Patents by Inventor Marinus J. P. Hopstaken
Marinus J. P. Hopstaken has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11700778Abstract: A method of controlling the forming voltage of a dielectric film in a resistive random access memory (ReRAM) device. The method includes depositing a dielectric film contains intrinsic defects on a substrate, forming a plasma-excited treatment gas containing H2 gas, and exposing the dielectric film to the plasma-excited treatment gas to create additional defects in the dielectric film without substantially changing a physical thickness of the dielectric film, where the additional defects lower the forming voltage needed for generating an electrically conducting filament across the dielectric film. The dielectric film can include a metal oxide film and the plasma-excited treatment gas may be formed using a microwave plasma source.Type: GrantFiled: April 9, 2021Date of Patent: July 11, 2023Assignee: Tokyo Electron LimitedInventors: Steven Consiglio, Cory Wajda, Kandabara Tapily, Takaaki Tsunomura, Takashi Ando, Paul C. Jamison, Eduard A. Cartier, Vijay Narayanan, Marinus J. P. Hopstaken
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Publication number: 20210234096Abstract: A method of controlling the forming voltage of a dielectric film in a resistive random access memory (ReRAM) device. The method includes depositing a dielectric film contains intrinsic defects on a substrate, forming a plasma-excited treatment gas containing H2 gas, and exposing the dielectric film to the plasma-excited treatment gas to create additional defects in the dielectric film without substantially changing a physical thickness of the dielectric film, where the additional defects lower the forming voltage needed for generating an electrically conducting filament across the dielectric film. The dielectric film can include a metal oxide film and the plasma-excited treatment gas may be formed using a microwave plasma source.Type: ApplicationFiled: April 9, 2021Publication date: July 29, 2021Inventors: Steven Consiglio, Cory Wajda, Kandabara Tapily, Takaaki Tsunomura, Takashi Ando, Paul C. Jamison, Eduard A. Cartier, Vijay Narayanan, Marinus J.P. Hopstaken
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Patent number: 10991881Abstract: A method of controlling the forming voltage of a dielectric film in a resistive random access memory (ReRAM) device. The method includes depositing a dielectric film contains intrinsic defects on a substrate, forming a plasma-excited treatment gas containing H2 gas, and exposing the dielectric film to the plasma-excited treatment gas to create additional defects in the dielectric film without substantially changing a physical thickness of the dielectric film, where the additional defects lower the forming voltage needed for generating an electrically conducting filament across the dielectric film. The dielectric film can include a metal oxide film and the plasma-excited treatment gas may be formed using a microwave plasma source.Type: GrantFiled: May 31, 2019Date of Patent: April 27, 2021Assignee: Tokyo Electron LimitedInventors: Steven Consiglio, Cory Wajda, Kandabara Tapily, Takaaki Tsunomura, Takashi Ando, Paul C. Jamison, Eduard A. Cartier, Vijay Narayanan, Marinus J. P. Hopstaken
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Patent number: 10978604Abstract: A method for fabricating a photovoltaic device includes forming a polycrystalline absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) over a substrate. The absorber layer is rapid thermal annealed in a sealed chamber having elemental sulfur within the chamber. A sulfur content profile is graded in the absorber layer in accordance with a size of the elemental sulfur and an anneal temperature to provide a graduated bandgap profile for the absorber layer. Additional layers are formed on the absorber layer to complete the photovoltaic device.Type: GrantFiled: May 11, 2017Date of Patent: April 13, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Talia S. Gershon, Marinus J. P. Hopstaken, Jeehwan Kim, Yun Seog Lee
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Publication number: 20200381624Abstract: A method of controlling the forming voltage of a dielectric film in a resistive random access memory (ReRAM) device. The method includes depositing a dielectric film contains intrinsic defects on a substrate, forming a plasma-excited treatment gas containing H2 gas, and exposing the dielectric film to the plasma-excited treatment gas to create additional defects in the dielectric film without substantially changing a physical thickness of the dielectric film, where the additional defects lower the forming voltage needed for generating an electrically conducting filament across the dielectric film. The dielectric film can include a metal oxide film and the plasma-excited treatment gas may be formed using a microwave plasma source.Type: ApplicationFiled: May 31, 2019Publication date: December 3, 2020Inventors: Steven Consiglio, Cory Wajda, Kandabara Tapily, Takaaki Tsunomura, Takashi Ando, Paul C. Jamison, Eduard A. Cartier, Vijay Narayanan, Marinus J.P. Hopstaken
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Patent number: 10833311Abstract: An anode structure for rechargeable lithium-ion batteries that have a high-capacity are provided. The anode structure, which is made utilizing an anodic etching process, is of unitary construction and includes a non-porous region and a porous region including a top porous layer (Porous Region 1) having a first thickness and a first porosity, and a bottom porous layer (Porous Region 2) located beneath the top porous layer and forming an interface with the non-porous region. At least an upper portion of the non-porous region and the entirety of the porous region are composed of silicon, and the bottom porous layer has a second thickness that is greater than the first thickness, and a second porosity that is greater than the first porosity.Type: GrantFiled: July 3, 2018Date of Patent: November 10, 2020Assignee: International Business Machines CorporationInventors: Joel P. de Souza, John Collins, Devendra K. Sadana, John A. Ott, Marinus J. P. Hopstaken, Stephen W. Bedell
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Publication number: 20200014018Abstract: An anode structure for rechargeable lithium-ion batteries that have a high-capacity are provided. The anode structure, which is made utilizing an anodic etching process, is of unitary construction and includes a non-porous region and a porous region including a top porous layer (Porous Region 1) having a first thickness and a first porosity, and a bottom porous layer (Porous Region 2) located beneath the top porous layer and forming an interface with the non-porous region. At least an upper portion of the non-porous region and the entirety of the porous region are composed of silicon, and the bottom porous layer has a second thickness that is greater than the first thickness, and a second porosity that is greater than the first porosity.Type: ApplicationFiled: July 3, 2018Publication date: January 9, 2020Inventors: Joel P. de Souza, John Collins, Devendra K. Sadana, John A. Ott, Marinus J. P. Hopstaken, Stephen W. Bedell
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Patent number: 10529832Abstract: Embodiments are directed to a method of forming a semiconductor device and resulting structures having a shallow, abrupt and highly activated tin (Sn) extension implant junction. The method includes forming a semiconductor fin on a substrate. A gate is formed over a channel region of the semiconductor fin. A Sn extension implant junction is formed on a surface of the semiconductor fin in the channel region.Type: GrantFiled: December 19, 2016Date of Patent: January 7, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John Bruley, Marinus J. P. Hopstaken, Kam-Leung Lee
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Publication number: 20180175174Abstract: Embodiments are directed to a method of forming a semiconductor device and resulting structures having a shallow, abrupt and highly activated tin (Sn) extension implant junction. The method includes forming a semiconductor fin on a substrate. A gate is formed over a channel region of the semiconductor fin. A Sn extension implant junction is formed on a surface of the semiconductor fin in the channel region.Type: ApplicationFiled: December 19, 2016Publication date: June 21, 2018Inventors: John Bruley, Marinus J.P. Hopstaken, Kam-Leung Lee
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Publication number: 20170250302Abstract: A method for fabricating a photovoltaic device includes forming a polycrystalline absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) over a substrate. The absorber layer is rapid thermal annealed in a sealed chamber having elemental sulfur within the chamber. A sulfur content profile is graded in the absorber layer in accordance with a size of the elemental sulfur and an anneal temperature to provide a graduated bandgap profile for the absorber layer. Additional layers are formed on the absorber layer to complete the photovoltaic device.Type: ApplicationFiled: May 11, 2017Publication date: August 31, 2017Inventors: Talia S. Gershon, Marinus J.P. Hopstaken, Jeehwan Kim, Yun Seog Lee
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Patent number: 9722120Abstract: A method for fabricating a photovoltaic device includes forming a polycrystalline absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) over a substrate. The absorber layer is rapid thermal annealed in a sealed chamber having elemental sulfur within the chamber. A sulfur content profile is graded in the absorber layer in accordance with a size of the elemental sulfur and an anneal temperature to provide a graduated bandgap profile for the absorber layer. Additional layers are formed on the absorber layer to complete the photovoltaic device.Type: GrantFiled: September 14, 2015Date of Patent: August 1, 2017Assignee: International Business Machines CorporationInventors: Talia S. Gershon, Marinus J. P. Hopstaken, Jeehwan Kim, Yun Seog Lee
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Patent number: 9679775Abstract: An approach to providing a method of forming a dopant junction in a semiconductor device. The approach includes performing a surface modification treatment on an exposed surface of a semiconductor layer and depositing a dopant material on the exposed surface of the semiconductor layer. Furthermore, the approach includes alloying a metal layer with a dopant layer to form a semiconductor device junction where the semiconductor layer is composed of a Group III-V semiconductor material, the surface modification treatment occurs in a vacuum chamber to remove surface oxides from the exposed surface of the semiconductor layer, and each of the above processes occur at a low temperature.Type: GrantFiled: July 15, 2016Date of Patent: June 13, 2017Assignee: International Business Machines CorporationInventors: Kevin K. Chan, Marinus J. P. Hopstaken, Young-Hee Kim, Masaharu Kobayashi, Effendi Leobandung, Deborah A. Neumayer, Dae-Gyu Park, Uzma Rana, Tsong-Lin Tai
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Publication number: 20170077337Abstract: A method for fabricating a photovoltaic device includes forming a polycrystalline absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) over a substrate. The absorber layer is rapid thermal annealed in a sealed chamber having elemental sulfur within the chamber. A sulfur content profile is graded in the absorber layer in accordance with a size of the elemental sulfur and an anneal temperature to provide a graduated bandgap profile for the absorber layer. Additional layers are formed on the absorber layer to complete the photovoltaic device.Type: ApplicationFiled: September 14, 2015Publication date: March 16, 2017Inventors: Talia S. Gershon, Marinus J.P. Hopstaken, Jeehwan Kim, Yun Seog Lee
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Publication number: 20160329211Abstract: An approach to providing a method of forming a dopant junction in a semiconductor device. The approach includes performing a surface modification treatment on an exposed surface of a semiconductor layer and depositing a dopant material on the exposed surface of the semiconductor layer. Furthermore, the approach includes alloying a metal layer with a dopant layer to form a semiconductor device junction where the semiconductor layer is composed of a Group III-V semiconductor material, the surface modification treatment occurs in a vacuum chamber to remove surface oxides from the exposed surface of the semiconductor layer, and each of the above processes occur at a low temperature.Type: ApplicationFiled: July 15, 2016Publication date: November 10, 2016Inventors: Kevin K. Chan, Marinus J.P. Hopstaken, Young-Hee Kim, Masaharu Kobayashi, Effendi Leobandung, Deborah A. Neumayer, Dae-Gyu Park, Uzma Rana, Tsong-Lin Tai
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Publication number: 20160254150Abstract: An approach to providing a method of forming a dopant junction in a semiconductor device. The approach includes performing a surface modification treatment on an exposed surface of a semiconductor layer and depositing a dopant material on the exposed surface of the semiconductor layer. Additionally, the approach includes performing a low temperature anneal in an oxygen free environment followed by depositing a metal layer on the dopant layer. Furthermore, the approach includes alloying the metal layer with the dopant layer to form a semiconductor device junction where the semiconductor layer is composed of a Group III-V semiconductor material, the surface modification treatment occurs in a vacuum chamber to remove surface oxides from the exposed surface of the semiconductor layer, and each of the above processes occur at a low temperature.Type: ApplicationFiled: February 27, 2015Publication date: September 1, 2016Inventors: Kevin K. Chan, Marinus J.P. Hopstaken, Young-Hee Kim, Masaharu Kobayashi, Effendi Leobandung, Deborah A. Neumayer, Dae-Gyu Park, Uzma Rana, Tsong-Lin Tai
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Patent number: 9418846Abstract: An approach to providing a method of forming a dopant junction in a semiconductor device. The approach includes performing a surface modification treatment on an exposed surface of a semiconductor layer and depositing a dopant material on the exposed surface of the semiconductor layer. Additionally, the approach includes performing a low temperature anneal in an oxygen free environment followed by depositing a metal layer on the dopant layer. Furthermore, the approach includes alloying the metal layer with the dopant layer to form a semiconductor device junction where the semiconductor layer is composed of a Group III-V semiconductor material, the surface modification treatment occurs in a vacuum chamber to remove surface oxides from the exposed surface of the semiconductor layer, and each of the above processes occur at a low temperature.Type: GrantFiled: February 27, 2015Date of Patent: August 16, 2016Assignee: International Business Machines CorporationInventors: Kevin K. Chan, Marinus J. P. Hopstaken, Young-Hee Kim, Masaharu Kobayashi, Effendi Leobandung, Deborah A. Neumayer, Dae-Gyu Park, Uzma Rana, Tsong-Lin Tai