Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.

Abstract: A method for removing a residue from a surface is disclosed herein. In one aspect, the method includes: providing a chamber containing the surface coated with the residue; providing in the chamber a cleaning composition of an oxidizing gas and optionally an organic species; and irradiating the cleaning composition with ultraviolet light to remove the residue from the surface. The surface can be, for example, a window of a processing chamber. In certain aspects, a reflective surface can be located within close proximity to the window to enhance cleaning efficiency.

Abstract: The present invention is a process for cleaning equipment surfaces in a semiconductor material processing chamber after deposition of a porous film containing a porogen, comprising; contacting the equipment surfaces with a proton donor containing atmosphere to react with the porogen deposited on the equipment surfaces; contacting the equipment surfaces with a fluorine donor containing atmosphere to react with the film deposited on the equipment surfaces.