ones of the vertical electric charge transfer passages.

Abstract: According to one embodiment, a solid-state image sensor includes a semiconductor substrate including a first surface on which light enters, and a second surface opposite to the first surface, a pixel region formed in the semiconductor substrate, and including a photoelectric conversion element which converts the incident light into an electrical signal, a peripheral region formed in the semiconductor substrate, and including a circuit which controls an operation of the element in the pixel region, a plurality of interconnects which are formed in a plurality of interlayer insulating films stacked on the second surface, and are connected to the circuit, and a support substrate formed on the stacked interlayer insulating films and the interconnects. An uppermost one of the interconnects formed in an uppermost one of the interlayer insulating films is buried in a first trench formed in the uppermost interlayer insulating film.

Abstract: An object aims to develop a lactic acid bacterium having an anti-allergic activity, which can be grown by using rice, particularly polished white rice, and can be collected, cooked and ingested together with rice in such a state that the lactic acid bacterium is attached to the surface of the rice. Another object aims to develop a food composition and a pharmaceutical composition, each of which comprises rice containing the lactic acid bacterium as a material. Thus, disclosed are: a lactic acid bacterium Lactobacillus paracasei K71 strain which has been internationally deposited in National Institute of Advanced Industrial Science and Technology, International Patent Organism Depositary under Accession No.

Abstract: A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a penetration electrode, a first insulating interlayer, a first electrode, and a first contact plug. The imaging element is formed on a first main surface of a semiconductor substrate. The external terminal is formed on a second main surface facing the first main surface of the substrate. The insulating film is formed in a through-hole formed in the substrate. The penetration electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first insulating interlayer is formed on the first main surface of the substrate and the penetration electrode. The first electrode is formed on the first insulating interlayer. The first contact plug is formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode.

Abstract: A solid state imaging element comprises: photoelectric conversion elements; a plurality of vertical electric charge transfer passages that transfer, in a vertical direction, electric charges generated by the photoelectric conversion elements; and a horizontal electric charge transfer passage that transfers, in a horizontal direction perpendicular to the vertical direction, the electric charges transferred in the vertical electric charge transfer passage, wherein the horizontal electric charge transfer passage comprises a plurality of electric charge transferring stages each of which operates as an electric charge accumulating region or a barrier region according to a level of an applied voltage, and each of said plurality of electric charge transferring stages is connected to plural ones of the vertical electric charge transfer passages.

Abstract: A charge transfer section includes first transfer electrodes for effecting the reading and transfer of electric charges and the transfer of signal charges and second transfer electrodes each provided between adjacent ones of the first transfer electrodes to effect the transfer of the signal charges along the charge transfer section. A timing signal supplying section supplies a driving pulse signal to the first and second transfer electrodes when the signal charges are transferred along the charge transfer section, and supplies a pulse signal for constituting a barrier potential of a level at which the first transfer electrodes do not produce a dark current for photoelectric conversion elements when the transfer of the signal charges along the charge transfer section is stopped.

Abstract: According to one embodiment, a solid-state image sensor includes a semiconductor substrate including a first surface on which light enters, and a second surface opposite to the first surface, a pixel region formed in the semiconductor substrate, and including a photoelectric conversion element which converts the incident light into an electrical signal, a peripheral region formed in the semiconductor substrate, and including a circuit which controls an operation of the element in the pixel region, a plurality of interconnects which are formed in a plurality of interlayer insulating films stacked on the second surface, and are connected to the circuit, and a support substrate formed on the stacked interlayer insulating films and the interconnects. An uppermost one of the interconnects formed in an uppermost one of the interlayer insulating films is buried in a first trench formed in the uppermost interlayer insulating film.