Abstract: A probe (10) that can be used for forming a low resistance electrical connection to a semiconductor die includes a contact (18) that is created on a compliant layer (12) which is supported by a substrate (11). Pressure applied to the contact (18) compresses the compliant layer (11) which causes a distal end of the contact (18) to move in a motion that is substantially equal to an arc. As the contact (18) moves through the arc motion, it scrubs across a bonding pad of a semiconductor die and breaks through oxide that typically forms on the bonding pad thereby forming a low resistance electrical connection to the bonding pad.

Abstract: A method for improving the bonding characteristics of TAB semiconductor packages to circuit boards is achieved by plating additional amounts of tin on the TAB semiconductor package leads after final package assembly is complete. Residues from the plating step are removed from the package assembly to prevent contamination. Stresses that were developed in the plated material during the plating step are removed by heating the leads.

Abstract: A method of burning in integrated circuits on a semiconductor wafer is provided, wherein a burn-in chamber having a flexible membrane probe which is sized so that it can couple to a plurality of contact pads on the semiconductor wafer at one time. The semiconductor wafer is heated to a predetermined burn-in temperature and a bladder which lies behind the membrane probe is inflated so that the membrane probe couples to each of the plurality of contact pads on the wafer. The membrane probe is coupled to an exercise circuit which exercises all of the integrated circuits on the wafer in parallel for a predetermined time.

Abstract: A module is described for use in data devices such as smart cards. The module consists of a contact carrier having contacts, an integrated circuit, and a base enclosing the integrated circuit. The base is formed to provide a groove around the perimeter such that when the device is formed, material from an intermediate layer will flow into the groove and secure the module to the card.