Abstract: A liquid crystal display device includes a first substrate, a second substrate, and a liquid crystal layer. Each pixel includes a reflective region and a transmissive region. The first substrate includes a reflective layer, an interlayer insulating layer provided to cover the reflective layer, and a pixel electrode provided on the interlayer insulating layer in each pixel. The interlayer insulating layer has a recess portion which is defined by a bottom surface and an inclined side surface and at least a part of which is located in the transmissive region. A depth of the recess portion of the interlayer insulating layer is 0.5 ?m or more, and an inclination angle of the inclined side surface of the recess portion is 25° or less.

Abstract: According to one embodiment, a light detector includes a plurality of elements. Each of the elements includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region is located on the first semiconductor region and has a higher first-conductivity-type impurity concentration than the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The elements are arranged at a first period in a second direction crossing a first direction. The first direction is from the first semiconductor region toward the second semiconductor region. A quenching part is electrically connected with the third semiconductor region. Multiple lenses are located respectively on the elements. One of the lenses is positioned on one of the elements. A refracting layer is located between the elements and the lenses. The refracting layer has a first thickness.

Abstract: The present disclosure provides a pharmaceutical composition for treating and/or preventing SWI/SNF complex-dysfunction cancer. More specifically, according to the present disclosure, a compound represented by formulae (1) to (23) (the formulae are as set forth in the specification) or a pharmaceutically acceptable salt thereof can have a therapeutic and/or prophylactic effect on SWI/SNF complex-dysfunction cancer. A pharmaceutical composition, which is for treating and/or preventing cancer and contains a CBP/P300 inhibitor, can be provided. The cancer may be SWI/SNF complex-dysfunction cancer. The SWI/SNF complex-dysfunction cancer may be BAF complex-dysfunction cancer. The BAF complex-dysfunction cancer may be SMARC-deficient cancer, ARID-deficient cancer, or SS18-SSX fusion cancer. The SMARC-deficient cancer may be SMARCB1-deficient cancer, SMARCA2-deficient cancer, SMARCA4-deficient cancer, or SMARCA2/A4-deficient cancer.

Abstract: A light detector according to one embodiment, includes a substrate. The substrate includes a first semiconductor layer, an insulating layer, and a second semiconductor layer. The insulating layer is located on the first semiconductor layer. The second semiconductor layer is located on the insulating layer. The second semiconductor layer includes a photoelectric conversion part. The photoelectric conversion part includes a first semiconductor region and a second semiconductor region. The substrate includes a void and a trench. The void is positioned below the photoelectric conversion part and between the first semiconductor layer and the second semiconductor layer. The trench surrounds the photoelectric conversion part. A lower end of the trench is positioned in the second semiconductor layer. The photoelectric conversion part is electrically connected with an upper surface side of the substrate via a portion below the trench.

Abstract: A rotary operating device includes a case, a rotating shaft member, an operation member, and a sensor. The case has a cavity having an annular shape with an opening at a top. The rotating shaft member is rotatable with respect to the case. The operation member rotates together with the rotating shaft member. The sensor is disposed within the cavity to detect rotation of the rotating shaft member. The case has an inner peripheral wall. The operation member has an inner cylindrical portion. The rotating shaft member has a peripheral wall that extends downward and along an outer peripheral surface of the inner peripheral wall. A first gap between the inner peripheral wall of the case and the peripheral wall of the rotating shaft member is smaller than a second gap between an inner peripheral surface of the rotating shaft member and the inner cylindrical portion of the operation member.

Abstract: A light detector includes a semiconductor layer and a light-receiving element. The semiconductor layer is of a first conductivity type. The light-receiving element includes a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region. The first semiconductor region is of a second conductivity type. The second semiconductor region is located between the first semiconductor region and the semiconductor layer. The second semiconductor region is of the first conductivity type and contacts the first semiconductor region. The third semiconductor region is located between the second semiconductor region and the semiconductor layer. The third semiconductor region is of the second conductivity type. The fourth semiconductor region is located between the third semiconductor region and the semiconductor layer.