Abstract: A method and apparatus in a noise cancellation system that receives a noise reference signal via a noise reference signal input port, and performs at least one of procedures a and b set forth below for reducing noise in a DSL data signal transmitted on a DSL transmission line to which the noise cancellation system is coupled: a.i.) creating a noise free representation of a DSL synchronization symbol repeatedly occurring in the transmitted DSL data signal, and a.ii.) reducing the noise in the transmitted DSL data signal based on the noise free representation of the DSL synchronization symbol and the received noise reference signal, and b.i.) analyzing at least one of the received noise reference signal and the transmitted DSL data signal to identify one or more frequency bands in which to de-emphasize noise cancellation in the transmitted DSL data signal, and b.ii.

Abstract: In a framework wherein resources of a content provider may be delivered to clients from different domains, a method distributes the requests based on content-provider policies. In some cases, the domains include at least two distinct content delivery network (CDN) domains. The domains may include a content provider domain. Responsive to a request, either the content provider domain or one of the two CDN domains is selected, the selection being based at least in part on one or more policies set by the content provider.

Abstract: A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

Abstract: In a framework wherein resources of a content provider may be delivered to clients from different domains, a method distributes the requests based on content-provider policies. In some cases, the domains include at least two distinct content delivery network (CDN) domains. The domains may include a content provider domain. Responsive to a request, either the content provider domain or one of the two CDN domains is selected, the selection being based at least in part on one or more policies set by the content provider.

Abstract: A framework for delivery of Internet content includes a subscriber server network; and at least one domain name server constructed and adapted to provide policy-based domain name service, wherein, in response to a request to resolve a hostname, the domain name server resolves the hostname to at least one address corresponding a server in the subscriber server network based on at least one policy consideration. The framework may include a content delivery network, distinct from the subscriber server network, wherein, in response to a request to resolve a hostname, the domain name server provides at least one addresses of a server in the content delivery network based at least on the location of the requestor and other policy considerations. An address returned by the domain name server is selected based on one or more of: (a) geographic policies; (b) load share policies; (c) overflow policies; and (d) network aware policies.

Abstract: A single polytype single crystal silicon carbide wafer is disclosed having a diameter greater than three inches and less than five inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm?2, and a combined concentration of shallow level dopants less than 5E16 cm?3.

Abstract: The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises reducing the number of macrosteps in a growing crystal by incorporating a high concentration of nitrogen atoms in the initial one (1) millimeter of crystal growth.

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm?2.

Abstract: Treating compositions containing mutual solvents suitable for forming and maintaining single-phase aqueous fluid treating compositions containing very high concentrations of acids and/or chelating agents are described. Methods of use of these treating compositions for dissolving and removing scale and formation matrix material in oil-field treatments such as stimulation and remediation are given.

Abstract: In a framework wherein resources of a content provider may be delivered to clients from different domains, a method distributes the requests based on content-provider policies. In some cases, the domains include at least two distinct content delivery network (CDN) domains. The domains may include a content provider domain. Responsive to a request, either the content provider domain or one of the two CDN domains is selected, the selection being based at least in part on one or more policies set by the content provider.

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm 2.

Abstract: A method, operable in a framework wherein resources of a content provider may be delivered to clients from at least two distinct content delivery networks (CDNs). Responsive to a client request, one of the CDNs is selected, the selection being based at least in part on one or more policies set by the content provider. The client is provided with information associated with the selected CDN. The information may be a domain name such as a CNAME for the selected CDN. The policies may include a load share policy that specifies a relative load share for each CDN, and the selecting may attempt to satisfy the load share policy.

Abstract: A method of treating a subterranean formation with a retarded self-diverting fluid system. The method includes contacting the formation with a mixture of acid, chelating agent, and betaine surfactant in which the betaine surfactant is mixed with an aqueous solution of the chelating agent in which the pH has been adjusted to a pH of below about 3.0, but above the pH at which the free acid of the chelating agent precipitates, and the resulting fluid system is utilized for both acid fracturing and matrix stimulation, as well as workover procedures such as scale and filter cake removal, especially in high temperature formations.

Abstract: The present invention relates to the inhibitors of MDM2 Binding Protein (MTBP) activity that may be used as medicaments. Such medicaments may be used to prevent or treat cancers. A preferred inhibitor is an siRNA molecule that is specific for silencing MTBP expression. The invention further relates to screening methods (e.g. for identifying MTBP inhibitors that may be used to treat cancers).

Abstract: A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a substantially right cylindrical single crystal of silicon carbide. A seed face defines an interface between the growth portion and the seed portion, with the seed face being substantially parallel to the bases of the right cylindrical crystal and being off-axis with respect to a basal plane of the single crystal. The growth portion replicates the polytype of the seed portion and the growth portion has a diameter of at least about 100 mm.

Abstract: A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density of less than about 2000 cm?2.

Abstract: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm?2.

Abstract: Propped fractures in formations from which fluids are produced are described that have wormholes extending out into the formations from the faces of the fractures at locations distant from boreholes. Methods are given for creating such propped fractures having wormholes in which either a closed propped fracture is formed and then the wormholes are formed, or the entire fracture and channel system is formed before the closure occurs.