Patents by Inventor Mark C. Tondra

Mark C. Tondra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6743639
    Abstract: A ferromagnetic thin-film based magnetic field detection system used for detecting the presence of selected molecular species. A magnetic field sensor supported on a substrate has a binding molecule layer positioned on a side thereof capable of selectively binding to the selected molecular species. The magnetic field sensor can be substantially covered by an electrical insulating layer having a recess therein adjacent to the sensor in which the binding molecule layer is provided. An electrical interconnection conductor can be supported on the substrate at least in part between the sensor and the substrate, and is electrically connected to the sensor. The magnetic field sensor can be provided in a bridge circuit, and can be formed by a number of interconnected individual sensors.
    Type: Grant
    Filed: October 13, 2000
    Date of Patent: June 1, 2004
    Assignee: NVE Corporation
    Inventors: Mark C. Tondra, John M. Anderson
  • Patent number: 6744086
    Abstract: A ferromagnetic thin-film based digital memory cell with a memory film of an anisotropic ferromagnetic material and with a source layer positioned on one side thereof so that a majority of conduction electrons passing therefrom have a selected spin orientation to be capable of reorienting the magnetization of the film. A disruption layer is positioned on the other side of the memory film so that conduction electrons spins passing therefrom are substantially random in orientation. The magnitude of currents needed to operate the cell can be reduced using coincident thermal pulses to raise the cell temperature.
    Type: Grant
    Filed: May 15, 2002
    Date of Patent: June 1, 2004
    Assignee: NVE Corporation
    Inventors: James M. Daughton, Arthur V. Pohm, Mark C. Tondra
  • Publication number: 20030007398
    Abstract: A ferromagnetic thin-film based digital memory cell with a memory film of an anisotropic ferromagnetic material and with a source layer positioned on one side thereof so that a majority of conduction electrons passing therefrom have a selected spin orientation to be capable of reorienting the magnetization of the film. A disruption layer is positioned on the other side of the memory film so that conduction electrons spins passing therefrom are substantially random in orientation. The magnitude of currents needed to operate the cell can be reduced using coincident thermal pulses to raise the cell temperature.
    Type: Application
    Filed: May 15, 2002
    Publication date: January 9, 2003
    Applicant: NVE Corporation
    Inventors: James M. Daughton, Arthur V. Pohm, Mark C. Tondra
  • Patent number: 6462541
    Abstract: A ferromagnetic thin-film based sensing arrangement having a plurality of magnetic field sensors on a substrate each having an intermediate layer of a nonmagnetic material with two major surfaces on opposite sides thereof with one of a pair of magnetically permeable films each of a magnetoresistive, anisotropic ferromagnetic material correspondingly positioned thereon with first and second oriented sensors therein respectively having a selected and a reversing magnetization orientation structure provided with one of said pair of permeable films thereof for orienting its magnetization in a selected direction absent an externally applied magnetic field in at least partly opposing directions.
    Type: Grant
    Filed: November 12, 1999
    Date of Patent: October 8, 2002
    Assignee: NVE Corporation
    Inventors: Dexin Wang, Mark C. Tondra, James M. Daughton
  • Publication number: 20020060565
    Abstract: A ferromagnetic thin-film based magnetic field detection system used for detecting the presence of selected molecular species. A magnetic field sensor supported on a substrate has a binding molecule layer positioned on a side thereof capable of selectively binding to the selected molecular species. The magnetic field sensor can be substantially covered by an electrical insulating layer having a recess therein adjacent to the sensor in which the binding molecule layer is provided. An electrical interconnection conductor can be supported on the substrate at least in part between the sensor and the substrate, and is electrically connected to the sensor. The magnetic field sensor can be provided in a bridge circuit, and can be formed by a number of interconnected individual sensors. A polymeric channel and reservoir structure base is provided for the system.
    Type: Application
    Filed: March 5, 2001
    Publication date: May 23, 2002
    Applicant: NVE Corporation
    Inventor: Mark C. Tondra
  • Patent number: 6072382
    Abstract: A magnetic field sensor having a junction structure in a sensor cell using a dielectric intermediate separating material with two major surfaces on one of which is a base anisotropic ferromagnetic thin-film which is also on a base electrode, and on the other of which there is at least one of a plurality of separate anisotropic ferromagnetic thin-film but of differing rotational responses to external magnetic fields. Similar structures have a separated film in each that can be interconnected to one another with the interconnections extending at least in part substantially parallel to the widths of the separated films, and the separated films can have lengths with gradually narrowing widths to the ends thereof as can the base electrode. One or more planar coils can be supported at least in part on the separated films.
    Type: Grant
    Filed: January 6, 1999
    Date of Patent: June 6, 2000
    Assignee: Nonvolatile Electronics, Incorporated
    Inventors: James M. Daughton, Mark C. Tondra, Arthur V. Pohm