Abstract: A layout is decomposed into partial patterns. An intermediate mask is drawn for each of the partial patterns. The intermediate masks are used in a mask stepper or scanner progressively for projection again into a common pattern on a test mask. A line width distribution LB(x,y) is determined from the test mask or from a test wafer exposed using the mask, and is converted into a distribution of dose corrections. The transmission T(x,y) of the respective intermediate masks is adapted based upon the calculated dose correction. This can be achieved using additional optical elements which are assigned to the intermediate masks and have shading structure elements, or by laser-induced rear-side introduction of shading elements in the quartz substrate of the intermediate masks themselves.

Abstract: A photosensitive layer stack, lithographic systems and methods of patterning a substrate are disclosed having a patterning layer and a photochromic layer with an absorption switching from transmissive to absorptive upon exposure.

Abstract: A method for reducing an overlay error of structures of a layer to be patterned relative to those of a reference layer includes formation of standard measurement marks assigned to one another in the two layers for determining an overlay error and for setting up further measurement marks for determining an additional optical imaging error of the projection system at least in the current layer. The further measurement marks have a geometry adapted to the geometry of selected structures of the circuit patterns to be transferred by projection from masks onto semiconductor substrates. An imaging error affects circuit structures and further measurement marks in the same way. An alignment correction for a subsequent exposure can be calculated from the measured positional deviations between the two standard measurement marks and between the standard measurement mark and the further measurement mark of the layer currently to be patterned.

Abstract: Photolithography using polarized light is disclosed. For example, a method includes transmitting the light through a mask having a first area with a first class of patterns and a second area with a second class of patterns thereby generating a virtual image. The virtual image is exposed into a resist layer. The polarization of the light passing the first area is modified while the light passing the mask.

Abstract: A set of at least two masks for the projection of structure patterns coordinated with one another by a projection system into the same photosensitive layer of a semiconductor wafer, in which the set of at least two masks includes a primary mask having an opaque structure element, which is formed at a first position on the first mask. A second mask of the set, for example a trimming mask, which is assigned to the first mask, can have a semitransparent region assigned to the structure element of the first mask. The semitransparent region can be formed at the same position on the second mask as the opaque structure element on the first mask. With the aid of the suitable choice of the transparency of the semitransparent region, it is possible to enable an undesirable resist region to be trimmed away for enlargement of a process window during exposure of the photosensitive layer on the semiconductor wafer.

Abstract: A set of at least two masks, coordinated with one another, for the projection of structure patterns, into the same photosensitive layer arranged on a semiconductor wafer. The first mask includes a semitransparent or nontransparent first layer, which is arranged on a first substrate and in which at least one first opening is formed at a first position, the first opening having a first lateral dimension, which is greater than the resolution limit of a projection system for the projection of the structure patterns. The second mask includes a semitransparent or nontransparent second layer, which is arranged on a second substrate and in which at least one dummy structure assigned to the first opening is formed at a second position, the dummy structure having a second lateral dimension, which is smaller than the resolution limit of the projection system wherein the first position on the first mask corresponds to the second position on the second mask.

Abstract: An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

Abstract: Methods of forming transistor arrangements using alternating phase shift masks are provided. The mask may include two parallel opaque lines, a first transparent section separating the opaque lines and a second transparent section in the rest. The second transparent section may shift the phase with respect to the first transparent section by 180 degree. A phase conflict occurs along an edge between the first and the second transparent sections. A semiconductor substrate is patterned via the mask and, from the opaque lines functional active areas of a transistor pair and from the phase conflict edge, thereby resulting in a parasitic area. A separation gate is provided that is capable of switching off a parasitic transistor being formed within the parasitic area. Channel widths may be stabilized and maximized within dense transistor arrangements, for example, in a multiplexer portion of a sense amplifier arrangement for memory cell arrays.

Abstract: A mask arrangement or an optical projection system includes a diffractive optical element. The diffractive optical element includes grid sections having gratings with defined grating parameters and absorbing elements with defined absorption properties, wherein each grid section corresponds to a respective mask section with mask pattern elements. The diffractive optical element may correct dimension deviations of resist pattern elements obtained from the respective mask pattern elements, wherein the deviations are caused by dimension deviations of the mask pattern elements or by local deviations and defects of the projection system.

Abstract: A layout is decomposed into partial patterns. An intermediate mask is drawn for each of the partial patterns. The intermediate masks are used in a mask stepper or scanner progressively for projection again into a common pattern on a test mask. A line width distribution LB(x,y) is determined from the test mask or from a test wafer exposed using the mask, and is converted into a distribution of dose corrections. The transmission T(x,y) of the respective intermediate masks is adapted based upon the calculated dose correction. This can be achieved using additional optical elements which are assigned to the intermediate masks and have shading structure elements, or by laser-induced rear-side introduction of shading elements in the quartz substrate of the intermediate masks themselves.

Abstract: A transparent optical element in a region between a photo mask and a light source of a photolithographic apparatus is provided having a plurality of attenuating elements being arranged in accordance with a first intensity correction function. The first intensity correction function is calculated from variations of characteristic feature size of structural elements of a resist pattern as compared to the nominal values of structural elements of a layout pattern. The variations of the characteristic feature size are divided into a first contribution being associated with the photolithographic apparatus and into a second contribution being associated with the photo mask.

Abstract: An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

Abstract: An imaging system having a dipole diaphragm (2) having two diaphragm openings (2b) arranged one behind the other in a dipole axis (y), and a mask having mask structures (20, 23) is used for producing semiconductor structures (10?, 13?) on a wafer (15?) by imaging the mask (25) onto the wafer (15?). The dipole diaphragm (2) is provided for the imaging of the mask (25), and the mask (25), for producing main semiconductor structures (10; 10?) on the wafer (15?), has main mask structures (20) parallel to an imaging axis (x) running perpendicular to the dipole axis (y). At least one connecting mask structure (23?) oriented obliquely with respect to the dipole axis (y) at least in sections is formed on the mask (25), which structure connects at least two main mask structures (20) to one another.

Abstract: A method is used to produce semiconductor patterns (10?, 13?) on a wafer (15?). For this purpose, a mask (25) and a dipole aperture (2) with two aperture openings (2b) arranged behind one another in a dipole axis (y) are used. The mask (25) is imaged on the wafer (15?) by means of the dipole aperture (2) and, by the imaging of the mask (25) on the wafer (15?), main semiconductor patterns (10?) are produced which are aligned perpendicularly to the dipole axis (y) and in parallel with an imaging axis (x). A second mask (35) with at least one connecting mask pattern (33) is imaged on the wafer (15?) by means of a second aperture (6), as a result of which a connecting semiconductor pattern (13) is produced on the wafer (15?), by means of which at least two of the main semiconductor patterns (10?) are connected to one another.

Abstract: A mask, and in particular a phase shift product mask, utilizes predetermined defects being produced during the fabrication thereof in the so-called “second layer” process. The defects are identified by markers in their direct vicinity. The markers are quadrangular and indicate, by virtue of their number in combination with their configuration, information about the respectively assigned defect, such as, for example, defect type, defect size, etc.

Abstract: A mask level layout has an arrangement of lines and spaces with the spaces interconnected by a further space. The spaces are alternately acted upon with a phase deviation with respect to the spaces, where a phase edge between spaces acted upon differently arises in the region of the further space. Alternatively, the connecting space within the layout may be filled with dark regions. An additional space is inserted in a second layout representing a further mask of the same mask set. The additional space enables formation of an insulating region on a semiconductor substrate at the location where formation of a continuous isolation trench is not possible due to the phase edges or dark regions within originally connecting spaces of the first mask. The first mask can be embodied as a hybrid mask with structures according to the principle of alternating phase masks with a large process window.

Abstract: A method for reducing an overlay error of structures of a layer to be patterned relative to those of a reference layer includes formation of standard measurement marks assigned to one another in the two layers for determining an overlay error and for setting up further measurement marks for determining an additional optical imaging error of the projection system at least in the current layer. The further measurement marks have a geometry adapted to the geometry of selected structures of the circuit patterns to be transferred by projection from masks onto semiconductor substrates. An imaging error affects circuit structures and further measurement marks in the same way. An alignment correction for a subsequent exposure can be calculated from the measured positional deviations between the two standard measurement marks and between the standard measurement mark and the further measurement mark of the layer currently to be patterned.

Abstract: Auxiliary openings are assigned to openings on a mask to be transferred to a wafer. These auxiliary openings have a phase-shifting property, preferably between 160° and 200° with respect to the openings, and a cross section lying below the limiting dimension for the printing of the projection apparatus, so that the auxiliary openings themselves are not printed onto the wafer. However, the auxiliary openings do enhance the contrast of the aerial image, in particular of an associated, isolated or semi-isolated opening on the wafer. The auxiliary openings may have a distance from the opening that lies above the resolution limit of the projection apparatus but that is less than the coherence length of the light used for the projection. A phase-related utilization of the optical proximity effect results, which can produce elliptical structures from square openings on the mask when the auxiliary openings are disposed in the preferential direction.

Abstract: A set of at least two masks for the projection of structure patterns, coordinated with one another, by a projection system into the same photosensitive layer of a semiconductor wafer can include a second mask.

Abstract: A set of at least two masks for the projection of structure patterns coordinated with one another by a projection system into the same photosensitive layer of a semiconductor wafer can include a primary mask having an opaque structure element, which is formed at a first position on the first mask. A second mask of the set, for example a trimming mask, which is assigned to the first mask, can have a semitransparent region assigned to the structure element of the first mask. The semitransparent region can be formed at the same position on the second mask as the opaque structure element on the first mask. With the aid of the suitable choice of the transparency of the semitransparent region, it is possible to enable an undesirable resist region to be trimmed away with an enlargement of the process window during the exposure of the semiconductor wafer.