Abstract: An electronic device includes a first-conductivity-type substrate and a second-conductivity-type epitaxial layer having a first dopant concentration. A first substrate region includes a second-conductivity-type buried layer and is enclosed by a first deep isolation structure. Within the first substrate region are a first doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration and a second doped region having the first conductivity type. A second substrate region includes a first-conductivity-type buried layer and is enclosed by a second deep isolation structure. Within the second substrate region is a third doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration.

Abstract: A bidirectional flat clamp device includes a first device node and a second device node. The bidirectional flat clamp device also includes a first switch and a second switch coupled in series between the first and second device nodes. The bidirectional flat clamp device also includes at least one switch driver coupled to the first and second switches. The bidirectional flat clamp device also includes a first current path between the first and second device nodes, the first current path having a first diode, a voltage sensor circuit, and a second diode. The bidirectional flat clamp device also includes a second current path between the first and second device nodes, the second current path having a third diode, the voltage sensor circuit, and a fourth diode.

Abstract: A surge protection device for providing bidirectional detections of one or more surge events. The device has low dynamic resistance during a surge protection mode, and it conducts ultra-low leakage current outside of the surge protection mode. In one implementation, the device includes first and second power transistors, a sensing circuit, and a driver circuit. The first power transistor includes a first source terminal that is coupled to the substrate, and the second power transistor includes a second source terminal that is coupled to the substrate. The sensing circuit is configured to detect a voltage of the first pin relative to the second pin and generate a sense signal when the voltage exceeds a threshold. The driver circuit is configured to generate a driver signal based on the sense signal and output the driver signal to at least one of the first or second gate terminal.

Abstract: An electronic device includes a first-conductivity-type substrate and a second-conductivity-type epitaxial layer having a first dopant concentration. A first substrate region includes a second-conductivity-type buried layer and is enclosed by a first deep isolation structure. Within the first substrate region are a first doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration and a second doped region having the first conductivity type. A second substrate region includes a first-conductivity-type buried layer and is enclosed by a second deep isolation structure. Within the second substrate region is a third doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration.

Abstract: A bidirectional flat clamp device includes a first device node and a second device node. The bidirectional flat clamp device also includes a first switch and a second switch coupled in series between the first and second device nodes. The bidirectional flat clamp device also includes at least one switch driver coupled to the first and second switches. The bidirectional flat clamp device also includes a first current path between the first and second device nodes, the first current path having a first diode, a voltage sensor circuit, and a second diode. The bidirectional flat clamp device also includes a second current path between the first and second device nodes, the second current path having a third diode, the voltage sensor circuit, and a fourth diode.

Abstract: A surge protection device for providing bidirectional detections of one or more surge events. The device has low dynamic resistance during a surge protection mode, and it conducts ultra-low leakage current outside of the surge protection mode. In one implementation, the device includes first and second power transistors, a sensing circuit, and a driver circuit. The first power transistor includes a first source terminal that is coupled to the substrate, and the second power transistor includes a second source terminal that is coupled to the substrate. The sensing circuit is configured to detect a voltage of the first pin relative to the second pin and generate a sense signal when the voltage exceeds a threshold. The driver circuit is configured to generate a driver signal based on the sense signal and output the driver signal to at least one of the first or second gate terminal.

Abstract: In a method and system for translating voltage levels to interface electronic devices, a voltage translator is operable to perform the translation of voltage levels of the bi-directional signals exchanged between the electronic devices in accordance with an open-drain mode of operation and in accordance with a push-pull mode of operation. The voltage translator includes edge-rate accelerators to detect signal transitions and includes configurable resistors to provide a direct current (DC) drive current and a DC bias to hold desired voltage levels. The voltage translator is operable in the open-drain mode to detect a presence of an electronic device, and is operable in the push-pull mode upon the detection of the electronic device.

Abstract: In a method and apparatus for rapidly recovering an improved amplifier from an overload condition, a cascode amplifier (CASA) having a pair of inputs and an output is coupled to an overload recovery circuit (ORC). The pair of inputs is coupled to receive a differential input signal. A deviation in the differential input signal that is greater than a threshold causes a deviation in a current provided to at least one transistor included in the CASA. The deviation in the current causes the CASA to operate in an overload condition (OC). The ORC includes a makeup current circuit operable to generate an overload current in response to the OC and a controller operable to control a voltage at the output during the OC. The controller coupled to the makeup current circuit provides the overload current to the CASA to enable the rapid recovery from the OC.

Abstract: In a method and apparatus for rapidly recovering an improved amplifier from an overload condition, a cascode amplifier (CASA) having a pair of inputs and an output is coupled to an overload recovery circuit (ORC). The pair of inputs is coupled to receive a differential input signal. A deviation in the differential input signal that is greater than a threshold causes a deviation in a current provided to at least one transistor included in the CASA. The deviation in the current causes the CASA to operate in an overload condition (OC). The ORC includes a makeup current circuit operable to generate an overload current in response to the OC and a controller operable to control a voltage at the output during the OC. The controller coupled to the makeup current circuit provides the overload current to the CASA to enable the rapid recovery from the OC.

Abstract: In a method and system for translating voltage levels to interface electronic devices, a voltage translator is operable to perform the translation of voltage levels of the bidirectional signals exchanged between the electronic devices in accordance with an open-drain mode of operation and in accordance with a push-pull mode of operation. The voltage translator includes edge-rate accelerators to detect signal transitions and includes configurable resistors to provide a direct current (DC) drive current and a DC bias to hold desired voltage levels. The voltage translator is operable in the open-drain mode to detect a presence of an electronic device, and is operable in the push-pull mode upon the detection of the electronic device.