Abstract: An apparatus and method are disclosed for providing drain bias for non-volatile memory. According to one embodiment, the drain bias is provided utilizing a drain bias circuit that is referenced by a static voltage reference.

Abstract: According to the invention, an apparatus and method are disclosed for sensing the contents of non-volatile memory. According to one embodiment, a set of local sensing circuits is used to read the logical values stored in memory cells contained within a partition of a non-volatile memory device.

Abstract: An apparatus and method are disclosed for providing a sample and hold voltage reference for non-volatile memory. According to one embodiment, the sample and hold voltage reference produces a reference voltage for a drain bias circuit of a memory cell.

Abstract: A method of programming a flash memory cell. The method occurs in a memory device having a decoder that receives a select signal. The decoder is coupled to a first word line and a second word line. The first word line is coupled to a first memory cell and the second word line is coupled to a second memory cell. The select signal is asserted to a first voltage such that the decoder selects the first word line and the first memory cell and deselects the second word line and the second memory cell. The select signal is then asserted to a second voltage such that the decoder couples a programming voltage to the first word line and floats the second word line. The first memory cell is then programmed while the second word line is floating.

Abstract: A programming verify circuit for controlling the memory cells to which programming voltages are applied, the circuit including a comparator for testing the state of each cell being programmed with the state to which the cell is being programmed, and a program load circuit which responds to the result of the test by the comparator to hold a condition for each memory cell being programmed to indicate whether the memory cell should be further programmed, each program load circuit including circuitry for precluding the holding of a condition indicating further programming is necessary once the associated memory cell has been initially verified as programmed by the comparator.

Abstract: A method of utilizing circuitry including error detecting and correcting circuitry to detect and correct errors which can occur in data stored in multi-bit per cell format in a flash EEPROM memory array before those errors can affect the accuracy of data provided by a flash EEPROM memory array.

Abstract: A memory array having memory devices arranged in rows and columns, each column including a load device across which a first voltage level is provided when a memory device being read is in one condition and a second voltage level is provided when a memory device being read is in a second condition, a reference device arranged in series with another load device, a sensing device for detecting the voltages across the load devices and providing a first output signal when the voltage across the first load device is greater than the voltage across the second voltage device and a second output when the voltage across the first load device is less than the voltage across the second voltage device.

Abstract: An EPROM includes an on chip circuitry for selecting an alternative chapter mode addressing scheme. By utilizing the chapter addressing mode, a plurality of devices can be coupled in parallel, wherein each device is treated as a chapter of the total memory capacity. Hard latches are used to store a designated code and soft latches are used to latch in chapter addresses from data lines. A chapter is evaluated if values stored in the hard latch match the values inputted to the soft latch.

Abstract: A redundancy programming circuit employing a two EPROM cell CAM for storing programmed states of redundant elements. The CAMs are disposed aside a memory array and word lines of the array are extended to the CAMs for programming the CAMs. Two word lines are coupled to each EPROM cell so that programming can still be achieved in the event one of the lines is defective.