Abstract: In some implementations, an opto-electrical device includes a heatsink; a thermally conductive element disposed on a first region of a surface of the heatsink; an adaptive thickness thermally conductive pad disposed on the thermally conductive element; an integrated circuit (IC) disposed on the adaptive thickness thermally conductive pad; a thermoelectric cooler (TEC) disposed on a second region of the surface of the heatsink; an opto-electrical chip disposed on the TEC; and a substrate disposed on the IC and the opto-electrical chip, wherein the substrate is configured to electrically connect the IC and the opto-electrical chip.

Abstract: A chip comprising a bonding pad region and a transmission section. The bonding pad region has a first impedance, and is configured for electrical connection to an external transmission line. The transmission section extends away from the bonding pad region and has a second impedance. The bonding pad region is configured to enable field confinement and field matching between the bonding pad region and the external transmission line, and the second impedance is not equal to the first impedance.

Abstract: An RF transition assembly (300) for enabling a radiofrequency transition between an RF transmission layer (301) of an electronic device and a conductor (309) which is electrically connected (317) to the RF transmission layer (301). The conductor (309) extends generally orthogonal to the RF transmission layer (301). The assembly comprises an open coaxial structure (313) located adjacent to an edge of the RF transmission layer (301). The open coaxial structure (313) comprises a cavity (315) extending therethrough for receiving the conductor (309). The cavity (315) comprises an opening facing the edge of the RF transmission layer (301) so as to direct electromagnetic radiation towards the RF transmission layer (301).

Abstract: A chip comprising a bonding pad region and a transmission section. The bonding pad region has a first impedance, and is configured for electrical connection to an external transmission line. The transmission section extends away from the bonding pad region and has a second impedance. The bonding pad region is configured to enable field confinement and field matching between the bonding pad region and the external transmission line, and the second impedance is not equal to the first impedance.

Abstract: An RF transition assembly (300) for enabling a radiofrequency transition between an RF transmission layer (301) of an electronic device and a conductor (309) which is electrically connected (317) to the RF transmission layer (301). The conductor (309) extends generally orthogonal to the RF transmission layer (301). The assembly comprises an open coaxial structure (313) located adjacent to an edge of the RF transmission layer (301). The open coaxial structure (313) comprises a cavity (315) extending therethrough for receiving the conductor (309). The cavity (315) comprises an opening facing the edge of the RF transmission layer (301) so as to direct electromagnetic radiation towards the RF transmission layer (301).

Abstract: There is described an optoelectronic device having a housing and a chip housed by the housing. At least a portion of the chip protrudes through an aperture in a wall of the housing. There is further provided an optoelectronic module comprising such an optoelectronic device and electronic control circuitry adapted to control the operation of the optoelectronic device.

Abstract: A package design for electro-optic devices has been developed in which the substrate supporting the electro-optic element serves also as the base of the device housing. The electro-optic element is flip-chip bonded to the substrate. In a preferred embodiment the substrate is a multi-level wiring board.

Abstract: A package design for electro-optic devices has been developed in which the substrate supporting the electro-optic element serves also as the base of the device housing. The electro-optic element is flip-chip bonded to the substrate. In a preferred embodiment the substrate is a multi-level wiring board.

Abstract: A package design for electro-optic devices has been developed in which the substrate supporting the electro-optic element serves also as the base of the device housing. The electro-optic element is flip-chip bonded to the substrate. In a preferred embodiment the substrate is a multi-level wiring board.

Abstract: A package design for electro-optic devices has been developed in which the substrate supporting the electro-optic element serves also as the base of the device housing. The electro-optic element is flip-chip bonded to the substrate. In a preferred embodiment the substrate is a multi-level wiring board.

Abstract: The present invention generally relates to an air cavity plastic package for a high frequency optical device. In one aspect, a module package for a high frequency optoelectronic device is provided. The module package includes an upper plastic housing having an upper cavity formed therein and a lower plastic housing having a lower cavity formed therein. The upper housing and the lower housing are configured to mate together such that the cavities form an enclosed air cavity between the housings. Additionally, upon creating a seal between the housings, an optical feed through is realized. The module package further includes a plurality of conductors disposed in the lower housing, each conductor having an upper end and a lower end, wherein the upper end is connectable to a chip disposed in the air cavity and the lower end is connectable to a board. In another aspect, a method of packaging and assembling a high frequency optical device is provided.

Abstract: The present invention generally relates to an air cavity plastic package for a high frequency optical device. In one aspect, a module package for a high frequency optoelectronic device is provided. The module package includes an upper plastic housing having an upper cavity formed therein and a lower plastic housing having a lower cavity formed therein. The upper housing and the lower housing are configured to mate together such that the cavities form an enclosed air cavity between the housings. Additionally, upon creating a seal between the housings, an optical feed through is realized. The module package further includes a plurality of conductors disposed in the lower housing, each conductor having an upper end and a lower end, wherein the upper end is connectable to a chip disposed in the air cavity and the lower end is connectable to a board. In another aspect, a method of packaging and assembling a high frequency optical device is provided.

Abstract: An electro-optical modulator is disclosed that has a microwave input, chip with a thin film resistor or a lumped resistor located between an input RF connector and an RF electrode on a Lithium Niobate chip. The accessory connection chip has a broadband attenuator like a thin film resistor which is placed in a microstrip line for effecting the electrical transmission to Lithium Niobate chip. The insertion of the thin film resistor before the RF electrode lowers the electrical return loss value as a function of frequency, allowing a lower driving voltage design or a reduced chip length without degrading the performances.

Abstract: An electro-optical modulator is disclosed that has a microwave input, chip with a thin film resistor or a lumped resistor located between an input RF connector and an RF electrode on a Lithium Niobate chip. The accessory connection chip has a broadband attenuator like a thin film resistor which is placed in a microstrip line for effecting the electrical transmission to Lithium Niobate chip. The insertion of the thin film resistor before the RF electrode lowers the electrical return loss value as a function of frequency, allowing a lower driving voltage design or a reduced chip length without degrading the performances.