Abstract: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

Abstract: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

Abstract: One embodiment relates to a method of electron beam imaging of a target area of a substrate. During an imaging phase, an electron beam is controllably scanned over the target area of the substrate, and extracted secondary electrons are detected. An electric field at a surface of the substrate is changed from an original electric field after the imaging phase. During a charge control phase, the electron beam is controllably scanned over the target area of the substrate. The electric field at the surface of the substrate is reverted back to the original electric field after the charge control phase. The imaging and charge control frames are interleaved. Other embodiments and features are also disclosed.

Abstract: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

Abstract: Methods and systems for creating a recipe for a defect review process are provided. One method includes determining an identity of a specimen on which the defect review process will be performed. The method also includes identifying inspection results for the specimen based on the identity. In addition, the method includes creating the recipe for the defect review process based on the inspection results. One system includes a sensor configured to generate output responsive to an identity of a specimen on which the defect review process will be performed. The system also includes a processor configured to determine the identity of the specimen using the output, to identify inspection results for the specimen based on the identity, and to create the recipe for the defect review process based on the inspection results.

Abstract: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

Abstract: Various systems configured to reduce distortion of a resist during a metrology process are provided. The systems include an electron beam metrology tool configured to measure one or more characteristics of one or more resist features formed on a specimen. The electron beam metrology tool may be configured as a scanning electron microscope. The resist may be designed for exposure at a wavelength of about 193 nm. One system includes a cooling subsystem configured to alter a temperature of the specimen during measurements by the tool such that the resist feature(s) are not substantially distorted during the measurements. Another system includes a drying subsystem that is configured to reduce moisture proximate the specimen during measurements by the electron beam metrology tool such that the resist feature(s) are not substantially distorted during the measurements. An additional system may include both the cooling subsystem and the drying subsystem.

Abstract: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.