Patents by Inventor Mario Brands
Mario Brands has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10392531Abstract: A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, —an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.Type: GrantFiled: November 25, 2010Date of Patent: August 27, 2019Assignee: BASF SEInventors: Vijay Immanuel Raman, Sophia Ebert, Mario Brands, Yongqing Lan, Philipp Zacharias, Ilshat Gubaydullin, Yuzhuo Li
-
Patent number: 9028708Abstract: An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.Type: GrantFiled: November 25, 2010Date of Patent: May 12, 2015Assignee: BASF SEInventors: Vijay Immanuel Raman, Yuzhuo Li, Mario Brands, Yongqing Lan, Kenneth Rushing, Karpagavalli Ramji
-
Patent number: 9005472Abstract: An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one kind of functional groups (a1) capable of interacting with the metals and/or the metal oxides on top of the surfaces to be polished and forming complexes with the said metals and metal cations, the said polymer particles (A) being preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomer or polymer containing a plurality of functional groups (a1); graft copolymers preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomeric or polymeric aminotriazine-polyamine condensate; and a process for the chemical and mechanical polishing of patterned and unstructured metal surfaces makingType: GrantFiled: January 19, 2011Date of Patent: April 14, 2015Assignee: BASF SEInventors: Vijay Immanuel Raman, Ilshat Gubaydullin, Mario Brands, Yuzhuo Li, Maxim Peretolchin
-
Patent number: 8927429Abstract: A chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid Abstract A chemical-mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid of the formula HaXbPsMOyVzOc wherein X=any cation other than H 8<y<18 8<z<14 56<c<105 a+b=2c?6y?5(3+z) b>0 and a>0 (formula I) or a salt thereof, and, (C) an aqueous medium.Type: GrantFiled: October 4, 2011Date of Patent: January 6, 2015Assignee: BASF SEInventors: Christine Schmitt, Andrey Karpov, Frank Rosowski, Mario Brands, Yuzhuo Li
-
Patent number: 8747687Abstract: An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-soluble complexes with the metal and causing an increase of the material removal rate MRR and the static etch rate SER with increasing concentration of the compound (B); and (C) a dissolved organic non-polymeric compound interacting and forming slightly soluble or insoluble complexes with the metal, which complexes are capable of being adsorbed by the metal surfaces, and causing a lower increase of the MRR than the compound (B) and a lower increase of the SER than the compound (B) or no increase of the SER with increasing concentration of the compound (C); a CMP process comprising selecting the components (A) to (C) and the use of the CMP agent and process for polishing wafers with ICs.Type: GrantFiled: April 19, 2010Date of Patent: June 10, 2014Assignee: BASF SEInventors: Vijay Immanuel Raman, Ilshat Gubaydullin, Yuzhuo Li, Mario Brands, Yongqing Lan
-
Patent number: 8679980Abstract: (A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant functional groups (a2) capable of interacting less strongly with the metal of the surfaces to be polished than the functional groups (a1); and (B) an organic non-polymeric compound dissolved in the aqueous phase and capable of interacting and forming strong, water-soluble complexes with the metal of the surfaces to be polished and causing an increase of the material removal rate MRR and the static etch rate SER of the metal surfaces to be polished with increasing concentration of the compound (B); a CMP process comprising selecting (A) and (B) and the use of the CMP agent and process for polishing wafers with ICs.Type: GrantFiled: April 19, 2010Date of Patent: March 25, 2014Assignee: BASF SEInventors: Vijay Immanuel Raman, Ilshat Gubaydullin, Yuzhuo Li, Mario Brands, Yongqing Lan
-
Publication number: 20130189842Abstract: A chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid Abstract A chemical-mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid of the formula HaXbPsMOyVzOc wherein X=any cation other than H 8<y<18 8<z<14 56<c<105 a+b=2c?6y?5(3+z) b>0 and a>0 (formula I) or a salt thereof, and, (C) an aqueous medium.Type: ApplicationFiled: October 4, 2011Publication date: July 25, 2013Applicant: BASF SEInventors: Christine Schmitt, Andrey Karpov, Frank Rosowski, Mario Brands, Yuzhuo Li
-
Publication number: 20120322264Abstract: An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one kind of functional groups (al) capable of interacting with the metals and/or the metal oxides on top of the surfaces to be polished and forming complexes with the said metals and metal cations, the said polymer particles (A) being preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomer or polymer containing a plurality of functional groups (a1); graft copolymers preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomeric or polymeric aminotriazine-polyamine condensate; and a process for the chemical and mechanical polishing of patterned and unstructured metal surfaces makingType: ApplicationFiled: January 19, 2011Publication date: December 20, 2012Applicant: BASF SEInventors: Vijay Immanuel Raman, Ilshat Gubaydullin, Mario Brands, Yuzhuo Li, Maxim Peretolchin
-
Patent number: 8288512Abstract: The invention relates to the use of amphiphilic self-assembling proteins for formulating poorly water-soluble effect substances.Type: GrantFiled: January 19, 2007Date of Patent: October 16, 2012Assignee: BASF SEInventors: Burghard Liebmann, Marcus Fehr, Daniel Hümmerich, Ingrid Martin, Mario Brands, Arne Ptock, Thomas Scheibel
-
Publication number: 20120235081Abstract: A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start,—an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.Type: ApplicationFiled: November 25, 2010Publication date: September 20, 2012Applicant: BASF SEInventors: Vijay Immanuel Raman, Sophia Ebert, Mario Brands, Yongqing Lan, Philipp Zacharias, Ilshat Gubaydullin, Yuzhuo Li
-
Publication number: 20120231627Abstract: An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.Type: ApplicationFiled: November 25, 2010Publication date: September 13, 2012Applicant: BASF SEInventors: Vijay Immanuel Raman, Yuzhuo Li, Mario Brands, Yongqing Lan, Kenneth Rushing, Karpagavalli Ramji
-
Publication number: 20120083188Abstract: Aqueous dispersion comprising cerium oxide and silicon dioxide, obtainable by first mixing a cerium oxide starting dispersion and a silicon dioxide starting dispersion while stirring, and then dispersing at a shear rate of 10000 to 30000 s?1, wherein a) the cerium oxide starting dispersion—contains 0.5 to 30% by weight of cerium oxide particles as the solid phase, —a d5o of the particle size distribution of 10 to 100 nm—and has a pH of 1 to 7, and b) the silicon dioxide starting dispersion—contains 0.1 to 30% by weight of colloidal silicon dioxide particles as the solid phase, has a d5o of the particle size distribution of 3 to 50 nm and has a pH of 6 to 11.5, d) with the proviso that the d5o of the particle size distribution of the cerium oxide particles is greater than that of the silicon dioxide particles, the cerium oxide/silicon dioxide weight ratio is >1 and the amount of cerium oxide starting dispersion is such that the zeta potential of the dispersion is negative.Type: ApplicationFiled: May 18, 2010Publication date: April 5, 2012Applicants: BASF SE, EVONIK DEGUSSA GMBHInventors: Michael Kroell, Wolfgang Lortz, Stefan Heberer, Mario Brands, Yuzhuo Li, Bettina Drescher, Diana Franz
-
Publication number: 20120058641Abstract: An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-soluble complexes with the metal and causing an increase of the material removal rate MRR and the static etch rate SER with increasing concentration of the compound (B); and (C) a dissolved organic non-polymeric compound interacting and forming slightly soluble or insoluble complexes with the metal, which complexes are capable of being adsorbed by the metal surfaces, and causing a lower increase of the MRR than the compound (B) and a lower increase of the SER than the compound (B) or no increase of the SER with increasing concentration of the compound (C); a CMP process comprising selecting the components (A) to (C) and the use of the CMP agent and process for polishing wafers with ICs.Type: ApplicationFiled: April 19, 2010Publication date: March 8, 2012Applicant: BASF SEInventors: Vijay Immanuel Raman, Ilshat Gubaydullin, Yuzhuo Li, Mario Brands, Yongqing Lan
-
Publication number: 20120058643Abstract: (A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant functional groups (a2) capable of interacting less strongly with the metal of the surfaces to be polished than the functional groups (a1); and (B) an organic non-polymeric compound dissolved in the aqueous phase and capable of interacting and forming strong, water-soluble complexes with the metal of the surfaces to be polished and causing an increase of the material removal rate MRR and the static etch rate SER of the metal surfaces to be polished with increasing concentration of the compound (B); a CMP process comprising selecting (A) and (B) and the use of the CMP agent and process for polishing wafers with ICs.Type: ApplicationFiled: April 19, 2010Publication date: March 8, 2012Applicant: BASF SEInventors: Vijay Immanuel Raman, Ilshat Gubaydullin, Yuzhuo Li, Mario Brands, Yongqing Lan
-
Publication number: 20100278883Abstract: The invention relates to the use of amphiphilic self-assembling proteins for formulating poorly water-soluble effect substances.Type: ApplicationFiled: January 19, 2007Publication date: November 4, 2010Applicant: BASF SEInventors: Burghard Liebmann, Marcus Fehr, Daniel Hümmerich, Ingrid Martin, Mario Brands, Arne Ptock, Thomas Scheibel
-
Publication number: 20100122379Abstract: The present invention relates to novel active substance compositions for plant protection in the form of finely divided active-substance-containing particles which compositions comprise a) at least one plant protectant; b) at least one polymer P which is not soluble in water and which is degradable by enzymatic hydrolysis, in an amount of at least 20% by weight based on the total amount of the components of the active-substance-comprising particles, and c) at least one hydrolase (EC 3), where at least 90% by weight of the active substance-containing particles of the active substance composition do not exceed a diameter of 500 ?m (D90-value) and where components a), b) and c) account for at least 30% by weight of the active substance particles. The invention also relates to a process for their preparation, and to the use of the active substance compositions for the treatment of plants, soils and of seed.Type: ApplicationFiled: April 25, 2008Publication date: May 13, 2010Applicant: BASF SEInventors: Yvonne Dieckmann, Mario Brands, Rafel Israels, Thomas Friedrich, Gabi Winter, Motonori Yamamoto, Peter Dombo, Ursula Huber-Moulliet, Silvia Sztoj